MOSFET N-CH 400V 10A TO-220AB Hello everyone, I am Rose. Today we will have a discussion about IRF740.
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Aug 23, 2021
Vanessa Peggy
MOSFET IRF740 (getting to know it)
MOSFET N-CH 400V 10A TO-220AB
Hello everyone, I am Rose. Today we will have a discussion about IRF740. The IRF740 is an N-channel MOSFET that comes with 125W power dissipation. This article mainly introduce replacement, price, circuit and other detailed information about Vishay Siliconix IRF740.
IRF740
The IRF740 is an N-channel MOSFET that comes with 125W power dissipation. This is the power device dissipates during the working of this component.
This device is mainly used for fast switching and high voltage applications and comes with ultra-low on-resistance of 0.55 Ohms which is the resistance between drain and source terminals. IRF740 can also work as an amplifier and it can be used in many types of audio amplifier circuits.
The IRF740 contains three terminals named source, drain, and gate. Sometimes it is termed as a four-pin device when the body is also considered as its terminal.
The gate terminal is located between the source and drain terminals and is the area used for biasing of the device. While the drain terminal is the location from where electrons leave the channel and the source terminal is the location from where electrons enter the channel.
IRF740 has three pins, G stands for Gate, D stands for Drain, S stands for Source.
Symbol
Footprint
3D Model
●N-Channel Power MOSFET
●Continuous Drain Current (ID): 10A
●Gate Threshold Voltage (VGS-th) is 10V (limit = ±20V)
●Drain to Source Breakdown Voltage: 400V
●Drain Source Resistance (RDS) is 0.55 Ohms
●Rise Time and Fall Time is 27nS and 24nS
●Available in To-220 package
●Capable of fast switching
●Power Dissipation = 125W
●Junction Temperature = 150C
●Maximum Continuous Drain Current = 10A
●Drain-Source Capacitance = 1450pF
●Max Pulsed Drain Current is: 40A
●Minimum Voltage Required to Conduct: 2V to 4V
●Max Storage & Operating Temperature Should Be: -55 to +150 Centigrade
Vishay Siliconix IRF740 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRF740.
Vishay Siliconix IRF740 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRF740.
| Product Attribute | Attribute Value | |
|---|---|---|
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 | |
| Number of Pins | 3Pins | |
| Supplier Device Package | TO-220AB | |
| Weight | 6.000006g | |
| Current - Continuous Drain (Id) @ 25℃ | 10A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 125W Tc | |
| Turn Off Delay Time | 50 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tube | |
| Published | 2012 | |
| Part Status | Obsolete |
| Product Attribute | Attribute Value | |
|---|---|---|
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Max Operating Temperature | 150°C | |
| Min Operating Temperature | -55°C | |
| Voltage - Rated DC | 400V | |
| Current Rating | 10A | |
| Number of Channels | 1Channel | |
| Element Configuration | Single | |
| Power Dissipation | 125W | |
| Turn On Delay Time | 14 ns | |
| FET Type | N-Channel | |
| Rds On (Max) @ Id, Vgs | 550mOhm @ 6A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 1400pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 63nC @ 10V | |
| Rise Time | 27ns |
| Product Attribute | Attribute Value | |
|---|---|---|
| Drain to Source Voltage (Vdss) | 400V | |
| Vgs (Max) | ±20V | |
| Fall Time (Typ) | 24 ns | |
| Continuous Drain Current (ID) | 10A | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain to Source Breakdown Voltage | 400V | |
| Input Capacitance | 1.4nF | |
| Drain to Source Resistance | 550mOhm | |
| Rds On Max | 550 mΩ | |
| Height | 9.01mm | |
| Length | 10.41mm | |
| Width | 4.7mm | |
| Radiation Hardening | No | |
| RoHS Status | Non-RoHS Compliant | |
| Lead Free | Contains Lead |
Gate Charge Test Circuit
Switching times test circuit for resistive load
Test circuit for inductive load
Unclamped Inductive Load Test Circuit
IRF740 can be used in circuits in which you want to drive voltage load of upto 400V with 10A load current. Also the high speed switching capability makes it suitable in applications where user requires switching from one source to another in nanoseconds.
The 400V load capability makes it suitable to use in variety of high voltage applications such as uninterrupted power supplies, LED and other light ballasts etc. Moreover this transistor can also be used in audio amplifier circuit stages and also as a separate audio amplifier.
■Used in switching high power devices
■Used in inverter Circuits
■Used in DC-DC Converters
■ Used in control speed of motors
■ Used in LED dimmers or flashers
■ Used in USP
■ Used in instrumentation projects
■ Used in embedded projects
■ Used in fast switching applications
■ Used in high voltage applications
■ Used in AC motor drivers and controllers applications
■ Used in DC Motor drivers and controllers applications
■ Used in battery charger circuits
■ Used in lighting and ballast circuits
Vishay Intertechnology, Inc. is an American manufacturer of discrete semiconductors and passive electronic components founded by Polish-born businessman Felix Zandman. Vishay has manufacturing plants in Israel, Asia, Europe, and the Americas where it produces rectifiers, diodes, MOSFETs, optoelectronics, selected integrated circuits, resistors, capacitors, and inductors.
Vishay is one of the world's foremost manufacturers of power MOSFETs. They have a wide range of power electronic applications, including portable information appliances, internet communications infrastructure, power integrated circuits, cell phones, and notebook computers.
Download datasheets and manufacturer documentation for Vishay Siliconix IRF740.
Download datasheets and manufacturer documentation for IRF740
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