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IRF9530 Power MOSFET: Pinout, Alternatives and Datasheet

MOSFET P-CH 100V 12A TO-220AB Hi, fellas. Welcome back to the post today. IRF9530 is a P channel MOSFET that can be used for a wide variety of switching and amplification purposes.

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Sep 2, 2021

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All NEW Mosfet (IRF9530,530), 250w PRO amplifier kit

 

MOSFET P-CH 100V 12A TO-220AB

Hi, fellas. Welcome back to the post today. IRF9530 is a P channel MOSFET that can be used for a wide variety of switching and amplification purposes. This article mainly introduce pinout, alternatives, datasheet, and other detailed information about Vishay Siliconix IRF9530.

IRF9530

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IRF9530 Description

IRF9530 is a new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. 

 

This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme DV/DT rates and higher avalanche energy. 

 

It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. It can be used for a wide variety of switching and amplification purposes. 

 

The transistor is capable of high-speed switching and it is capable to deliver switching speed in nanoseconds due to which the designer can use it in applications where high-speed switching is crucial. The maximum load this transistor is capable to drive is -12A and -48A in pulse mode with the max voltage of -100V. 

 

IRF9530 also has low gate driving requirements and low input impedance due to which it can be directly operated from the output of ICs, microcontrollers, and electronic platforms like Arduino, Raspberry Pi, etc. 

 

Moreover, the transistor also has low RDS(ON) which makes it power efficient and makes it ideal to use in portable and battery-operated applications.

IRF9530 Pinout

IRF9530 CAD Model

Symbol

Footprint

IRF9530 Features

●Available in TO-220, TO-220AB, And Other Packages

●Transistor Type: P Channel

●Voltage Applied From Drain to Source: -100V(Maximum)

●Gate to Source Voltage Should Be: ±20V(Maximum)

●Continues Drain Current is: -12A(Maximum)

●Drain to Source Resistance in ON State: 0.300 Ohms

●Pulsed Drain Current is: -48A(Maximum)

●Power Dissipation is: 88W(Maximum)

●Storage & Operating Temperature Should Be: -55 to +150 Centigrade (Maximum)

●Dynamic DV/DT Rating

●Repetitive 100% Avalanche Rated

●Fast Switching

●Ease of Paralleling

●Simple Drive Requirements

●New High Voltage Benchmark

Specifications

Vishay Siliconix IRF9530 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRF9530.

IRF9530 Tech Specifications

Vishay Siliconix IRF9530 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRF9530.

Product Attribute Attribute Value
MountThrough Hole
Mounting TypeThrough Hole
Package / CaseTO-220-3
Number of Pins3Pins
Supplier Device PackageTO-220AB
Weight6.000006g
Current - Continuous Drain (Id) @ 25℃12A Tc
Drive Voltage (Max Rds On, Min Rds On)10V
Number of Elements1 Element
Power Dissipation (Max)88W Tc
Turn Off Delay Time31 ns
Operating Temperature-55°C~175°C TJ
PackagingTube
Published2011
Part StatusObsolete
Product Attribute Attribute Value
Moisture Sensitivity Level (MSL)1 (Unlimited)
Max Operating Temperature175°C
Min Operating Temperature-55°C
Voltage - Rated DC-100V
Current Rating-12A
Number of Channels1Channel
Element ConfigurationSingle
Power Dissipation88W
Turn On Delay Time12 ns
FET TypeP-Channel
Rds On (Max) @ Id, Vgs300mOhm @ 7.2A, 10V
Vgs(th) (Max) @ Id4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds860pF @ 25V
Gate Charge (Qg) (Max) @ Vgs38nC @ 10V
Rise Time52ns
Product Attribute Attribute Value
Drain to Source Voltage (Vdss)100V
Vgs (Max)±20V
Fall Time (Typ)39 ns
Continuous Drain Current (ID)12A
Gate to Source Voltage (Vgs)20V
Drain to Source Breakdown Voltage-100V
Input Capacitance860pF
Drain to Source Resistance300mOhm
Rds On Max300 mΩ
Height9.01mm
Length10.41mm
Width4.7mm
Radiation HardeningNo
RoHS StatusNon-RoHS Compliant
Lead FreeContains Lead
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IRF9530 Alternatives

Part Number Description Manufacturer
IRF9530TRANSISTORS Power Field-Effect Transistor, 12A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, International Rectifier
IRF9530NPBFTRANSISTORS Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD-FREE PACKAGE-3 International Rectifier
IRF9530NTRANSISTORS Power Field-Effect Transistor, 13A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Infineon Technologies AG
IRF9530PBFTRANSISTORS Power Field-Effect Transistor, 12A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3 Vishay Intertechnology
IRF9530NHRTRANSISTORS Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN International Rectifier

Where to use IRF9530?

IRF9530 MOSFET can be used in a wide variety of general-purpose switching and amplification purposes. Other than that it can also perform well in high-speed switching applications. Furthermore, it can also be used for high-power audio amplification purposes.

 

IRF9530 Applications

-Used in Uninterrupted Power Supplies

-Used in Motor Driver Applications

-Used in High-Speed Switching Applications

-Used in Switching Regulators

-Used in Relay Driving Applications

-Used in Battery Charger Circuits

IRF9530 Manufacturer

Vishay Intertechnology, Inc. is an American manufacturer of discrete semiconductors and passive electronic components founded by Polish-born businessman Felix Zandman. Vishay has manufacturing plants in Israel, Asia, Europe, and the Americas where it produces rectifiers, diodes, MOSFETs, optoelectronics, selected integrated circuits, resistors, capacitors, and inductors.

 

Vishay is one of the world's foremost manufacturers of power MOSFETs.They have a wide range of power electronic applications, including portable information appliances, internet communications infrastructure, power integrated circuits, cell phones, and notebook computers.

 

Datasheet PDF

IRF9530 Documents

Download datasheets and manufacturer documentation for IRF9530

Datasheets
IRF9530PBF
Other Related Documents
Packaging Information
PCN Obsolescence/ EOL
SIL-018-2015-Rev-0 20/May/2015

Frequently Asked Questions

1.How much voltage is on for IRF9530?
The turn-on voltage of IRF9530 is between -2 and 4v. IRF9530N is a PMOS tube, and the conduction condition of the P-channel enhancement type field effect tube is that the gate potential is lower than the drain potential.
2.What is the role of multiple FET IRF9530 in parallel?
Mainly the function of flow expansion and automatic flow sharing.
3.How to safely long run IRF9530 in a circuit?
we suggest using it at least 20% below its maximum ratings, therefore it will also apply to IRF9530 MOSFET. The maximum continuous drain current is -12A therefore don’t drive a load of more than 9.6A. The maximum drain to source voltage is -100V, therefore, don’t drive a load of more than 80V, use a proper heatsink with the transistor, and always store or operate this transistor at a temperature above -55 degree Celsius and below +150 degrees celsius.
FAQ
1.How much voltage is on for IRF9530?
The turn-on voltage of IRF9530 is between -2 and 4v. IRF9530N is a PMOS tube, and the conduction condition of the P-channel enhancement type field effect tube is that the gate potential is lower than the drain potential.
2.What is the role of multiple FET IRF9530 in parallel?
Mainly the function of flow expansion and automatic flow sharing.
3.How to safely long run IRF9530 in a circuit?
we suggest using it at least 20% below its maximum ratings, therefore it will also apply to IRF9530 MOSFET. The maximum continuous drain current is -12A therefore don’t drive a load of more than 9.6A. The maximum drain to source voltage is -100V, therefore, don’t drive a load of more than 80V, use a proper heatsink with the transistor, and always store or operate this transistor at a temperature above -55 degree Celsius and below +150 degrees celsius.

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