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IRLML6402 Transistor: Features, Pinout, and Datasheet

MOSFET P-CH 20V 3.7A SOT-23 The IRLML6402 is a -20V single P channel HEXFET power MOSFET in Micro3 (SOT-23) package. This article mainly introduces features, pinout, datasheet and other detailed information about Infineon Technologies IRLML6402.

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Sep 17, 2021

Larry Christiana

MOSFET P-CH 20V 3.7A SOT-23

The IRLML6402 is a -20V single P channel HEXFET power MOSFET in Micro3 (SOT-23) package. This article mainly introduces features, pinout, datasheet and other detailed information about Infineon Technologies IRLML6402.

IRLML6402TR

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IRLML6402 Description

The IRLML6402 is a -20V single P channel HEXFET power MOSFET in Micro3 (SOT-23) package. This MOSFET features extremely low on-resistance per silicon area, ruggedness, fast switching as a result, power MOSFET are well known to provide extremely efficiency and reliability which can be used in a wide variety of applications such as battery and load management, portable electronics and PCMCIA cards and printed circuit board where space is at a premium.

 

These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management.

 

A thermally enhanced large pad lead frame has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3™, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available. 

 

IRLML6402 Pinout

IRLML6402 CAD Model

Symbol

Footprint

3D Model

IRLML6402 Features

● Ultra-Low On-Resistance

● P-Channel MOSFET

● SOT-23 Footprint

● Low Profile (<1.1mm)

● Available In Tape And Reel

● Fast Switching

● Lead-Free

● Halogen-Free

● Drain To Source Voltage (Vds) Of -20V

● Gate To Source Voltage Of ±12V

● On-Resistance Rds(on) Of 80Mohm At Vgs -2.5V

● Power Dissipation Pd Of 1.3W At 25°C

● Continuous Drain Current Id Of -3.7A At Vgs -4.5V And 25°C

● Operating Junction Temperature Range From -55°C To 150°C

● 0.01W/°C Linear Derating Factor

Specifications

Infineon Technologies IRLML6402TR technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRLML6402TR.

IRLML6402TR Tech Specifications

Infineon Technologies IRLML6402TR technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRLML6402TR.

Product Attribute Attribute Value
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Surface MountYES
Transistor Element MaterialSILICON
Current - Continuous Drain (Id) @ 25℃3.7A Ta
Number of Elements1 Element
Operating Temperature (Max.)150°C
PackagingCut Tape (CT)
SeriesHEXFET®
Published2003
JESD-609 Codee3
Part StatusObsolete
Moisture Sensitivity Level (MSL)1 (Unlimited)
Number of Terminations3Terminations
Product Attribute Attribute Value
ECCN CodeEAR99
Terminal FinishMatte Tin (Sn)
Additional FeatureHIGH RELIABILITY
Terminal PositionDUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel)260
Time@Peak Reflow Temperature-Max (s)30
JESD-30 CodeR-PDSO-G3
Qualification StatusNot Qualified
ConfigurationSINGLE WITH BUILT-IN DIODE
Operating ModeENHANCEMENT MODE
FET TypeP-Channel
Transistor ApplicationSWITCHING
Rds On (Max) @ Id, Vgs65m Ω @ 3.7A, 4.5V
Product Attribute Attribute Value
Vgs(th) (Max) @ Id1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds633pF @ 10V
Gate Charge (Qg) (Max) @ Vgs12nC @ 5V
Drain to Source Voltage (Vdss)20V
JEDEC-95 CodeTO-236AB
Drain Current-Max (Abs) (ID)3.7A
Drain-source On Resistance-Max0.065Ohm
Pulsed Drain Current-Max (IDM)22A
DS Breakdown Voltage-Min20V
Avalanche Energy Rating (Eas)11 mJ
Power Dissipation-Max (Abs)1.3W
RoHS StatusNon-RoHS Compliant
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IRLML6402 Block Diagram

Block Diagram

IRLML6402 Tape and Reel Information

IRLML6402 Applications

● 3C Digital

● Medical Electronics

● IoT

● New Energy

● Battery

● Load Management

● Portable Electronics

● PCMCIA Cards

● Printed Circuit Board Where Space Is At A Premium

● DC Switches

● Load Switch

IRLML6402 Package

IRLML6402 Manufacturer

On April 1, 1999, Siemens Semiconductors officially changed its name to Infineon Technologies. Infineon is a dynamic and flexible company. Success in the highly competitive and ever-changing microelectronics world is our constant goal. As the world's leading designer, manufacturer and supplier, Infineon has a wide range of products used in various microelectronics applications. Our product portfolio includes not only logic products, including digital, mixed-signal and analog integrated circuits, but also discrete semiconductor products.

 

Datasheet PDF

Download datasheets and manufacturer documentation for Infineon Technologies IRLML6402TR.

IRLML6402TR Documents

Download datasheets and manufacturer documentation for IRLML6402TR

Other Related Documents
Part Number Guide
PCN Obsolescence/ EOL
(PMD) Leaded Parts 25/May/2012

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