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IRL540 Power MOSFET: N-Channel, IRL540 Datasheet, Pinout, Equivalent

Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 28A TO-220AB IRL540 MOSFET belongs to the Third Generation Power MOSFETs.

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Dec 2, 2021

Xenia Lynch

How to N & P channel mosfet work, N channel & P Channel mosfet test

Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 28A TO-220AB

IRL540 MOSFET belongs to the Third Generation Power MOSFETs. This article will cover its datasheet, pinout, equivalent and more details about IRL540. Welcome your RFQ!

IRL540

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IRL540 Pinout

IRL540 Pinout

IRL540 CAD Model

IRL540 Symbol

 

IRL540 Footprint

 

IRL540 3D Model

IRL540 Description

IRL540 MOSFET comes from the Third Generation Power MOSFETs provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

IRL540 36A 100V N-Channel Power MOSFET is an advanced processing technology to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

IRL540 Feaure

• Dynamic DV/DT Rating
• Repetitive Avalanche Rated
• Logic-Level Gate Drive
• RDS(on) Specified at VGS = 4 V and 5 V
• 175 °C Operating Temperature
• Fast Switching
• Ease of Paralleling
• Compliant to  RoHS Directive  2002/95/EC

IRL540 Application

  • General Purpose Switching Applications

 

IRL540 Equivalent

The equivalent for IRL540 :

  • RL1004

  • IRL1004L

  • IRL1104

Specifications

Vishay Siliconix IRL540 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRL540.

IRL540 Tech Specifications

Vishay Siliconix IRL540 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRL540.

Product Attribute Attribute Value
MountThrough Hole
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220AB
Weight6.000006g
Current - Continuous Drain (Id) @ 25℃28A Tc
Drive Voltage (Max Rds On, Min Rds On)4V 5V
Number of Elements1 Element
Power Dissipation (Max)150W Tc
Turn Off Delay Time35 ns
Operating Temperature-55°C~175°C TJ
PackagingTube
Published2011
Part StatusObsolete
Product Attribute Attribute Value
Moisture Sensitivity Level (MSL)1 (Unlimited)
Max Operating Temperature175°C
Min Operating Temperature-55°C
Number of Channels1Channel
Element ConfigurationSingle
Power Dissipation150W
Turn On Delay Time8.5 ns
FET TypeN-Channel
Rds On (Max) @ Id, Vgs77mOhm @ 17A, 5V
Vgs(th) (Max) @ Id2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds2200pF @ 25V
Gate Charge (Qg) (Max) @ Vgs64nC @ 5V
Rise Time170ns
Drain to Source Voltage (Vdss)100V
Product Attribute Attribute Value
Vgs (Max)±10V
Fall Time (Typ)80 ns
Continuous Drain Current (ID)28A
Gate to Source Voltage (Vgs)10V
Drain to Source Breakdown Voltage100V
Input Capacitance2.2nF
Drain to Source Resistance77mOhm
Rds On Max77 mΩ
Height8.76mm
Length10.54mm
Width4.7mm
Radiation HardeningNo
RoHS StatusNon-RoHS Compliant
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IRL540 Package

IRL540 Package

 

DIM.

Millimetres

Inches

MIN.

Max.

MIN.

Max.

A

4.24

4.65

0.167

0.183

b

0.69

1.02

0.027

0.040

b(1)

1.14

1.78

0.045

0.070

c

0.36

0.61

0.014

0.024

D

14.33

15.85

0.564

0.624

E

9.96

10.52

0.392

0.414

e

2.41

2.67

0.095

0.105

e(1)

4.88

5.28

0.192

0.208

F

1.14

1.40

0.045

0.055

H(1)

6.10

6.71

0.240

0.264

J(1)

2.41

2.92

0.095

0.115

L

13.36

14.40

0.526

0.567

L(1)

3.33

4.04

0.131

0.159

Ø P

3.53

3.94

0.139

0.155

Q

2.54

3.00

0.100

0.118

ECN: X15-0364-Rev. C, 14-Dec-15

DWG: 6031

IRL540 Manufacturer

Vishay's product portfolio is an unmatched collection of discrete semiconductors (diodes, MOSFETs, and optoelectronics) and passive components (resistors, inductors, and capacitors). These components are used in virtually all types of electronic devices and equipment in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, and medical markets.  Vishay is proud to be a major partner with  Digi-Key.

Datasheet PDF

Download datasheets and manufacturer documentation for Vishay Siliconix IRL540.

IRL540 Documents

Download datasheets and manufacturer documentation for IRL540

Datasheets
IRL540, SiHL540
Other Related Documents
Packaging Information
PCN Obsolescence/ EOL
SIL-018-2015-Rev-0 20/May/2015

Frequently Asked Questions

How does N-channel mosfet activate?
N-Channel – For an N-Channel MOSFET, the source is connected to the ground. To turn the MOSFET on, we need to raise the voltage on the gate. To turn it off we need to connect the gate to the ground. P-Channel – The source is connected to the power rail (Vcc).
How do you test an N-channel Mosfet?
1) Hold the MOSFET by the case or the tab but don't touch the metal parts of the test probes with any of the other MosFet's terminals until needed. 2) First, touch the meter positive lead onto the MosFet's 'Gate'. 3) Now move the positive probe to the 'Drain'. You should get a 'low' reading.
How do you drive an N-channel Mosfet?
Use an N-Channel MOSFET with Source connected to 0V (either directly or via a current limiting resistor) and the load connected to Drain. Whenever the Gate voltage exceeds the Source voltage by at least the Gate Threshold Voltage the MOSFET conducts. The higher the voltage, the more the Mosfet can conduct.
Can I use a MOSFET instead of a relay?
To add to Andy's response, relays and MOSFETs do have their own application ranges and are not always interchangeable. For example, MOSFETs have a much, much higher switching frequency than relays — you wouldn't want to drive a stepper motor with relays.
What is the IRL540 MOSFET made up of?
Third Generation Power MOSFETs.
What is an advanced processing technology to achieve extremely low on-resistance per silicon area?
IRL540 36A 100V N-Channel Power MOSFET.
FAQ
How does N-channel mosfet activate?
N-Channel – For an N-Channel MOSFET, the source is connected to the ground. To turn the MOSFET on, we need to raise the voltage on the gate. To turn it off we need to connect the gate to the ground. P-Channel – The source is connected to the power rail (Vcc).
How do you test an N-channel Mosfet?
1) Hold the MOSFET by the case or the tab but don't touch the metal parts of the test probes with any of the other MosFet's terminals until needed. 2) First, touch the meter positive lead onto the MosFet's 'Gate'. 3) Now move the positive probe to the 'Drain'. You should get a 'low' reading.
How do you drive an N-channel Mosfet?
Use an N-Channel MOSFET with Source connected to 0V (either directly or via a current limiting resistor) and the load connected to Drain. Whenever the Gate voltage exceeds the Source voltage by at least the Gate Threshold Voltage the MOSFET conducts. The higher the voltage, the more the Mosfet can conduct.
Can I use a MOSFET instead of a relay?
To add to Andy's response, relays and MOSFETs do have their own application ranges and are not always interchangeable. For example, MOSFETs have a much, much higher switching frequency than relays — you wouldn't want to drive a stepper motor with relays.
What is the IRL540 MOSFET made up of?
Third Generation Power MOSFETs.
What is an advanced processing technology to achieve extremely low on-resistance per silicon area?
IRL540 36A 100V N-Channel Power MOSFET.

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