100V IRF530 Mosfet compared to 500V IRF830 Mosfet
MOSFET N-CH 500V 4.5A TO-220
The IRF830 is a fast switching high voltage N-Channel Power MOSFET with a low on-state resistance.
IRF830 Power MOSFET: Pinout, Datasheet, and Test Circuit
MOSFET N-CH 500V 4.5A TO-220 The IRF830 is a fast switching high voltage N-Channel Power MOSFET with a low on-state resistance.
153
Jul 9, 2021
Elliot Pitman
IRF830
25000In Stock
Min.: 1 Mult.: 1
Quick Links
IRF830 Description
The IRF830 is a fast switching high voltage N-Channel Power MOSFET with a low on-state resistance. The MOSFET has a maximum drain to source voltage of 500V. The MOSFET will have a drain to source internal resistance of 1.5Ω when triggered with 10V gate voltage. It can withstand a specified level of energy in the breakdown avalanche mode of operation and is designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. The IRF830 can be operated directly from integrated circuits.
IRF830 Pinout
IRF830 Features
-
Package: TO-220
-
Type of Transistor: MOSFET
-
Type of Control Channel: N-Channel
-
Max Power Dissipation (Pd): 75 W
-
Max Drain-Source Voltage |Vds|: 500 V
-
Max Gate-Source Voltage |Vgs|: ±20 V
-
Max Gate-Threshold Voltage |Vgs(th)|: 4 V
-
Max Drain Current |Id|: 4.5A
-
Max Junction Temperature (Tj): 150 °C
-
Total Gate Charge (Qg): 22 nC
-
Drain-Source Capacitance (Cd): 800 pF
-
Max Drain-Source On-State Resistance (Rds): 1.5 Ohm
-
Max Storage & Operating temperature: -55 to +150 °C
IRF830 Advantages
-
Dynamic dV/dt rating
-
Repetitive avalanche rated
-
Fast switching
-
Ease of paralleling
-
Simple drive requirements
Specifications
STMicroelectronics IRF830 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics IRF830.
IRF830 Tech Specifications
IRF830 Tech Specifications
STMicroelectronics IRF830 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics IRF830.
| Product Attribute | Attribute Value | |
|---|---|---|
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 4.5A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 100W Tc | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tube | |
| Series | PowerMESH™ | |
| JESD-609 Code | e3 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| Terminal Finish | Matte Tin (Sn) |
| Product Attribute | Attribute Value | |
|---|---|---|
| Additional Feature | HIGH VOLTAGE, FAST SWITCHING | |
| Voltage - Rated DC | 500V | |
| Current Rating | 4.5A | |
| Base Part Number | IRF8 | |
| Pin Count | 3 | |
| JESD-30 Code | R-PSFM-T3 | |
| Element Configuration | Single | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 100W | |
| Turn On Delay Time | 11.5 ns | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 1.5 Ω @ 2.7A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 610pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V |
| Product Attribute | Attribute Value | |
|---|---|---|
| Rise Time | 8ns | |
| Vgs (Max) | ±20V | |
| Fall Time (Typ) | 5 ns | |
| Continuous Drain Current (ID) | 4.5A | |
| JEDEC-95 Code | TO-220AB | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain to Source Breakdown Voltage | 500V | |
| Pulsed Drain Current-Max (IDM) | 18A | |
| Avalanche Energy Rating (Eas) | 290 mJ | |
| Feedback Cap-Max (Crss) | 55 pF | |
| Turn On Time-Max (ton) | 102ns | |
| Radiation Hardening | No | |
| RoHS Status | Non-RoHS Compliant | |
| Lead Free | Contains Lead |
IRF830 Test Circuits
Figure 1: Unclamped Inductive Load Test Circuit
Figure 2: Switching Times Test Circuits For Resistive Load
Figure 3: Test Circuit For Inductive Load Switching And Diode Recovery Times
Where to use IRF830
IRF830 can be used in many settings. For example, it can be used in high voltage circuits, high speed applications, motor drivers and in any general purpose applications which fall under its ratings. It can also be used at the output of ICs, Microcontroller and electronic platforms as described above. Also, it can be used to build high power audio amplifiers.
IRF830 Applications
-
High current, high speed switching
-
Swith mode power supplies (smps)
-
DC-AC converters for welding equipment and uninterruptible power supplies and motor driver
-
Switching high power devices
-
Inverter Circuits
-
DC-DC Converters
-
Control speed of motors
-
LED dimmers or flashers
IRF830 Package
IRF830 Package Outline
IRF830 Mechanical Data
IRF830 Manufacturer
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
Datasheet PDF
Download datasheets and manufacturer documentation for STMicroelectronics IRF830.
IRF830 Documents
IRF830 Documents
Download datasheets and manufacturer documentation for IRF830
Frequently Asked Questions
1.What is IRF830?
The IRF830 is a fast switching high voltage N-Channel MOSFET with a low on-state resistance. The MOSFET has a maximum drain to source voltage of 500V. The MOSFET will have a drain to source internal resistance of 1.5Ω when triggered with 10V gate voltage.
2.What is IRF in Mosfet?
It is basically an N-Channel power Metal Oxide Silicon Field Effect Transistor (MOSFET) and operates in enhancement mode.
3.What is an N-channel Mosfet?
An N-Channel MOSFET is a type of MOSFET in which the channel of the MOSFET is composed of a majority of electrons as current carriers. When the MOSFET is activated and is on, the majority of the current flowing are electrons moving through the channel.
4.I'm working on a project and I need to switch IRF830 N-Channel MOSFET at roughly 100KHz as low-side. So, how much output current I need to drive this MOSFET 4 in parallel?
First, gate drive current is not typically chosen to just meet the capacitance of the MOSFET. Instead the drive is selected to move the gate voltage as quickly as necessary to maximize the switching efficiency of the circuit. This is why even small gate drivers are specified to deliver a few Amps (in a brief pulse).
Now let me answer your question. The datasheet shows Qg = 38 nC with Vgs ending at 10 V and Vds starting at 400 V. Of this 5 nC is Qgs and 22 nC is Qgd. Roughly speaking the gate driver has to drive 2 capacitors. One between Gate and Drain and one between Gate and Source. I tried a simple diagram below.
Vdrive --| Cgd |-- Drain
Vdrive --| Cgs |-- Source
The capacitance is junction and oxide capacitance so it is not constant but changes significantly -- Cgd especially -- with voltage. This is why both gate charge and gate capacitance are given.
Assume the drive is 10 V then 5 nC is put onto the gate 100 k times a second = 5 uA. For the gate charge only. The gate to drain capacitance dominates but the drain is probably not a fixed voltage so this an calculation is an estimate. With the scant information provided it's a wild guess. But 38 nC * 100 kHz = 3.8 mA.
Of course scale all this up by 4 when you put 4 FETs in parallel.
5.How to safely long run IRF830 in a Circuit?
For long life performance it is suggested to not use this transistor on its max limits. Using a component on its max limits can provide stress on a component and may result internal and outer damage of the component. Therefore we suggest using a component at least 20% below from its maximum ratings. The max drains to source current is 4.5A, therefore do not drive load more than 3.6A. The max drain to source voltage is 500V therefore d not drive load of more than 400V and always store and operate the transistor in temperature above -55 degree Celsius and below +150 degree Celsius.
FAQ
1.What is IRF830?
The IRF830 is a fast switching high voltage N-Channel MOSFET with a low on-state resistance. The MOSFET has a maximum drain to source voltage of 500V. The MOSFET will have a drain to source internal resistance of 1.5Ω when triggered with 10V gate voltage.
2.What is IRF in Mosfet?
It is basically an N-Channel power Metal Oxide Silicon Field Effect Transistor (MOSFET) and operates in enhancement mode.
3.What is an N-channel Mosfet?
An N-Channel MOSFET is a type of MOSFET in which the channel of the MOSFET is composed of a majority of electrons as current carriers. When the MOSFET is activated and is on, the majority of the current flowing are electrons moving through the channel.
4.I'm working on a project and I need to switch IRF830 N-Channel MOSFET at roughly 100KHz as low-side. So, how much output current I need to drive this MOSFET 4 in parallel?
First, gate drive current is not typically chosen to just meet the capacitance of the MOSFET. Instead the drive is selected to move the gate voltage as quickly as necessary to maximize the switching efficiency of the circuit. This is why even small gate drivers are specified to deliver a few Amps (in a brief pulse).
Now let me answer your question. The datasheet shows Qg = 38 nC with Vgs ending at 10 V and Vds starting at 400 V. Of this 5 nC is Qgs and 22 nC is Qgd. Roughly speaking the gate driver has to drive 2 capacitors. One between Gate and Drain and one between Gate and Source. I tried a simple diagram below.
Vdrive --| Cgd |-- Drain
Vdrive --| Cgs |-- Source
The capacitance is junction and oxide capacitance so it is not constant but changes significantly -- Cgd especially -- with voltage. This is why both gate charge and gate capacitance are given.
Assume the drive is 10 V then 5 nC is put onto the gate 100 k times a second = 5 uA. For the gate charge only. The gate to drain capacitance dominates but the drain is probably not a fixed voltage so this an calculation is an estimate. With the scant information provided it's a wild guess. But 38 nC * 100 kHz = 3.8 mA.
Of course scale all this up by 4 when you put 4 FETs in parallel.
5.How to safely long run IRF830 in a Circuit?
For long life performance it is suggested to not use this transistor on its max limits. Using a component on its max limits can provide stress on a component and may result internal and outer damage of the component. Therefore we suggest using a component at least 20% below from its maximum ratings. The max drains to source current is 4.5A, therefore do not drive load more than 3.6A. The max drain to source voltage is 500V therefore d not drive load of more than 400V and always store and operate the transistor in temperature above -55 degree Celsius and below +150 degree Celsius.
TAGS
Comments