Mosfet amplifier using IRF640/9540
MOSFET N-CH 200V 18A TO-220
The IRF640 is an N Channel enhancement mode power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.
MOSFET N-CH 200V 18A TO-220 The IRF640 is an N Channel enhancement mode power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.
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Aug 25, 2021
Nathan Theresa
Mosfet amplifier using IRF640/9540
MOSFET N-CH 200V 18A TO-220
The IRF640 is an N Channel enhancement mode power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.
The IRF640 is an N Channel enhancement mode power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. It is designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high-power bipolar switching transistors requiring high-speed and low gate drive power. The IRF640 can be operated directly from integrated circuits. It can also be used as an amplifier such as audio amplifiers and audio amplifier stages.

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Transistor Type: N Channel
Package Type: TO-220
Max Drain to Source Voltage: 200 V
Max Gate to Source Voltage: ±20 V
Max Continues Drain Current: 18 A
Max Pulsed Drain Current: 72 A
Max Power Dissipation: 125 W
Storage & Operating temperature: -65 to +150 Centigrade
Extremely high dv/dt capability
Very low intrinsic capacitances
Gate charge minimized
Repetitive avalanche rated
Fast switching
Ease of paralleling
Simple drive requirements
STMicroelectronics IRF640 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics IRF640.
STMicroelectronics IRF640 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics IRF640.
| Product Attribute | Attribute Value | |
|---|---|---|
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 | |
| Number of Pins | 3Pins | |
| Transistor Element Material | SILICON | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 125W Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Current - Continuous Drain (Id) @ 25℃ | 18A Tc | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tube | |
| Series | MESH OVERLAY™ | |
| JESD-609 Code | e3 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations |
| Product Attribute | Attribute Value | |
|---|---|---|
| ECCN Code | EAR99 | |
| Terminal Finish | Matte Tin (Sn) | |
| Voltage - Rated DC | 200V | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | not_compliant | |
| Current Rating | 18A | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Base Part Number | IRF6 | |
| Pin Count | 3 | |
| Qualification Status | Not Qualified | |
| Element Configuration | Single | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 125W | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 180m Ω @ 9A, 10V |
| Product Attribute | Attribute Value | |
|---|---|---|
| Vgs(th) (Max) @ Id | 4V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 1560pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 72nC @ 10V | |
| Rise Time | 27ns | |
| Vgs (Max) | ±20V | |
| Fall Time (Typ) | 25 ns | |
| Continuous Drain Current (ID) | 18A | |
| JEDEC-95 Code | TO-220AB | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain to Source Breakdown Voltage | 200V | |
| Pulsed Drain Current-Max (IDM) | 72A | |
| Avalanche Energy Rating (Eas) | 280 mJ | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Contains Lead |

IRF640 Unclamped Inductive Load Test Circuit

IRF640 Switching Times Test Circuits For Resistive Load

IRF640 Gate Charge Test Circuit

IRF640 Test Circuit For Inductive Load Switching And Diode Recovery Times

YTA640, IRF641, IRF642, IRFB4620, IRFB5620, 2SK740, STP19NB20, YTA640, BUK455-200A, BUK456-200A, BUK456-200B, BUZ30A, MTP20N20E, RFP15N15, 2SK891, 18N25, 18N40, 22N20
Please check the pin configuration and parameters before replacing them in your circuit.
The IRF640 can be used in general-purpose switching and amplification applications. It can be used in circuits where high-speed switching is required, for example, battery backup systems, uninterruptable power supplies, etc. The IRF640 can be operated directly from integrated circuits and can also be used as an amplifier such as audio amplifiers and audio amplifier stages.
Uninterruptible power supply (UPS)
DC to DC converters
Motor control circuits
Battery chargers and BMS
Solar power supply applications
TV and computer monitor power supplies
Fast switching applications

IRF640 Package Outline

IRF640 Mechanical Data
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio, and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology, and its products play a key role in enabling today's convergence trends.
Download datasheets and manufacturer documentation for STMicroelectronics IRF640.
Download datasheets and manufacturer documentation for IRF640
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