MOSFET N-CH 500V 20A TO-247AC Vishay's IRFP460 is an N-channel power MOSFET. This article will unlock more details about IRFP460A. And, Huge range of Semiconductors, Capacitors, Resistors and ICs in stock. Welcome RFQ.
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Sep 18, 2021
Theodore Benson
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MOSFET N-CH 500V 20A TO-247AC
Vishay's IRFP460 is an N-channel power MOSFET. This article will unlock more details about IRFP460A. And, Huge range of Semiconductors, Capacitors, Resistors and ICs in stock. Welcome RFQ.
IRFP460A
IRFP460A Pinout
| Pin Number | Pin Name | Pin Description |
| 1 | Gate | The gate terminal controls conduction between the drain and source |
| 2 | Drain | Current ‘input’, current flows into the MOSFET through this terminal |
| 3 | Source | Current ‘output’, usually connected to ground and current flows out of this terminal, gate voltage applied with respect to this terminal |
Pin Description
Vishay's IRFP460A is an N-channel power MOSFET that offers the best combination of low on-resistance and quick switching. This is a high-voltage device in a TO-247 package with a drain-source breakdown of 500V.
IRFP460A Symbol
IRFP460A Footprint
IRFP460A 3D Model
Vishay Siliconix IRFP460A technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFP460A.
Vishay Siliconix IRFP460A technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFP460A.
| Product Attribute | Attribute Value | |
|---|---|---|
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 | |
| Supplier Device Package | TO-247-3 | |
| Weight | 38.000013g | |
| Current - Continuous Drain (Id) @ 25℃ | 20A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 280W Tc | |
| Turn Off Delay Time | 45 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tube | |
| Published | 2015 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Product Attribute | Attribute Value | |
|---|---|---|
| Max Operating Temperature | 150°C | |
| Min Operating Temperature | -55°C | |
| Voltage - Rated DC | 500V | |
| Current Rating | 20A | |
| Number of Channels | 1Channel | |
| Element Configuration | Single | |
| Power Dissipation | 280W | |
| Turn On Delay Time | 18 ns | |
| FET Type | N-Channel | |
| Rds On (Max) @ Id, Vgs | 270mOhm @ 12A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 3100pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 105nC @ 10V | |
| Rise Time | 55ns | |
| Drain to Source Voltage (Vdss) | 500V |
| Product Attribute | Attribute Value | |
|---|---|---|
| Vgs (Max) | ±30V | |
| Fall Time (Typ) | 39 ns | |
| Continuous Drain Current (ID) | 20A | |
| Gate to Source Voltage (Vgs) | 30V | |
| Drain to Source Breakdown Voltage | 500V | |
| Input Capacitance | 3.1nF | |
| Drain to Source Resistance | 270mOhm | |
| Rds On Max | 270 mΩ | |
| Height | 20.7mm | |
| Length | 15.87mm | |
| Width | 5.31mm | |
| Radiation Hardening | No | |
| RoHS Status | Non-RoHS Compliant | |
| Lead Free | Contains Lead |
• Low Gate Charge Qg Results in Simple Drive Requirement
• Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
• Fully Characterized Capacitance and Avalanche Voltage and Current
• Effective Coss Specified
• Compliant to RoHS Directive 2002/95/EC
• Switch Mode Power Supply (SMPS)
• Uninterruptable Power Supply
• High-Speed Power Switching
The MOSFET is a voltage-controlled device, which means that for it to switch on, a voltage must be present at the gate (with respect to the source). The IRFP460A has a gate threshold voltage of 2V to 4V in this situation, and it only just begins to conduct at this value. The gate voltage must be at least 10V to produce the specified-on resistance of 0.27. The gate voltage has a maximum limit of 20V, after which the gate can be damaged.
In the low-side switching mode, power MOSFETs like the IRFP460A are commonly employed. The MOSFET is utilized to switch an inductive load at a frequency of 10kHz in the interactive simulation linked below. The diode across the inductor prevents the MOSFET from being damaged by voltage spikes. The 10K pulldown resistor ensures that the MOSFET is turned off by default and not unintentionally turned on.
Download datasheets and manufacturer documentation for Vishay Siliconix IRFP460A.
Download datasheets and manufacturer documentation for IRFP460A
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