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IRF640S Power MOSFET: Pinout, Alternative and Circuit

MOSFET N-CH 200V 18A D2PAK

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Aug 8, 2021

Regan Pullman

MOSFET N-CH 200V 18A D2PAK

The IRF640S is the third generation N-Channel power MOSFET with200V 18A from Vishay, available in the D2PAK package.

IRF640S

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IRF640S Pinout

IRF640S CAD Model

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IRF640S Description

The IRF640S is the third generation N-Channel power MOSFET with200V 18A from Vishay, available in the D2PAK package, providing the designer with the best combinations of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

IRF640S Features

• Surface mount

• Low-profile through-hole

• Available in tape and reel

• Dynamic dV/dt rating

• 150 °C operating temperature

• Fast switching

• Fully avalanche rated

Specifications

Vishay Siliconix IRF640S technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRF640S.

IRF640S Tech Specifications

Vishay Siliconix IRF640S technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRF640S.

Product Attribute Attribute Value
MountSurface Mount
Mounting TypeSurface Mount
Package / CaseTO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageD2PAK
Weight2.240009g
Current - Continuous Drain (Id) @ 25℃18A Tc
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)3.1W Ta 130W Tc
Turn Off Delay Time45 ns
Operating Temperature-55°C~150°C TJ
PackagingTube
Published2016
Part StatusObsolete
Moisture Sensitivity Level (MSL)1 (Unlimited)
Product Attribute Attribute Value
Resistance180mOhm
Max Operating Temperature150°C
Min Operating Temperature-55°C
Voltage - Rated DC200V
Current Rating18A
Number of Channels1Channel
Element ConfigurationSingle
Turn On Delay Time14 ns
FET TypeN-Channel
Rds On (Max) @ Id, Vgs180mOhm @ 11A, 10V
Vgs(th) (Max) @ Id4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds1300pF @ 25V
Gate Charge (Qg) (Max) @ Vgs70nC @ 10V
Rise Time51ns
Product Attribute Attribute Value
Drain to Source Voltage (Vdss)200V
Vgs (Max)±20V
Fall Time (Typ)36 ns
Continuous Drain Current (ID)18A
Gate to Source Voltage (Vgs)20V
Drain to Source Breakdown Voltage200V
Input Capacitance1.3nF
Drain to Source Resistance180mOhm
Rds On Max180 mΩ
Height4.83mm
Length10.67mm
Width9.65mm
RoHS StatusNon-RoHS Compliant
Lead FreeContains Lead
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IRF640S Alternatives

IRF640S VS. IRF640STRR

IRF640S Test Circuit

The test circuits for IRF640S is given below.

IRF640S Package

IRF640S Manufacturer

Vishay's product portfolio is an unmatched collection of discrete semiconductors (diodes, MOSFETs, and optoelectronics) and passive components (resistors, inductors, and capacitors). These components are used in virtually all types of electronic devices and equipment in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, and medical markets. Vishay is proud to be a major partner with Digi-Key.

Datasheet PDF

Download datasheets and manufacturer documentation for Vishay Siliconix IRF640S.

IRF640S Documents

Download datasheets and manufacturer documentation for IRF640S

Frequently Asked Questions

What is irf640s?
The IRF640S is the third generation N-Channel power MOSFET with200V 18A from Vishay, available in the D2PAK package, providing the designer with the best combinations of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
What is moisture sensitivity level (MSL) of irf640s?
1 (Unlimited).
What is the operating temperature of irf640s?
-55°C to 150°C (TJ).
FAQ
What is irf640s?
The IRF640S is the third generation N-Channel power MOSFET with200V 18A from Vishay, available in the D2PAK package, providing the designer with the best combinations of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
What is moisture sensitivity level (MSL) of irf640s?
1 (Unlimited).
What is the operating temperature of irf640s?
-55°C to 150°C (TJ).

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