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IRF9640 P-Channel MOSFET: Pinout, Datasheet, Equivalent, and Circuit

MOSFET P-CH 200V 11A TO-220AB The IRF9640 is a P-Channel enhancement mode silicon-gate power field-effect transistor.

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Aug 27, 2021

Borg Whitehead

P Channel MOSFET Switch Circuit

 

MOSFET P-CH 200V 11A TO-220AB

The IRF9640 is a P-Channel enhancement mode silicon-gate power field-effect transistor.

IRF9640

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IRF9640 Description

The IRF9640 is a P-Channel enhancement mode silicon-gate power field-effect transistor. It is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. The IRF9640 is designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and as drivers for other high-power switching devices. The high input impedance allows the IRF9640 to be operated directly from integrated circuits.

IRF9640 Pinout

IRF9640 CAD Model

Symbol

IRF9640 Symbol

 

Footprint

 

IRF9640 Footprint

 

3D Model

 

IRF9640 3D Model

IRF9640 Features

  • Transistor Type: P-Channel

  • Package Type: TO-220

  • Max Drain to Source Voltage: -200 V

  • Max Gate to Source Voltage: ±20 V

  • Max Continues Drain Current: -11 A

  • Drain to Source Resistance in ON State: 500 mΩ

  • Max Pulsed Drain Current: -44 A

  • Max Power Dissipation: 125W

  • Storage & Operating Temperature: -55 to +150 Centigrade

IRF9640 Advantages

  • Dynamic dV/dt Rating

  • Repetitive Avalanche Rated

  • P-Channel

  • Fast Switching

  • Ease of Paralleling

  • Simple Drive Requirements

  • Compliant to RoHS Directive 2002/95/EC

Specifications

Vishay Siliconix IRF9640 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRF9640.

IRF9640 Tech Specifications

Vishay Siliconix IRF9640 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRF9640.

Product Attribute Attribute Value
MountThrough Hole
Mounting TypeThrough Hole
Package / CaseTO-220-3
Number of Pins3Pins
Supplier Device PackageTO-220AB
Weight6.000006g
Current - Continuous Drain (Id) @ 25℃11A Tc
Drive Voltage (Max Rds On, Min Rds On)10V
Number of Elements1 Element
Power Dissipation (Max)125W Tc
Turn Off Delay Time39 ns
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id4V @ 250μA
Operating Temperature-55°C~150°C TJ
PackagingTube
Published2011
Product Attribute Attribute Value
Part StatusObsolete
Moisture Sensitivity Level (MSL)1 (Unlimited)
Max Operating Temperature150°C
Min Operating Temperature-55°C
Voltage - Rated DC-200V
Current Rating-11A
Number of Channels1Channel
Element ConfigurationSingle
Power Dissipation125W
Turn On Delay Time13 ns
FET TypeP-Channel
Rds On (Max) @ Id, Vgs500mOhm @ 6.6A, 10V
Input Capacitance (Ciss) (Max) @ Vds1200pF @ 25V
Gate Charge (Qg) (Max) @ Vgs44nC @ 10V
Rise Time43ns
Product Attribute Attribute Value
Drain to Source Voltage (Vdss)200V
Vgs (Max)±20V
Fall Time (Typ)38 ns
Continuous Drain Current (ID)11A
Gate to Source Voltage (Vgs)20V
Input Capacitance1.2nF
Drain to Source Resistance500mOhm
Rds On Max500 mΩ
Height9.01mm
Length10.41mm
Width4.7mm
RoHS StatusNon-RoHS Compliant
Lead FreeContains Lead
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IRF9640 Test Circuits

IRF9640 Unclamped Energy Test Circuit and Waveforms

 

IRF9640 Switching Time Test Circuit and Waveforms

 

IRF9640 Gate Charge Test Circuit and Waveforms

IRF9640 Alternatives

IRF9640 Equivalents

2SJ513, CEP14P20, IRF9640PBF, 9640S, IRFP9240, MTW14P20, IRF044, IRF044SMD, IRF054, IRF054SMD, IRF100B201, IRF100B202

Please check the pin configuration and parameters before replacing them in your circuit.

 

Where to use IRF9640

The IRF9640 is a P-Channel MOSFET manufactured in the TO-220 package. The continuous drain current of the IRF9640 is -11A therefore you can drive a maximum load of -11A through the MOSFET with a maximum load voltage of -200V. The IRF9640 can be used in a variety of switching and amplification applications. It is capable of delivering fast switching speed hence can be used in applications where fast switching is needed. With a drain to source resistance as low as 500 mΩ, less power is wasted hence improves efficiency. Moreover, the IRF9640 has low driving requirements which makes it capable of operating directly from ICs, microcontrollers, and electronic platforms such as Arduino.

 

IRF9640 Applications

  • Switching Regulators

  • Switching Converters

  • Uninterrupted Power Supplies

  • Battery Chargers

  • Solar Applications

  • Motor Drivers

  • Relay Drivers

 

IRF9640 Package

IRF9640 Package Outline

 

IRF9640 Mechanical Data

IRF9640 Manufacturer

Vishay, through its Siliconix subsidiary, leads the industry in the development of power semiconductor products that improve the efficiency of power management circuitry in end products while reducing space requirements. As the world's number-one brand of low-voltage power MOSFETs (metal-oxide-semiconductor field-effect transistors), Vishay Siliconix products play a key role in making handheld and portable electronic systems operate more efficiently from smaller and lighter battery packs.

 

Datasheet PDF

Download datasheets and manufacturer documentation for Vishay Siliconix IRF9640.

IRF9640 Documents

Download datasheets and manufacturer documentation for IRF9640

Other Related Documents
Packaging Information
PCN Obsolescence/ EOL
SIL-018-2015-Rev-0 20/May/2015

Frequently Asked Questions

1.What is IRF9640?
The IRF9640 is a P-Channel enhancement mode silicon-gate power field-effect transistor. It is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.
2.How to safely long run IRF9640 in a circuit?
For long-term performance with this device use it 20% below its maximum ratings. The maximum continuous drain current -11A, therefore, does not drive a load of more than -8.8A. The maximum drain to source voltage is -200V therefore do not drive a load of more than -160V, use a suitable heatsink with this transistor and always store or operate the transistor at a temperature above -55 degrees Celsius and below +150 degrees Celsius.
3.What is P-channel MOSFET used for?
P-channel MOSFETs are often used for load switching. The simplicity of P-channel solutions on the high side makes them equally attractive for applications such as Low-Voltage Drives and non-isolated Point of Loads in systems where space is at a premium.
4.What is P-channel enhancement MOSFET?
P-Channel MOSFET is a classification of Metal Oxide Semiconductor Device. This consists of the n-substrate in the middle with a light doping concentration. These are the three terminals devices. It possesses uni-polar characteristics because its operation is dependent on the majority of the charge carriers.
FAQ
1.What is IRF9640?
The IRF9640 is a P-Channel enhancement mode silicon-gate power field-effect transistor. It is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.
2.How to safely long run IRF9640 in a circuit?
For long-term performance with this device use it 20% below its maximum ratings. The maximum continuous drain current -11A, therefore, does not drive a load of more than -8.8A. The maximum drain to source voltage is -200V therefore do not drive a load of more than -160V, use a suitable heatsink with this transistor and always store or operate the transistor at a temperature above -55 degrees Celsius and below +150 degrees Celsius.
3.What is P-channel MOSFET used for?
P-channel MOSFETs are often used for load switching. The simplicity of P-channel solutions on the high side makes them equally attractive for applications such as Low-Voltage Drives and non-isolated Point of Loads in systems where space is at a premium.
4.What is P-channel enhancement MOSFET?
P-Channel MOSFET is a classification of Metal Oxide Semiconductor Device. This consists of the n-substrate in the middle with a light doping concentration. These are the three terminals devices. It possesses uni-polar characteristics because its operation is dependent on the majority of the charge carriers.

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