Transistors - FETs, MOSFETs - Single MOSFET N-CH 400V 5.5A TO-220 IRF730 is an N channel MOSFET available in TO-220 and TO-220AB packages. This post will show you more details about IRF730.
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Oct 25, 2021
Mark Yonng
Transistor IRF730
Transistors - FETs, MOSFETs - Single MOSFET N-CH 400V 5.5A TO-220
IRF730 is an N channel MOSFET available in TO-220 and TO-220AB packages. This post will show you more details about IRF730. There is a huge range of Semiconductors, Capacitors, Resistors and ICs in stock. Welcome RFQ.
IRF730
IRF730 Pinout
IRF730 Symbol
IRF730 Footprint
IRF730 3D Model
The IRF730 is an N channel MOSFET with TO-220 and TO-220AB packaging. This MOSFET can drive a load of up to 5.5A at 400V load voltage, with a maximum power dissipation of 75 Watts and a maximum pulse drain current of 22A.
IRF730 can also be used for audio amplification purposes and can be used to build high power audio amplifiers.
STMicroelectronics is a globally recognized semiconductor company. They are dedicated to developing semiconductor solutions for various microelectronics applications. STMicroelectronics enjoys unrivalled silicon and system expertise, strong manufacturing strength, IP portfolio, and solid relationships with their strategic partners. Based on these advantages, STMicroelectronics has become a pioneer in System-on-Chip (SoC) technology and its products have a positive effect in realizing today's convergence trends.
Package Type: TO-220AB And TO-220
Transistor Type: N Channel
Max Voltage Applied From Drain to Source: 400V
Max Gate to Source Voltage Should Be: ±20V
Max Continues Drain Current is: 5.5A
Max Pulsed Drain Current is: 22A
Max Power Dissipation is: 75W
Minimum Voltage Required to Conduct: 2V to 4V
Max Storage & Operating temperature Should Be: -55 to +150℃
The equivalent for IRF730:
IRFS731
IRF730FI
IRF730S
IRFI730G
BUZ60
IRFS730
IRF330
IRF331
STP7NA40
The IRF730 can be used in high-voltage applications up to 400 volts. Aside from that, this transistor is suitable for a wide range of general-purpose applications. It can also be used at the outputs of ICs and microcontrollers to drive loads up to 5.5A, as well as at the outputs of electronic platforms like the Arduino and Raspberry Pi.
IRF730 Test Circuit
IRF730 Test Circuit
To get better and longer-lasting performance from an electronic component, the designer or user should not use it at its highest capability or ratings; instead, we recommend using it at least 20% below its maximum ratings. As a result, the same holds true for the IRF730: the transistor's maximum drain to source voltage is 400V, so don't drive loads higher than 320V; the transistor's maximum continuous current is 5.5A, so don't drive loads higher than 4.4A. Because the maximum pulsed drain current is 22A, never drive a load greater than 17.6A and always operate and store the transistor at temperatures between -55 and +150 ℃.
IRF730 Package
STMicroelectronics IRF730 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics IRF730.
STMicroelectronics IRF730 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics IRF730.
| Product Attribute | Attribute Value | |
|---|---|---|
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 | |
| Number of Pins | 3Pins | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 5.5A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 100W Tc | |
| Turn Off Delay Time | 15 ns | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tube | |
| Series | PowerMESH™ II | |
| JESD-609 Code | e3 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Product Attribute | Attribute Value | |
|---|---|---|
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Matte Tin (Sn) | |
| Additional Feature | HIGH VOLTAGE, FAST SWITCHING | |
| Voltage - Rated DC | 400V | |
| Current Rating | 5.5A | |
| Base Part Number | IRF7 | |
| Pin Count | 3 | |
| Voltage | 400V | |
| Element Configuration | Single | |
| Current | 55A | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 100W | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 1 Ω @ 3A, 10V |
| Product Attribute | Attribute Value | |
|---|---|---|
| Vgs(th) (Max) @ Id | 4V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 530pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 24nC @ 10V | |
| Rise Time | 11ns | |
| Vgs (Max) | ±20V | |
| Fall Time (Typ) | 9 ns | |
| Continuous Drain Current (ID) | 5.5A | |
| JEDEC-95 Code | TO-220AB | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain-source On Resistance-Max | 1Ohm | |
| Drain to Source Breakdown Voltage | 400V | |
| Feedback Cap-Max (Crss) | 65 pF | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Contains Lead |
Download datasheets and manufacturer documentation for IRF730
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