Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 80A TO-220AB The IRFB3607 is a TO-220 packaging 75V Single N-Channel StrongIRFET? Power MOSFET.
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Nov 17, 2021
Asa Arnold
Review of SZBK07 300W 20A Buck converter 1.2V to 36V with constant Current
Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 80A TO-220AB
The IRFB3607 is a TO-220 packaging 75V Single N-Channel StrongIRFET™ Power MOSFET. This article mainly introduces circuits, pinout, datasheet and other detailed information about Infineon Technologies IRFB3607.
IRFB3607PBF
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.48609 | $0.49 |
| 10+ | $0.45857 | $4.59 |
| 100+ | $0.43262 | $43.26 |
| 500+ | $0.40813 | $204.07 |
| 1000+ | $0.38503 | $385.03 |
The IRFB3607 is a TO-220 packaging 75V Single N-Channel StrongIRFET™ Power MOSFET. StrongIRFET™ power MOSFETs are designed to have a low RDS(on) and a high current capacity. The devices are well-suited to low-frequency applications that demand high performance and durability. DC motors, battery management systems, inverters, and DC-DC converters are among the applications covered by the comprehensive portfolio.
Footprint
3D Model
• Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
• Fully Characterized Capacitance and Avalanche SOA
• Enhanced Body Diode dV/dt and dI/dt Capability
• Industry Standard Through-hole Power Package
• High-current Rating
• Product Qualification according to JEDEC Standard
• Silicon Optimized for Applications Switching Below <100 kHz
• Softer Body-diode Compared to Previous Silicon Generation
• Wide Portfolio Available
Infineon Technologies IRFB3607PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFB3607PBF.
Infineon Technologies IRFB3607PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFB3607PBF.
| Product Attribute | Attribute Value | |
|---|---|---|
| Factory Lead Time | 12 Weeks | |
| Contact Plating | Tin | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 | |
| Number of Pins | 3Pins | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 80A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 140W Tc | |
| Turn Off Delay Time | 43 ns | |
| Operating Temperature | -55°C~175°C TJ | |
| Packaging | Tube | |
| Series | HEXFET® | |
| Published | 2008 | |
| Part Status | Active |
| Product Attribute | Attribute Value | |
|---|---|---|
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| Termination | Through Hole | |
| ECCN Code | EAR99 | |
| Resistance | 9MOhm | |
| Element Configuration | Single | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 140W | |
| Case Connection | DRAIN | |
| Turn On Delay Time | 16 ns | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 9m Ω @ 46A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 100μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 3070pF @ 50V | |
| Gate Charge (Qg) (Max) @ Vgs | 84nC @ 10V | |
| Rise Time | 110ns |
| Product Attribute | Attribute Value | |
|---|---|---|
| Vgs (Max) | ±20V | |
| Fall Time (Typ) | 96 ns | |
| Continuous Drain Current (ID) | 80A | |
| Threshold Voltage | 4V | |
| JEDEC-95 Code | TO-220AB | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain to Source Breakdown Voltage | 75V | |
| Dual Supply Voltage | 75V | |
| Recovery Time | 50 ns | |
| Nominal Vgs | 4 V | |
| Height | 9.017mm | |
| Length | 10.6426mm | |
| Width | 4.82mm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
• Standard pinout allows for drop-in replacement
• High-current carrying capability package
• Industry-standard qualification level
• High performance in low-frequency applications
• Increased power density
• Provides designers flexibility in selecting the most optimal device for their application
IRF1407, IRF1607, IRF2907Z, IRF3808, IRFB3077, IRFB3077G, IRFB3207, IRFB3207Z, IRFB3207ZG, IRFB3307, IRFB3307Z, IRFB3307ZG, IRFB3607G, IRFB4110, IRFB4110G, IRFB4310, IRFB4310G, IRFB4310Z, IRFB4310ZG, IRFB4410Z, IRFB4410ZG
| Part Number | Description | Manufacturer |
| BUK7609-75A,118TRANSISTORS | N-channel TrenchMOS standard level FET@en-us D2PAK 3-Pin | Nexperia |
| IRFR3607TRRPBFTRANSISTORS | Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | Infineon Technologies AG |
| BUK769R6-80E,118TRANSISTORS | N-channel TrenchMOS standard level FET@en-us D2PAK 3-Pin | Nexperia |
| 934058279127TRANSISTORS | Power Field-Effect Transistor | Nexperia |
| BUK7609-75ATRANSISTORS | Power Field-Effect Transistor | Nexperia |
| IRFU3607PBFTRANSISTORS | Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE, PLASTIC, IPAK-3 | International Rectifier |
| IRFR3607TRPBFTRANSISTORS | Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | Infineon Technologies AG |
| IRFR3607TRLTRANSISTORS | Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 | International Rectifier |
| IRFR3607TRANSISTORS | Power Field-Effect Transistor, 56A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 | Infineon Technologies AG |
| AUIRFR3607TRRTRANSISTORS | Power Field-Effect Transistor, 56A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | International Rectifier |
• High-Efficiency Synchronous Rectification in SMPS
• Uninterruptible Power Supply
• High-Speed Power Switching
• Hard Switched and High-Frequency Circuits
• Battery powered applications
• Power tools
• DC motor drives
• Light Electric Vehicles (LEV)
• SMPS
Package
Infineon Technologies AG is a German semiconductor manufacturer that was founded in 1999 after the semiconductor businesses of its previous parent company, Siemens AG, were spun off. Infineon employs around 46,665 employees and is one of the world's top 10 semiconductor manufacturers. It is the market leader in automotive and power semiconductors. Infineon purchased Cypress in April 2020.
Infineon sells semiconductors and systems to the automotive, industrial, and multimarket segments, as well as chip cards and security devices. Infineon has subsidiaries in Milpitas, California, Singapore, and Tokyo, Japan, respectively, in the United States and Asia-Pacific.
Infineon has offices all around Europe, including one in Dresden. Warstein, Germany, Villach and Graz, Austria, Cegléd, Hungary, and Italy are all home to Infineon's high-power division. It also has fabrication facilities in Singapore, Malaysia, Indonesia, and China, as well as research and development centers in France, Singapore, Romania, Taiwan, the United Kingdom, and India. A Shared Service Center is also located in Maia, Portugal.
Download datasheets and manufacturer documentation for IRFB3607PBF
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