MOSFET N-CH 250V 14A TO-220AB
The IRF644 is the third generation power MOSFET from Vishay. This article will unlock more details about IRF644.
IRF644 Power MOSFET: Datasheet, Pinout, Test Circuit
MOSFET N-CH 250V 14A TO-220AB The IRF644 is the third generation power MOSFET from Vishay. This article will unlock more details about IRF644.
281
Sep 14, 2021
Jonas Stevenson
IRF644
Inquiry
Min.: 1 Mult.: 1
Quick Links
IRF644 Pinout
IRF644 CAD Model
IRF644 Symbol
IRF644 Footprint
IRF644 3D Model
IRF644 Description
The IRF644 is the third generation power MOSFET from Vishay providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.
Specifications
Vishay Siliconix IRF644 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRF644.
IRF644 Tech Specifications
IRF644 Tech Specifications
Vishay Siliconix IRF644 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRF644.
| Product Attribute | Attribute Value | |
|---|---|---|
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 | |
| Number of Pins | 3Pins | |
| Supplier Device Package | TO-220AB | |
| Weight | 6.000006g | |
| Current - Continuous Drain (Id) @ 25℃ | 14A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 125W Tc | |
| Turn Off Delay Time | 53 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tube | |
| Published | 2011 | |
| Part Status | Obsolete |
| Product Attribute | Attribute Value | |
|---|---|---|
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Max Operating Temperature | 150°C | |
| Min Operating Temperature | -55°C | |
| Voltage - Rated DC | 250V | |
| Current Rating | 14A | |
| Number of Channels | 1Channel | |
| Element Configuration | Single | |
| Power Dissipation | 125W | |
| Turn On Delay Time | 11 ns | |
| FET Type | N-Channel | |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 8.4A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 1300pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 68nC @ 10V | |
| Rise Time | 24ns |
| Product Attribute | Attribute Value | |
|---|---|---|
| Drain to Source Voltage (Vdss) | 250V | |
| Vgs (Max) | ±20V | |
| Fall Time (Typ) | 49 ns | |
| Continuous Drain Current (ID) | 14A | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain to Source Breakdown Voltage | 250V | |
| Input Capacitance | 1.3nF | |
| Drain to Source Resistance | 280mOhm | |
| Rds On Max | 280 mΩ | |
| Height | 9.01mm | |
| Length | 10.41mm | |
| Width | 4.7mm | |
| Radiation Hardening | No | |
| RoHS Status | Non-RoHS Compliant | |
| Lead Free | Lead Free |
IRF644 Features
• Dynamic dV/dt rating
• Repetitive avalanche rated
• Fast switching
• Ease of paralleling
• Simple drive requirements
IRF644 Alternatives
| Parts | Description | Manufacturer |
| BUZ255 TRANSISTORS | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | Infineon Technologies AG |
| IRF644 TRANSISTORS | 14A, 250V, 0.28ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Intersil Corporation |
| MTP16N25E TRANSISTORS | 16A, 250V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, CASE 221A-06, 3 PIN | ON Semiconductor |
| IRF644PBF TRANSISTORS | Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN | Vishay Siliconix |
| STP16NB25 TRANSISTORS | 16A, 250V, 0.28ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | STMicroelectronics |
IRF644 Test Circuits and Waveforms
IRF644 Test Circuit and Waveforms-1
IRF644 Test Circuit and Waveforms-2
IRF644 Test Circuit and Waveforms-3
IRF644 Test Circuit and Waveforms-4
IRF644 Package
IRF644 Manufacturer
Vishay, through its Siliconix subsidiary, leads the industry in the development of power semiconductor products that improve the efficiency of power management circuitry in end products while reducing space requirements. As the world's number-one brand of low-voltage power MOSFETs (metal-oxide-semiconductor field-effect transistors), Vishay Siliconix products play a key role in making handheld and portable electronic systems operate more efficiently from smaller and lighter battery packs. Higher-voltage Vishay Siliconix power MOSFETs are used for applications from electric motor control in industrial systems to converting power in the switches and routers that enable the world's communications networks. Vishay Siliconix power ICs address markets ranging from mobile communications and computing to the fixed telecom infrastructure and include switchmode regulators, linear regulators, and power management devices. A number of devices, built on specialized process flows, are purpose-made for the medical, automotive, and military markets.
Datasheet PDF
Download datasheets and manufacturer documentation for Vishay Siliconix IRF644.
IRF644 Documents
IRF644 Documents
Download datasheets and manufacturer documentation for IRF644
Datasheets
IRF644-Vishay-datasheet-14187880.pdf
IRF644
IRF644-Vishay-datasheet-8398960.pdf
IRF644-Vishay-datasheet-91540.pdf
IRF644-Vishay-datasheet-39741.pdf
Other Related Documents
Packaging Information
RohsStatement
Vishay-company-15.pdf
PCN Obsolescence/ EOL
SIL-018-2015-Rev-0 20/May/2015
Frequently Asked Questions
What is IRF644?
The IRF644 is the third generation power MOSFET from Vishay providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.
Is the IRF630 same as the IRF644?
IRF630 is a MOS field-effect tube, parameters: N channel, 200V, 9A, 75W,
IRF644 is a MOS field-effect tube with parameters: N channel, 250V, 14A, 125W.
But from the above two parameters, it can be seen that the two can still be used interchangeably on circuits with low requirements. If the circuits with high requirements are required, then attention should be paid.
What are power MOSFETs used for?
Power MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) are three-terminal silicon devices that function by applying a signal to the gate that controls current conduction between source and drain.
FAQ
What is IRF644?
The IRF644 is the third generation power MOSFET from Vishay providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.
Is the IRF630 same as the IRF644?
IRF630 is a MOS field-effect tube, parameters: N channel, 200V, 9A, 75W,
IRF644 is a MOS field-effect tube with parameters: N channel, 250V, 14A, 125W.
But from the above two parameters, it can be seen that the two can still be used interchangeably on circuits with low requirements. If the circuits with high requirements are required, then attention should be paid.
What are power MOSFETs used for?
Power MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) are three-terminal silicon devices that function by applying a signal to the gate that controls current conduction between source and drain.
TAGS
Comments