MOSFET N-CH 200V 20A TO-247AC IRFP240 is a 20A 200V N-Channel Power MOSFET. This article mainly covers pinout, datasheet, power, equivalent, and other details about IRFP240 power MOSFET. Furthermore, there is a huge range of semiconductors, capacitors, resistors, and ICs in stock. Welcome your RFQ!
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Oct 5, 2021
Larry Ward
100watt mosfet amplifier | mosfet amplifier | mosfet amplifier circuit diagram | irfp240 /irf9240
MOSFET N-CH 200V 20A TO-247AC
IRFP240 is a 20A 200V N-Channel Power MOSFET. This article mainly covers pinout, datasheet, power, equivalent, and other details about IRFP240 power MOSFET. Furthermore, there is a huge range of semiconductors, capacitors, resistors, and ICs in stock. Welcome your RFQ!
IRFP240
IRFP240 20A 200V N-Channel Power MOSFET is an advanced line of power MOSFET transistors. It is the third generation Power MOSFETs from Vishay that provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices.
| Pin No | Pin Name |
| 1 | Gate |
| 2 | Drain |
| 3 | Source |
IRFP240 Symbol
IRFP240 Footprint
IRFP240 3D Model
Vishay Siliconix IRFP240 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFP240.
| Product Attribute | Attribute Value | |
|---|---|---|
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 | |
| Number of Pins | 3Pins | |
| Supplier Device Package | TO-247-3 | |
| Weight | 38.000013g | |
| Current - Continuous Drain (Id) @ 25℃ | 20A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Power Dissipation (Max) | 150W Tc | |
| Turn Off Delay Time | 45 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tube | |
| Published | 2016 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Product Attribute | Attribute Value | |
|---|---|---|
| Max Operating Temperature | 150°C | |
| Min Operating Temperature | -55°C | |
| Voltage - Rated DC | 200V | |
| Current Rating | 20A | |
| Number of Channels | 1Channel | |
| Element Configuration | Single | |
| Power Dissipation | 150W | |
| Turn On Delay Time | 14 ns | |
| FET Type | N-Channel | |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 12A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 1300pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 70nC @ 10V | |
| Rise Time | 51ns | |
| Drain to Source Voltage (Vdss) | 200V |
| Product Attribute | Attribute Value | |
|---|---|---|
| Vgs (Max) | ±20V | |
| Fall Time (Typ) | 36 ns | |
| Continuous Drain Current (ID) | 20A | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain to Source Breakdown Voltage | 200V | |
| Input Capacitance | 1.3nF | |
| Drain to Source Resistance | 180mOhm | |
| Rds On Max | 180 mΩ | |
| Height | 20.7mm | |
| Length | 15.87mm | |
| Width | 5.31mm | |
| Radiation Hardening | No | |
| RoHS Status | Non-RoHS Compliant | |
| Lead Free | Contains Lead |
20A, 200V
rDS(ON) = 0.180Ω
Single Pulse Avalanche Energy Rated
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
Dynamic DV/DT Rating
Repetitive Avalanche Rated
Isolated Central Mounting Hole
Fast Switching
Ease of Paralleling
Simple Drive Requirements
Compliant to RoHS Directive 2002/95/EC
IRF034, IRF044, IRF044SMD, IRF054, IRF054SMD, IRF100B201
Inverters
Choppers
Switching Power Supplies
Motor Controls
Audio Amplifiers
High Energy Pulse Circuits
The metal oxide field-effect transistor, or Mosfet, is a type of field-effect transistor made of metal oxide. Typically, it is employed as a switch or an amplifier in one of two modes. Gate, drain, and source are the three exterior terminals. As a result, it can be employed in a variety of combinations. MOSFETs must be biased in such a way that the bulk of carriers flow from source to drain if they are to be used as amplifiers.
MOSFET Power Amplifier circuit
Capacitor C8 is the input decoupling capacitor in the MOSFET Power Amplifier circuit. The input current to transistor Q1 is limited by R20. The gain is controlled by the resistors R3 and R2. R1 is used to modify the output voltage, whereas R2 is used to adjust the input voltage. The class AB power amplifier is made up of Q7 and Q8 transistors. The fuses are employed in the circuit to provide a level of safety.
Vishay, an important partner of Digi-Key, serves as a globally recognized manufacturer famous for its discrete semiconductors and passive electronic components. Their discrete semiconductors include diodes, MOSFETs, optoelectronics, etc and their passive components include resistors, inductors, capacitors, etc. These products are widely used for almost all kinds of electronic devices and equipment in the fields of industrial, computing, automotive, telecommunications, military, aerospace, and medical.
Download datasheets and manufacturer documentation for IRFP240
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