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IRF620 N-Channel Power MOSFET: Datasheet pdf, 6A 200V MOSFET and Pinout

Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 6A TO-220 IRF620 is a 6A 200V N-Channel Power MOSFET N-Channel enhancement mode power field effect transistors

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Nov 16, 2021

Tracy Noah

Building the MOSFET SSR using IRF620s

 

Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 6A TO-220

IRF620 is a 6A 200V N-Channel Power MOSFET N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This article is going to introduce details about IRF620 MOSFET.

IRF620

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IRF620 Description

IRF620 is a 6A 200V N  -Channel Power MOSFET  N  -Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS  technology.

This device has been carefully designed to decrease on-state resistance, provide improved switching performance, and withstand high-energy pulses. These devices are ideal for high-efficiency switching   DC/DC convertersswitch-mode power supplies, and DC-AC converters for continuous power supply and motor control.

IRF620 Pinout

 

Pin No Pin Name
1 Gate
2 Drain
3 Source

IRF620 CAD Model

 IRF620 3D Model

Specifications

STMicroelectronics IRF620 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics IRF620.

IRF620 Tech Specifications

STMicroelectronics IRF620 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics IRF620.

Product Attribute Attribute Value
MountThrough Hole
Mounting TypeThrough Hole
Package / CaseTO-220-3
Number of Pins3Pins
Transistor Element MaterialSILICON
Current - Continuous Drain (Id) @ 25℃6A Tc
Drive Voltage (Max Rds On, Min Rds On)10V
Number of Elements1 Element
Power Dissipation (Max)70W Tc
Operating Temperature-65°C~150°C TJ
PackagingTube
SeriesPowerMESH™ II
JESD-609 Codee3
Part StatusObsolete
Moisture Sensitivity Level (MSL)1 (Unlimited)
Number of Terminations3Terminations
ECCN CodeEAR99
Product Attribute Attribute Value
Terminal FinishMatte Tin (Sn)
Additional FeatureFAST SWITCHING
Voltage - Rated DC200V
Peak Reflow Temperature (Cel)NOT SPECIFIED
Reach Compliance Codenot_compliant
Current Rating6A
Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
Base Part NumberIRF6
Pin Count3
Qualification StatusNot Qualified
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation70W
FET TypeN-Channel
Transistor ApplicationSWITCHING
Rds On (Max) @ Id, Vgs800m Ω @ 3A, 10V
Vgs(th) (Max) @ Id4V @ 250μA
Product Attribute Attribute Value
Input Capacitance (Ciss) (Max) @ Vds350pF @ 25V
Gate Charge (Qg) (Max) @ Vgs27nC @ 10V
Rise Time30ns
Vgs (Max)±20V
Continuous Drain Current (ID)6A
Threshold Voltage4V
JEDEC-95 CodeTO-220AB
Gate to Source Voltage (Vgs)20V
Drain Current-Max (Abs) (ID)6A
Drain-source On Resistance-Max0.8Ohm
Drain to Source Breakdown Voltage200V
Pulsed Drain Current-Max (IDM)24A
Feedback Cap-Max (Crss)80 pF
RoHS StatusROHS3 Compliant
Lead FreeLead Free
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IRF620 Features

  • 5.0A, 200V, RDS (on) = 0.8Ω @VGS = 10 V

  • Low gate charge  (typical 12 nC)

  • Low Cross (typical 10 pF)

  • Fast switching 

  • 100% avalanche tested

  • Improved dv/dt capability

  • Type Designator: IRF620

  • Type of Transistor  : MOSFET 

  • Type of Control Channel: N -Channel

 

IRF620 Applications

  • High Current

  • High-Speed Switching 

  • Uninterruptible Power Supply (UPS)

  • Motor Control

  • Audio Amplifiers

  • Industrial Actuators

 

IRF620 Equivalents and Replacements

You can replace the IRF620PBF with the IRF620, IRF630, IRF630PBF, IRF634, IRF640, IRF640PBF, IRF644, IRF740, IRF740A, IRF740B, IRF740LC, IRFB13N50A, IRFB17N50L, IRFB9N60A

IRF620 Dimensions

IRF620 Manufacturer

STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio, and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology, and its products play a key role in enabling today's convergence trends.

Datasheet PDF

Download datasheets and manufacturer documentation for STMicroelectronics IRF620.

IRF620 Documents

Download datasheets and manufacturer documentation for IRF620

Frequently Asked Questions

What is IRD620 used for?
IRF620 is a 6A 200V N-Channel Power MOSFET N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This device has been carefully designed to decrease on-state resistance, provide improved switching performance, and withstand high-energy pulses.
What is the current of IRF620?
200V
FAQ
What is IRD620 used for?
IRF620 is a 6A 200V N-Channel Power MOSFET N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This device has been carefully designed to decrease on-state resistance, provide improved switching performance, and withstand high-energy pulses.
What is the current of IRF620?
200V

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