
MOSFET P-CH 20V 3.7A SOT-23
The IRLML6402 is a -20V single P channel HEXFET power MOSFET in Micro3 (SOT-23) package. This article mainly introduces features, pinout, datasheet and other detailed information about Infineon Technologies IRLML6402.
MOSFET P-CH 20V 3.7A SOT-23 The IRLML6402 is a -20V single P channel HEXFET power MOSFET in Micro3 (SOT-23) package. This article mainly introduces features, pinout, datasheet and other detailed information about Infineon Technologies IRLML6402.
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Sep 17, 2021
Larry Christiana

MOSFET P-CH 20V 3.7A SOT-23
The IRLML6402 is a -20V single P channel HEXFET power MOSFET in Micro3 (SOT-23) package. This article mainly introduces features, pinout, datasheet and other detailed information about Infineon Technologies IRLML6402.
The IRLML6402 is a -20V single P channel HEXFET power MOSFET in Micro3 (SOT-23) package. This MOSFET features extremely low on-resistance per silicon area, ruggedness, fast switching as a result, power MOSFET are well known to provide extremely efficiency and reliability which can be used in a wide variety of applications such as battery and load management, portable electronics and PCMCIA cards and printed circuit board where space is at a premium.
These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management.
A thermally enhanced large pad lead frame has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3™, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available.


Symbol

Footprint

3D Model
● Ultra-Low On-Resistance
● P-Channel MOSFET
● SOT-23 Footprint
● Low Profile (<1.1mm)
● Available In Tape And Reel
● Fast Switching
● Lead-Free
● Halogen-Free
● Drain To Source Voltage (Vds) Of -20V
● Gate To Source Voltage Of ±12V
● On-Resistance Rds(on) Of 80Mohm At Vgs -2.5V
● Power Dissipation Pd Of 1.3W At 25°C
● Continuous Drain Current Id Of -3.7A At Vgs -4.5V And 25°C
● Operating Junction Temperature Range From -55°C To 150°C
● 0.01W/°C Linear Derating Factor
Infineon Technologies IRLML6402TR technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRLML6402TR.
Infineon Technologies IRLML6402TR technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRLML6402TR.
| Product Attribute | Attribute Value | |
|---|---|---|
| Mounting Type | Surface Mount | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Surface Mount | YES | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 3.7A Ta | |
| Number of Elements | 1 Element | |
| Operating Temperature (Max.) | 150°C | |
| Packaging | Cut Tape (CT) | |
| Series | HEXFET® | |
| Published | 2003 | |
| JESD-609 Code | e3 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations |
| Product Attribute | Attribute Value | |
|---|---|---|
| ECCN Code | EAR99 | |
| Terminal Finish | Matte Tin (Sn) | |
| Additional Feature | HIGH RELIABILITY | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| JESD-30 Code | R-PDSO-G3 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| FET Type | P-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 65m Ω @ 3.7A, 4.5V |
| Product Attribute | Attribute Value | |
|---|---|---|
| Vgs(th) (Max) @ Id | 1.2V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 633pF @ 10V | |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 5V | |
| Drain to Source Voltage (Vdss) | 20V | |
| JEDEC-95 Code | TO-236AB | |
| Drain Current-Max (Abs) (ID) | 3.7A | |
| Drain-source On Resistance-Max | 0.065Ohm | |
| Pulsed Drain Current-Max (IDM) | 22A | |
| DS Breakdown Voltage-Min | 20V | |
| Avalanche Energy Rating (Eas) | 11 mJ | |
| Power Dissipation-Max (Abs) | 1.3W | |
| RoHS Status | Non-RoHS Compliant |

Block Diagram

● 3C Digital
● Medical Electronics
● IoT
● New Energy
● Battery
● Load Management
● Portable Electronics
● PCMCIA Cards
● Printed Circuit Board Where Space Is At A Premium
● DC Switches
● Load Switch

On April 1, 1999, Siemens Semiconductors officially changed its name to Infineon Technologies. Infineon is a dynamic and flexible company. Success in the highly competitive and ever-changing microelectronics world is our constant goal. As the world's leading designer, manufacturer and supplier, Infineon has a wide range of products used in various microelectronics applications. Our product portfolio includes not only logic products, including digital, mixed-signal and analog integrated circuits, but also discrete semiconductor products.
Download datasheets and manufacturer documentation for Infineon Technologies IRLML6402TR.
Download datasheets and manufacturer documentation for IRLML6402TR
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