MOSFET N-CH 20V 4.2A SOT-23 IRLML2502 is a thin, ultra-low on-resistance, an N-Channel MOSFET, and is used in a wide SOA flat unit structure. This article mainly introduces package, pinout, datasheet and other detailed information about Infineon Technologies IRLML2502.
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Sep 20, 2021
Rosemary Quiller
MOSFET N-CH 20V 4.2A SOT-23
IRLML2502 is a thin, ultra-low on-resistance, an N-Channel MOSFET, and is used in a wide SOA flat unit structure. This article mainly introduces package, pinout, datasheet and other detailed information about Infineon Technologies IRLML2502.
IRLML2502TR
IRLML2502 is a thin, ultra-low on-resistance, an N-Channel MOSFET, and is used in a wide SOA flat unit structure. The devices are available in a variety of surface mount and through-hole packages with industry-standard footprints for ease of design. These N-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management.
A thermally enhanced large pad lead frame has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3™, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available.
Symbol
Footprint
3D Model
● Ultra-Low On-Resistance
● N-Channel MOSFET
● SOT-23 Footprint
● Low Profile (<1.1mm)
● Available In Tape And Reel
● Fast Switching
● Planar Cell Structure For Wide SOA
● Optimized For Broadest Availability From Distribution Partners
● Product Qualification According To JEDEC Standard
● Silicon Optimized For Applications Switching Below <100kHz
● Industry Standard Surface-Mount Package
Infineon Technologies IRLML2502TR technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRLML2502TR.
Infineon Technologies IRLML2502TR technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRLML2502TR.
| Product Attribute | Attribute Value | |
|---|---|---|
| Mounting Type | Surface Mount | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Surface Mount | YES | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 4.2A Ta | |
| Number of Elements | 1 Element | |
| Operating Temperature (Max.) | 150°C | |
| Packaging | Cut Tape (CT) | |
| Published | 2003 | |
| Series | HEXFET® | |
| JESD-609 Code | e3 | |
| Part Status | Discontinued | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Product Attribute | Attribute Value | |
|---|---|---|
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Matte Tin (Sn) | |
| Additional Feature | HIGH RELIABILITY | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| JESD-30 Code | R-PDSO-G3 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| FET Type | N-Channel |
| Product Attribute | Attribute Value | |
|---|---|---|
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 45m Ω @ 4.2A, 4.5V | |
| Vgs(th) (Max) @ Id | 1.2V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 740pF @ 15V | |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 5V | |
| Drain to Source Voltage (Vdss) | 20V | |
| JEDEC-95 Code | TO-236AB | |
| Drain Current-Max (Abs) (ID) | 4.2A | |
| Drain-source On Resistance-Max | 0.045Ohm | |
| Pulsed Drain Current-Max (IDM) | 33A | |
| DS Breakdown Voltage-Min | 20V | |
| Power Dissipation-Max (Abs) | 1.25W | |
| RoHS Status | Non-RoHS Compliant |
Functional Block Diagram
Electric Circuit
| Part Number | Description | Manufacturer |
| IRLML2502TRTRANSISTORS | Power Field-Effect Transistor, 4.2A I(D), 20V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-3 | International Rectifier |
| IRLML2502PBFTRANSISTORS | Power Field-Effect Transistor, 4.2A I(D), 20V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN AND LEAD-FREE, MICRO-3 | International Rectifier |
| IRLML2502TRANSISTORS | Power Field-Effect Transistor, 4.2A I(D), 20V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-3 | International Rectifier |
| IRLML2502GTRPBFTRANSISTORS | Power Field-Effect Transistor, 4.2A I(D), 20V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-Oxide-Semiconductor FET, TO-236AB, LEAD-FREE, MICRO-3 | Infineon Technologies AG |
● DC Motors
● Inverters
● SMPS
● Lighting
● Load Switches
● Battery-Powered Applications
Package
On April 1, 1999, Siemens Semiconductor officially changed its name to Infineon Technologies. Infineon is a dynamic and flexible company. Success in the highly competitive and ever-changing microelectronics world is our constant goal.
As the world's leading designer, manufacturer and supplier, Infineon has a wide range of products for various microelectronic applications. Our product portfolio includes not only logic products, including digital, mixed-signal and analog integrated circuits but also discrete semiconductor products.
Download datasheets and manufacturer documentation for Infineon Technologies IRLML2502TR.
Download datasheets and manufacturer documentation for IRLML2502TR
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