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IRF640 Power MOSFET: Datasheet, Pinout, and Circuits

MOSFET N-CH 200V 18A TO-220 The IRF640 is an N Channel enhancement mode power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.

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Aug 25, 2021

Nathan Theresa

Mosfet amplifier using IRF640/9540

 

MOSFET N-CH 200V 18A TO-220

The IRF640 is an N Channel enhancement mode power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.

IRF640

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IRF640 Description

The IRF640 is an N Channel enhancement mode power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. It is designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high-power bipolar switching transistors requiring high-speed and low gate drive power. The IRF640 can be operated directly from integrated circuits. It can also be used as an amplifier such as audio amplifiers and audio amplifier stages.

 

IRF640 Pinout

IRF640 CAD Model

Symbol

 

Footprint

 

3D Model

IRF640 Features

  • Transistor Type: N Channel

  • Package Type: TO-220

  • Max Drain to Source Voltage: 200 V

  • Max Gate to Source Voltage: ±20 V

  • Max Continues Drain Current: 18 A

  • Max Pulsed Drain Current: 72 A

  • Max Power Dissipation: 125 W

  • Storage & Operating temperature: -65 to +150 Centigrade

IRF640 Advantages

  • Extremely high dv/dt capability

  • Very low intrinsic capacitances

  • Gate charge minimized

  • Repetitive avalanche rated

  • Fast switching

  • Ease of paralleling

  • Simple drive requirements

Specifications

STMicroelectronics IRF640 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics IRF640.

IRF640 Tech Specifications

STMicroelectronics IRF640 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics IRF640.

Product Attribute Attribute Value
MountThrough Hole
Mounting TypeThrough Hole
Package / CaseTO-220-3
Number of Pins3Pins
Transistor Element MaterialSILICON
Number of Elements1 Element
Power Dissipation (Max)125W Tc
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25℃18A Tc
Operating Temperature150°C TJ
PackagingTube
SeriesMESH OVERLAY™
JESD-609 Codee3
Part StatusObsolete
Moisture Sensitivity Level (MSL)1 (Unlimited)
Number of Terminations3Terminations
Product Attribute Attribute Value
ECCN CodeEAR99
Terminal FinishMatte Tin (Sn)
Voltage - Rated DC200V
Peak Reflow Temperature (Cel)NOT SPECIFIED
Reach Compliance Codenot_compliant
Current Rating18A
Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
Base Part NumberIRF6
Pin Count3
Qualification StatusNot Qualified
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation125W
FET TypeN-Channel
Transistor ApplicationSWITCHING
Rds On (Max) @ Id, Vgs180m Ω @ 9A, 10V
Product Attribute Attribute Value
Vgs(th) (Max) @ Id4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds1560pF @ 25V
Gate Charge (Qg) (Max) @ Vgs72nC @ 10V
Rise Time27ns
Vgs (Max)±20V
Fall Time (Typ)25 ns
Continuous Drain Current (ID)18A
JEDEC-95 CodeTO-220AB
Gate to Source Voltage (Vgs)20V
Drain to Source Breakdown Voltage200V
Pulsed Drain Current-Max (IDM)72A
Avalanche Energy Rating (Eas)280 mJ
RoHS StatusROHS3 Compliant
Lead FreeContains Lead
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IRF640 Test Circuits

IRF640 Unclamped Inductive Load Test Circuit

 

IRF640 Switching Times Test Circuits For Resistive Load

 

IRF640 Gate Charge Test Circuit

 

IRF640 Test Circuit For Inductive Load Switching And Diode Recovery Times

 

IRF640 Alternatives

IRF640 Equivalents

YTA640, IRF641, IRF642, IRFB4620, IRFB5620, 2SK740, STP19NB20, YTA640, BUK455-200A, BUK456-200A, BUK456-200B, BUZ30A, MTP20N20E, RFP15N15, 2SK891, 18N25, 18N40, 22N20

Please check the pin configuration and parameters before replacing them in your circuit.

Where to use IRF640

The IRF640 can be used in general-purpose switching and amplification applications. It can be used in circuits where high-speed switching is required, for example, battery backup systems, uninterruptable power supplies, etc. The IRF640 can be operated directly from integrated circuits and can also be used as an amplifier such as audio amplifiers and audio amplifier stages.

IRF640 Applications

  • Uninterruptible power supply (UPS)

  • DC to DC converters

  • Motor control circuits

  • Battery chargers and BMS

  • Solar power supply applications

  • TV and computer monitor power supplies

  • Fast switching applications

 

IRF640 Package

IRF640 Package Outline

 

IRF640 Mechanical Data

IRF640 Manufacturer

STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio, and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology, and its products play a key role in enabling today's convergence trends.

Datasheet PDF

Download datasheets and manufacturer documentation for STMicroelectronics IRF640.

IRF640 Documents

Download datasheets and manufacturer documentation for IRF640

Frequently Asked Questions

1.What is IRF640?
The IRF640 is an N Channel MOSFET designed for high-speed switching purposes. This high-speed switching capability can be very useful in applications where switching speed is crucial, for example in a UPS circuit or in any other application where the user wants to change the load input power from one source to another.
2.How to safely long run IRF640 in a circuit?
For long-term performance, we always suggest using all components at least 20% below their maximum ratings and the same goes with IRF640. The max drain current is 18A therefore do not drive a load of more than 14.4A. The maximum load voltage is 200V and to stay under the safe side do not drive a load of more than 160V. The maximum pulsed drain current is 72A so the max pulsed load should not exceed 57.6A. Use a proper heat sink with the transistor and always store or operate the device at temperatures above -55 degrees centigrade and below +150 degrees centigrade.
3.How does AP Channel connect to MOSFET?
To turn on a P-Channel Enhancement-type MOSFET, apply a positive voltage VS to the source of the MOSFET and apply a negative voltage to the gate terminal of the MOSFET (the gate must be sufficiently more negative than the threshold voltage across the drain-source region (VG DS).
4.Can MOSFET switch AC?
A MOSFET can only be used to control DC loads since it is a unidirectional switch - current flow can be controlled when it is flowing from drain to source, but can not be controlled from source to drain. So, certainly, it can not be used to control AC loads.
5.Can a MOSFET conduct in both directions?
MOSFETs will conduct equally in both directions when they are turned "on." An interesting consequence of the body-source connection is that, even if you turn the transistor "off," it will still conduct in the reverse direction.
FAQ
1.What is IRF640?
The IRF640 is an N Channel MOSFET designed for high-speed switching purposes. This high-speed switching capability can be very useful in applications where switching speed is crucial, for example in a UPS circuit or in any other application where the user wants to change the load input power from one source to another.
2.How to safely long run IRF640 in a circuit?
For long-term performance, we always suggest using all components at least 20% below their maximum ratings and the same goes with IRF640. The max drain current is 18A therefore do not drive a load of more than 14.4A. The maximum load voltage is 200V and to stay under the safe side do not drive a load of more than 160V. The maximum pulsed drain current is 72A so the max pulsed load should not exceed 57.6A. Use a proper heat sink with the transistor and always store or operate the device at temperatures above -55 degrees centigrade and below +150 degrees centigrade.
3.How does AP Channel connect to MOSFET?
To turn on a P-Channel Enhancement-type MOSFET, apply a positive voltage VS to the source of the MOSFET and apply a negative voltage to the gate terminal of the MOSFET (the gate must be sufficiently more negative than the threshold voltage across the drain-source region (VG DS).
4.Can MOSFET switch AC?
A MOSFET can only be used to control DC loads since it is a unidirectional switch - current flow can be controlled when it is flowing from drain to source, but can not be controlled from source to drain. So, certainly, it can not be used to control AC loads.
5.Can a MOSFET conduct in both directions?
MOSFETs will conduct equally in both directions when they are turned "on." An interesting consequence of the body-source connection is that, even if you turn the transistor "off," it will still conduct in the reverse direction.

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