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MOSFET N-CH 200V 18A D2PAK
The IRF640S is the third generation N-Channel power MOSFET with200V 18A from Vishay, available in the D2PAK package.
MOSFET N-CH 200V 18A D2PAK
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Aug 8, 2021
Regan Pullman
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MOSFET N-CH 200V 18A D2PAK
The IRF640S is the third generation N-Channel power MOSFET with200V 18A from Vishay, available in the D2PAK package.

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The IRF640S is the third generation N-Channel power MOSFET with200V 18A from Vishay, available in the D2PAK package, providing the designer with the best combinations of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
• Surface mount
• Low-profile through-hole
• Available in tape and reel
• Dynamic dV/dt rating
• 150 °C operating temperature
• Fast switching
• Fully avalanche rated
Vishay Siliconix IRF640S technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRF640S.
Vishay Siliconix IRF640S technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRF640S.
| Product Attribute | Attribute Value | |
|---|---|---|
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | |
| Supplier Device Package | D2PAK | |
| Weight | 2.240009g | |
| Current - Continuous Drain (Id) @ 25℃ | 18A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Power Dissipation (Max) | 3.1W Ta 130W Tc | |
| Turn Off Delay Time | 45 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tube | |
| Published | 2016 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Product Attribute | Attribute Value | |
|---|---|---|
| Resistance | 180mOhm | |
| Max Operating Temperature | 150°C | |
| Min Operating Temperature | -55°C | |
| Voltage - Rated DC | 200V | |
| Current Rating | 18A | |
| Number of Channels | 1Channel | |
| Element Configuration | Single | |
| Turn On Delay Time | 14 ns | |
| FET Type | N-Channel | |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 11A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 1300pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 70nC @ 10V | |
| Rise Time | 51ns |
| Product Attribute | Attribute Value | |
|---|---|---|
| Drain to Source Voltage (Vdss) | 200V | |
| Vgs (Max) | ±20V | |
| Fall Time (Typ) | 36 ns | |
| Continuous Drain Current (ID) | 18A | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain to Source Breakdown Voltage | 200V | |
| Input Capacitance | 1.3nF | |
| Drain to Source Resistance | 180mOhm | |
| Rds On Max | 180 mΩ | |
| Height | 4.83mm | |
| Length | 10.67mm | |
| Width | 9.65mm | |
| RoHS Status | Non-RoHS Compliant | |
| Lead Free | Contains Lead |


The test circuits for IRF640S is given below.








Vishay's product portfolio is an unmatched collection of discrete semiconductors (diodes, MOSFETs, and optoelectronics) and passive components (resistors, inductors, and capacitors). These components are used in virtually all types of electronic devices and equipment in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, and medical markets. Vishay is proud to be a major partner with Digi-Key.
Download datasheets and manufacturer documentation for Vishay Siliconix IRF640S.
Download datasheets and manufacturer documentation for IRF640S
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