MOSFET N-CH 55V 49A TO-220AB Hello guys. This is Rose. Today we will detail the introduction of IRFZ44N. IRFZ44N is a N-channel MOSFET.
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Aug 23, 2021
Nicholas Lizzie
Mosfet Powerful Voltage Regulator IRFZ44 Mosfet
MOSFET N-CH 55V 49A TO-220AB
Hello guys. This is Rose. Today we will detail the introduction of IRFZ44N. IRFZ44N is a N-channel MOSFET.This article mainly introduce uses, price, application and other detailed information about Lifineon Technologies IRFZ44N.
IRFZ44NPBF
The IRFZ44N is a N-channel MOSFET. Its features include very low on state resistance, high speed processing technology, completely avalanche rated etc.
The transistor possesses high speed switching capability which makes it ideal to use in applications where high speed switching is a crucial requirement.
This transistor can also be used as an audio amplifier or in audio amplifier stages; it is capable to deliver maximum audio output of 94W.
IRFZ44N pinout has three terminals named as Gate, Drain and Source. They are denoted by the alphabets G, D and S respectively.
Symbol
Footprint
3D Model
●Max Continues Drain Current is : 49A
●Max Pulsed Drain Current is: 160A
●Minimum Gate threshold voltage (VGS-th) is 2V
●Maximum Gate threshold voltage (VGS-th) is 4V
●Max Gate to Source Voltage Should Be: ±20V
●Maximum Drain-Source Voltage (VDS) is 55V
●Max Power Dissipation is: 94W
●Max Storage & Operating temperature Should Be: -55 to +170 Centigrade
●Rise time and fall time is about 60ns and 45ns respectively.
●It is commonly used with Arduino, due to its low threshold current.
●Available in To-220 package
Infineon Technologies IRFZ44NPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFZ44NPBF.
Infineon Technologies IRFZ44NPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFZ44NPBF.
| Product Attribute | Attribute Value | |
|---|---|---|
| Factory Lead Time | 12 Weeks | |
| Contact Plating | Tin | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 | |
| Number of Pins | 3Pins | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 49A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 94W Tc | |
| Turn Off Delay Time | 44 ns | |
| Operating Temperature | -55°C~175°C TJ | |
| Packaging | Tube | |
| Series | HEXFET® | |
| Published | 2001 | |
| JESD-609 Code | e3 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations |
| Product Attribute | Attribute Value | |
|---|---|---|
| Termination | Through Hole | |
| ECCN Code | EAR99 | |
| Resistance | 17.5MOhm | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | |
| Voltage - Rated DC | 55V | |
| Peak Reflow Temperature (Cel) | 250 | |
| Current Rating | 49A | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Lead Pitch | 2.54mm | |
| Element Configuration | Single | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 83W | |
| Case Connection | DRAIN | |
| Turn On Delay Time | 12 ns | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 17.5m Ω @ 25A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 1470pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 63nC @ 10V |
| Product Attribute | Attribute Value | |
|---|---|---|
| Rise Time | 60ns | |
| Vgs (Max) | ±20V | |
| Fall Time (Typ) | 45 ns | |
| Continuous Drain Current (ID) | 49A | |
| Threshold Voltage | 2.1V | |
| JEDEC-95 Code | TO-220AB | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain to Source Breakdown Voltage | 55V | |
| Dual Supply Voltage | 55V | |
| Recovery Time | 95 ns | |
| Nominal Vgs | 2.1 V | |
| Height | 8.77mm | |
| Length | 10.668mm | |
| Width | 4.826mm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
The IRFZ44N is known for its high drain current and fast switching speed. Adding to that it also has a low Rds value which will help in increasing the efficiency of switching circuits.
The MOSFET will start turning on with a small gate voltage of 4V, but the drain current will be maximum only when a gate voltage of 10V is applied. If the mosfet has to be driven directly from a microcontroller like Arduino then try the logic level version IRLZ44N mosfet.
Unlike transistors MOSFET' s are voltage controlled devices. Meaning, they can be turned on or turned off by supplying the required Gate threshold voltage (VGS). IRFZ44N is an N-channel MOSFET, so the Drain and Source pins will be left open when there is no voltage applied to the gate pin. When a gate voltage is applied these pins gets closed.
If it is required to be switched with Arduino, then a simple drive circuit using a transistor will work to provide the required gate voltage to trigger the MOSFET to open fully. For other switching and amplifying applications, a dedicated MOFET Driver IC is required.
-Switching high power devices
-Control speed of motors
-LED dimmers or flashers
-High speed switching applications
-Converters or Inverter circuits
-Battery chargers
-Battery management systems
-Solar battery chargers & applications
-Uninterruptible power supplies
-Motor driver circuits
-Consumer full bridge
-full bridge
-Push all applications
Infineon Technologies AG is a German semiconductor manufacturer founded in 1999, when the semiconductor operations of the former parent company Siemens AG were spun off. Infineon has about 46,665 employees and is one of the ten largest semiconductor manufacturers worldwide. It is market leader in automotive and power semiconductors.
Download datasheets and manufacturer documentation for Infineon Technologies IRFZ44NPBF.
Download datasheets and manufacturer documentation for IRFZ44NPBF
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