MOSFET N-CH 500V 8A TO-220
The IRF840 is an N-Channel Power MOSFET that can switch loads up to 500V. This article covers its pinout, alternative, test circuit and more details about IRF840.
IRF840 N-Channel Power MOSFET: Pinout, Alternative, Test Circuit
MOSFET N-CH 500V 8A TO-220 The IRF840 is an N-Channel Power MOSFET that can switch loads up to 500V.
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Aug 1, 2021
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IRF840
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IRF840 Description
The IRF840 is an N-Channel Power MOSFET that can switch loads up to 500V. The Mosfet could switch loads that consume up to 8A, which can be turned on by providing a gate threshold voltage of 10V across the Gate and Source pin. Since the MOSFET is for switching high current high voltage loads it has a relatively high gate voltage, hence cannot be used directly with an I/O pin of a CPU.
IRF840 Pinout
IRF840 2D Model
Symbol
Footprint
Features
■ Typical rds(on) = 0.75 Ω
■ Extremely high DV/DT capability
■ 100% avalanche tested
■ New high voltage benchmark
■ Gate charge minimized
Specifications
STMicroelectronics IRF840 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics IRF840.
IRF840 Tech Specifications
IRF840 Tech Specifications
STMicroelectronics IRF840 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics IRF840.
| Product Attribute | Attribute Value | |
|---|---|---|
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 | |
| Surface Mount | NO | |
| Number of Pins | 3Pins | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 8A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 125W Tc | |
| Voltage - Gate Threshold (Vgs(th)) (Max) @ Id | 4V @ 250μA | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tube | |
| Series | PowerMESH™ II | |
| JESD-609 Code | e3 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Product Attribute | Attribute Value | |
|---|---|---|
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Matte Tin (Sn) | |
| Additional Feature | AVALANCHE RATED | |
| HTS Code | 8541.29.00.95 | |
| Terminal Position | SINGLE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Base Part Number | IRF8 | |
| JESD-30 Code | R-PSFM-T3 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 850m Ω @ 3.5A, 10V |
| Product Attribute | Attribute Value | |
|---|---|---|
| Input Capacitance (Ciss) (Max) @ Vds | 832pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 39nC @ 10V | |
| Drain to Source Voltage (Vdss) | 500V | |
| Vgs (Max) | ±20V | |
| JEDEC-95 Code | TO-220AB | |
| Drain Current-Max (Abs) (ID) | 8A | |
| Drain-source On Resistance-Max | 0.85Ohm | |
| Pulsed Drain Current-Max (IDM) | 32A | |
| DS Breakdown Voltage-Min | 500V | |
| Avalanche Energy Rating (Eas) | 520 mJ | |
| Feedback Cap-Max (Crss) | 110 pF | |
| Turn Off Time-Max (toff) | 125ns | |
| Turn On Time-Max (ton) | 93ns | |
| REACH SVHC | not_compliant | |
| RoHS Status | Non-RoHS Compliant |
Alternatives for IRF840
IRF840 Application
-
High current, high-speed switching
-
Switch-mode power supplies(SMPS)
-
DC-AC converters for welding equipment and uninterruptible
-
Power supplies and motor drives
IRF840 Test Circuit
Unclamped Inductive Load Test Circuit
Switching Times Test Circuit For Resistive Load
Gate Charge test Circuit
Test Circuit For Inductive Load Switching And Diode Recovery Times
IRF840 Package
IRF840 Manufacturer
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivalled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
Datasheet PDF
Download datasheets and manufacturer documentation for STMicroelectronics IRF840.
IRF840 Documents
IRF840 Documents
Download datasheets and manufacturer documentation for IRF840
Frequently Asked Questions
What is IRF840?
The IRF840 is an N-Channel Power MOSFET which can switch loads upto 500V. The Mosfet could switch loads that consume up to 8A, it can be turned on by providing a gate threshold voltage of 10V across the Gate and Source pin. Hence this MOSFET cannot be used in applications where high switching efficiency is required.
How many drain S is are there in a IRF840?
The IRF840 is an n-channel power MOSFET that supports loads up to 8A and 500V. It is a fast switching and high voltage device that requires 10V across the gate terminal to initiate the conduction process. This IRF840 MOSFET is a three-terminal device made of gate (G) drain (D) and source (S) terminals.
What is an N-channel Mosfet?
An N-Channel MOSFET is a type of MOSFET in which the channel of the MOSFET is composed of a majority of electrons as current carriers. When the MOSFET is activated and is on, the majority of the current flowing are electrons moving through the channel. An enhancement-type MOSFET is an opposite.
FAQ
What is IRF840?
The IRF840 is an N-Channel Power MOSFET which can switch loads upto 500V. The Mosfet could switch loads that consume up to 8A, it can be turned on by providing a gate threshold voltage of 10V across the Gate and Source pin. Hence this MOSFET cannot be used in applications where high switching efficiency is required.
How many drain S is are there in a IRF840?
The IRF840 is an n-channel power MOSFET that supports loads up to 8A and 500V. It is a fast switching and high voltage device that requires 10V across the gate terminal to initiate the conduction process. This IRF840 MOSFET is a three-terminal device made of gate (G) drain (D) and source (S) terminals.
What is an N-channel Mosfet?
An N-Channel MOSFET is a type of MOSFET in which the channel of the MOSFET is composed of a majority of electrons as current carriers. When the MOSFET is activated and is on, the majority of the current flowing are electrons moving through the channel. An enhancement-type MOSFET is an opposite.
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