Transistors - FETs, MOSFETs - Single Mosfet, Power; N-ch; Vdss 200V; Rds(on) 0.04 Ohm; Id 50A; TO-247AC; Pd 300W; Vgs +/-20V IRFP260N is an N-Channel Power MOSFET. This article is going to explain details about IRFP260N MOSFET.
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Nov 17, 2021
Tracy Noah
Mosfet Powerful Voltage Regulator IRFP260N Mosfet
Transistors - FETs, MOSFETs - Single Mosfet, Power; N-ch; Vdss 200V; Rds(on) 0.04 Ohm; Id 50A; TO-247AC; Pd 300W; Vgs /-20V
IRFP260N is an N-Channel Power MOSFET. This article is going to explain details about IRFP260N MOSFET.
IRFP260NPBF
IRFP26N is a 50A 200V N-Channel Power MOSFET that is advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFET s are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
IRFP260N Pinout
| Pin No | Pin Name |
| 1 | Emitter |
| 2 | Base |
| 3 | Collector |
IRFP260N Symbol
IRFP260N Footprint
IRFP260N 3D Model
Infineon Technologies IRFP260NPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFP260NPBF.
Infineon Technologies IRFP260NPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFP260NPBF.
| Product Attribute | Attribute Value | |
|---|---|---|
| Factory Lead Time | 12 Weeks | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 | |
| Number of Pins | 3Pins | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 50A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 300W Tc | |
| Turn Off Delay Time | 55 ns | |
| Operating Temperature | -55°C~175°C TJ | |
| Packaging | Bulk | |
| Series | HEXFET® | |
| Published | 2004 | |
| JESD-609 Code | e3 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| Termination | Through Hole |
| Product Attribute | Attribute Value | |
|---|---|---|
| ECCN Code | EAR99 | |
| Resistance | 40mOhm | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | |
| Voltage - Rated DC | 200V | |
| Peak Reflow Temperature (Cel) | 250 | |
| Current Rating | 50A | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Element Configuration | Single | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 300W | |
| Case Connection | DRAIN | |
| Turn On Delay Time | 17 ns | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 40m Ω @ 28A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 4057pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 234nC @ 10V | |
| Rise Time | 60ns |
| Product Attribute | Attribute Value | |
|---|---|---|
| Vgs (Max) | ±20V | |
| Fall Time (Typ) | 48 ns | |
| Continuous Drain Current (ID) | 50A | |
| Threshold Voltage | 4V | |
| JEDEC-95 Code | TO-247AC | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain to Source Breakdown Voltage | 200V | |
| Pulsed Drain Current-Max (IDM) | 200A | |
| Dual Supply Voltage | 200V | |
| Avalanche Energy Rating (Eas) | 560 mJ | |
| Recovery Time | 402 ns | |
| Nominal Vgs | 4 V | |
| Height | 20.2946mm | |
| Length | 15.875mm | |
| Width | 5.3mm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Contains Lead, Lead Free |
Advanced Process Technology
Dynamic DV/DT Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Ease of Paralleling
Simple Drive Requirements
Type Designator: IRFP260
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
IRFP250N, IRF044, IRF044SMD, IRF054, IRF054SMD, IRF100B201
Switching Voltage Regulators
LED dimmers or flashers
Switching High voltage loads
Commonly used for small signal switching
Low power Analog converters or inverters
IRFP260N is a small signal N -channel MOSFET, MOSFETs are high-current, high-voltage power electronic switches that are similar to transistors. The IRFP260N MOSFET can switch loads that are less than 50V (VDS) and draw less than 200mA. (ID). This MOSFET is packaged in a small TO-247 package and has a 3V threshold voltage, so if you're searching for a little MOSFET to switch a load, this IC might be right for you.
IRFP260N Dimensions
On April 1st, 1999, Siemens Semiconductors became Infineon Technologies. A dynamic more flexible company geared towards success in the competitive, ever-changing world of microelectronics. Infineon is a leading global designer, manufacturer, and supplier of a broad range of semiconductors used in various microelectronic applications. Infineon's product portfolio consists of logic products, including digital, mixed-signal, and analog integrated circuits, as well as discrete semiconductor products.
Download datasheets and manufacturer documentation for IRFP260NPBF
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