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HomeCommunitySubjectIRFZ24N Transistor: Datasheet, Pinout, IRFZ24N MOSFET

IRFZ24N Transistor: Datasheet, Pinout, IRFZ24N MOSFET

Transistors - FETs, MOSFETs - Single Transistor MOSFET N Channel 55 Volt 17 Amp 3 Pin 3+ Tab TO-220 AB

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Nov 2, 2021

Norman Wat

DIY Simple & Heavy Bass Amplifier Using IRFZ24N - IRFZ24N amplifier

Transistors - FETs, MOSFETs - Single Transistor MOSFET N Channel 55 Volt 17 Amp 3 Pin 3 Tab TO-220 AB

IRFZ24N is an N channel MOSFET manufactured in the TO-220 package. This post will unlock more details about IRFZ24N. There is a huge range of Semiconductors, Capacitors, Resistors and ICs in stock. Welcome RFQ.

IRFZ24NPBF

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IRFZ24N Pinout

IRFZ24N  Pinout

IRFZ24N CAD Model

IRFZ24N Symbol

IRFZ24N Footprint

IRFZ24N 3D Model

IRFZ24N Description

The IRFZ24N is an N channel MOSFET with a TO-220 package. The transistor can be used in a wide range of general-purpose applications. The MOSFET has a high speed, low resistance, and provides protection against unexpected voltage spikes of up to 2kV transient voltages. The transistor can drive a maximum load of 17A at up to 55V load voltage and can also drive a load of 68A in a single pulse. All of the above characteristics make this MOSFET appropriate for applications like high-speed switching, power supplies, and so on.

IRFZ24N Feature

  • Package Type: TO-220

  • Transistor Type: N Channel

  • Max Voltage Applied From Drain to Source: 55V

  • Max Gate to Source Voltage Should Be: ±20V

  • Max Continues Drain Current: 17A

  • Max Pulsed Drain Current is: 68A

  • Max Power Dissipation is: 45W

  • Drain to Source Resistance in ON State (RDS on): 0.07Ω

  • Max Storage & Operating temperature Should Be: -55 to +150 ℃

IRFZ24N Application

  • Use in Uninterruptible Power Supplies

  • Use in Voltage Converters

  • Use in Power Supplies

  • Use in Telecommunication Circuits

  • Use in Battery Charger Circuits

  • Use in Solar Chargers and Power Supplies

IRFZ24N Equivalent

The Equivalent for IRFZ24N

  • IRFZ24

  • IRFZ34

  • IRFZ34A

  • IRFZ34E

  • IRFZ34N

  • IRLIZ24G

  • IRLIZ24N

  • IRLR024

  • IRLZ24

Where & How to Use IRFZ24N?

Because the IRFZ24N MOSFET is designed for high-speed switching, it can be utilized in any switching application where speed is critical, such as a UPS circuit. It can also be utilized in a wide range of switching power supply, motor controller circuits, converter circuits, and other applications. It can also be employed in situations where unexpected voltage transients are a possibility.

Aside from that, it can be utilized in any general-purpose application that meets its requirements. It can also be utilized to construct high-powered audio amplifiers.

IRFZ24N Test Circuit

IRFZ24N Test Circuit

For N-Channel HEXFETÆ power MOSFETs

Specifications

IRFZ24NPBF Tech Specifications

Infineon Technologies IRFZ24NPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFZ24NPBF.

Product Attribute Attribute Value
Factory Lead Time12 Weeks
Contact PlatingTin
MountThrough Hole
Mounting TypeThrough Hole
Package / CaseTO-220-3
Number of Pins3Pins
Transistor Element MaterialSILICON
Current - Continuous Drain (Id) @ 25℃17A Tc
Drive Voltage (Max Rds On, Min Rds On)10V
Number of Elements1 Element
Power Dissipation (Max)45W Tc
Turn Off Delay Time19 ns
Operating Temperature-55°C~175°C TJ
PackagingTube
SeriesHEXFET®
Published1999
Part StatusActive
Moisture Sensitivity Level (MSL)1 (Unlimited)
Number of Terminations3Terminations
Product Attribute Attribute Value
TerminationThrough Hole
ECCN CodeEAR99
Resistance70mOhm
Additional FeatureAVALANCHE RATED
Voltage - Rated DC55V
Current Rating17A
Lead Pitch2.54mm
Number of Channels1Channel
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation45W
Case ConnectionDRAIN
Turn On Delay Time4.9 ns
FET TypeN-Channel
Transistor ApplicationSWITCHING
Rds On (Max) @ Id, Vgs70m Ω @ 10A, 10V
Vgs(th) (Max) @ Id4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds370pF @ 25V
Gate Charge (Qg) (Max) @ Vgs20nC @ 10V
Product Attribute Attribute Value
Rise Time34ns
Vgs (Max)±20V
Fall Time (Typ)27 ns
Continuous Drain Current (ID)17A
Threshold Voltage2V
JEDEC-95 CodeTO-220AB
Gate to Source Voltage (Vgs)20V
Drain to Source Breakdown Voltage55V
Pulsed Drain Current-Max (IDM)68A
Dual Supply Voltage55V
Max Junction Temperature (Tj)175°C
Nominal Vgs4 V
Height19.8mm
Length10.5156mm
Width4.69mm
REACH SVHCNo SVHC
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead FreeLead Free
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IRFZ24N Package

IRFZ24N Package

IRFZ24N Manufacturer

On April 1, 1999, Siemens Semiconductors officially changed its name to Infineon Technologies. Infineon is a dynamic and flexible company. Success in the highly competitive and ever-changing microelectronics world is our constant goal. As the world's leading designer, manufacturer and supplier, Infineon has a wide range of products used in various microelectronics applications. Our product portfolio includes not only logic products, including digital, mixed-signal and analogue integrated circuits but also discrete semiconductor products.

Datasheet PDF

IRFZ24NPBF Documents

Download datasheets and manufacturer documentation for IRFZ24NPBF

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