IRF640N is the fifth Generation HEXFET Power MOSFETs from International Rectifier utilizing advanced processing techniques to achieve extremely low on-resistance per silicon area. This passage will tell you something about it.
3235
Apr 12, 2022
Fanny Stuart
IRF640N Power Amp DC 12v
IRF640N is the fifth Generation HEXFET Power MOSFETs from International Rectifier utilizing advanced processing techniques to achieve extremely low on-resistance per silicon area. This passage will tell you something about it.
IRF640NPBF
The IR MOSFET series of power MOSFETs use proven silicon technologies to provide designers with a diverse device portfolio to serve a variety of applications including DC motors, inverters, SMPS, lights, load switches, and battery-powered applications. For ease of design, the devices come in a choice of surface mount and through-hole packaging with industry-standard footprints.
This page will go through the IRF640N in detail, from its features and pinout to its specifications and uses, as well as the IRF640N datasheet.
MOSFET, in short, is a metal oxide semiconductor field-effect transistor used to switch or amplify voltages in circuits. Being part of the field-effect transistor family, it is a current-controlled device that is constructed with 3 terminals;
1. Source
2. Gain
3. Drain
The purpose of a MOSFET transistor is essentially to control voltage/current flow between the source and the drain. The working principle differs based on the type of MOSFET.
Infineon Technologies IRF640NPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF640NPBF.
Infineon Technologies IRF640NPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF640NPBF.
| Product Attribute | Attribute Value | |
|---|---|---|
| Factory Lead Time | 12 Weeks | |
| Contact Plating | Tin | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 | |
| Number of Pins | 3Pins | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 18A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 150W Tc | |
| Turn Off Delay Time | 23 ns | |
| Operating Temperature | -55°C~175°C TJ | |
| Packaging | Tube | |
| Series | HEXFET® | |
| Published | 1999 | |
| JESD-609 Code | e3 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| Termination | Through Hole |
| Product Attribute | Attribute Value | |
|---|---|---|
| ECCN Code | EAR99 | |
| Resistance | 150mOhm | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | |
| Voltage - Rated DC | 200V | |
| Peak Reflow Temperature (Cel) | 250 | |
| Current Rating | 18A | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Number of Channels | 1Channel | |
| Element Configuration | Single | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 150W | |
| Case Connection | DRAIN | |
| Turn On Delay Time | 10 ns | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 150m Ω @ 11A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 1160pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 67nC @ 10V | |
| Rise Time | 19ns | |
| Vgs (Max) | ±20V |
| Product Attribute | Attribute Value | |
|---|---|---|
| Fall Time (Typ) | 5.5 ns | |
| Continuous Drain Current (ID) | 18A | |
| Threshold Voltage | 2V | |
| JEDEC-95 Code | TO-220AB | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain to Source Breakdown Voltage | 200V | |
| Pulsed Drain Current-Max (IDM) | 72A | |
| Dual Supply Voltage | 200V | |
| Avalanche Energy Rating (Eas) | 247 mJ | |
| Recovery Time | 241 ns | |
| Max Junction Temperature (Tj) | 175°C | |
| Nominal Vgs | 4 V | |
| Height | 19.8mm | |
| Length | 10.668mm | |
| Width | 4.826mm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Contains Lead, Lead Free |
Symbol
Footprint
3D Models
1. Advanced Process Technology
2. Dynamic dv/dt Rating
3. 175°C Operating Temperature
4. Fast Switching
5. Fully Avalanche Rated
6. Ease of Paralleling
7. Simple Drive Requirements
IRF640N Diagram
Gate Charge Test Circuit
Switching Time Test Circuit
Unclamped Energy Test Circuit
-Ruggedness has been improved.
-Wide distribution partner availability
-Industry-standard qualification
-High performance in low-frequency applications
-Standard pin-out allows for drop-in replacement
-High current capability
You can replace the IRF640N with the IRFB23N20D, IRFB260N, IRFB31N20D, IRFB38N20D, IRFB4127, IRFB4227, IRFB4229, IRFB4233, IRFB42N20D, IRFB4332.
International Rectifier was an American power management technology company manufacturing analog and mixed-signal ICs, advanced circuit devices, integrated power systems, and high-performance integrated components for computing. On 13 January 2015, the company became a part of Infineon Technologies.
IR's products, as a part of Infineon Technologies' overall semiconductor portfolio, continue to be used in many applications including lighting, automobile, satellite, aircraft, and defense systems; as well as key components in power supply systems in electronics-based products that include especially microcomputers, servers, networking, and telecommunications equipment.
TO-220AB
Download datasheets and manufacturer documentation for IRF640NPBF
TAGS
Comments