Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.
Advanced processing techniques are used to create extraordinarily low on-resistance per silicon area in the IRL520 10A 100V N-Channel Power MOSFET. This benefit, when paired with the quick switching speed and ruggedized device architecture that HEXFET Power MOSFETs are known for, offers the designer a highly efficient and dependable device that can be used in a wide range of applications.