In a Tube of 50, IRF630 N-Channel MOSFET, 9 A, 200 V STripFET, 3-Pin TO-220 STMicroelectronics
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Jul 25, 2021
Gilbert Browne
checking MOSFET very simple using continuity tester how to check mosfet
In a Tube of 50, IRF630 N-Channel MOSFET, 9 A, 200 V STripFET, 3-Pin TO-220 STMicroelectronics
The IRF630 is a N-channel 200 V, 0.29 Ω typ., 9 A, power mosfet in a TO 220 package. This article mainly introduces its pinout, application, datasheet and more detailed information about IRF630.
IRF630
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.65707 | $1.66 |
| 10+ | $1.56327 | $15.63 |
| 100+ | $1.47479 | $147.48 |
| 500+ | $1.39131 | $695.66 |
| 1000+ | $1.31256 | $1312.56 |
The IRF630 is a N-channel 200 V, 0.29 Ω typ., 9 A, power mosfet in a TO 220 package, realizing with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters.
Symbol
Footprint
3D Model
• Extremely high dv/dt capability
• Very low intrinsic capacitance
• Gate charge minimized
STMicroelectronics IRF630 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics IRF630.
STMicroelectronics IRF630 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics IRF630.
| Product Attribute | Attribute Value | |
|---|---|---|
| Lifecycle Status | ACTIVE (Last Updated: 8 months ago) | |
| Factory Lead Time | 12 Weeks | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 | |
| Number of Pins | 3Pins | |
| Weight | 4.535924g | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 9A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 75W Tc | |
| Operating Temperature | -65°C~150°C TJ | |
| Packaging | Tube | |
| Series | MESH OVERLAY™ II | |
| JESD-609 Code | e3 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations |
| Product Attribute | Attribute Value | |
|---|---|---|
| ECCN Code | EAR99 | |
| Resistance | 400mOhm | |
| Terminal Finish | Matte Tin (Sn) | |
| Additional Feature | AVALANCHE RATED | |
| Voltage - Rated DC | 200V | |
| Current Rating | 9A | |
| Base Part Number | IRF6 | |
| Pin Count | 3 | |
| Lead Pitch | 2.54mm | |
| Element Configuration | Single | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 75W | |
| Turn On Delay Time | 10 ns | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 400m Ω @ 4.5A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 700pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 45nC @ 10V |
| Product Attribute | Attribute Value | |
|---|---|---|
| Rise Time | 15ns | |
| Vgs (Max) | ±20V | |
| Reverse Recovery Time | 170 ns | |
| Continuous Drain Current (ID) | 9A | |
| Threshold Voltage | 3V | |
| JEDEC-95 Code | TO-220AB | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain Current-Max (Abs) (ID) | 9A | |
| Drain to Source Breakdown Voltage | 200V | |
| Dual Supply Voltage | 200V | |
| Nominal Vgs | 3 V | |
| Feedback Cap-Max (Crss) | 50 pF | |
| Height | 15.75mm | |
| Length | 10.4mm | |
| Width | 4.6mm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
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STMicroelectronics is an unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
Download datasheets and manufacturer documentation for STMicroelectronics IRF630.
Download datasheets and manufacturer documentation for IRF630
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