Bipolar Transistors - BJT PNP Power Switching The MJ2955 is a silicon PNP transistor in a TO?3 type case designed for general purpose switching and amplifier applications.
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Aug 15, 2021
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Bipolar Transistors - BJT PNP Power Switching
The MJ2955 is a silicon PNP transistor in a TO−3 type case designed for general purpose switching and amplifier applications. This article enforces datasheet, pinout, applications, schematic, and other details about MJ2955.
MJ2955
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STMicroelectronics MJ2955 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics MJ2955.
STMicroelectronics MJ2955 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics MJ2955.
| Product Attribute | Attribute Value | |
|---|---|---|
| Mount | Chassis Mount, Through Hole | |
| Mounting Type | Chassis Mount | |
| Package / Case | TO-204AA, TO-3 | |
| Number of Pins | 2Pins | |
| Weight | 9.071847g | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 60V | |
| Collector-Emitter Saturation Voltage | 1V | |
| Number of Elements | 1 Element | |
| hFEMin | 20 | |
| Operating Temperature | 200°C TJ | |
| Packaging | Tray | |
| JESD-609 Code | e3 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 2Terminations | |
| ECCN Code | EAR99 |
| Product Attribute | Attribute Value | |
|---|---|---|
| Terminal Finish | Tin (Sn) | |
| Voltage - Rated DC | -60V | |
| Max Power Dissipation | 115W | |
| Terminal Position | BOTTOM | |
| Terminal Form | PIN/PEG | |
| Current Rating | -15A | |
| Frequency | 3MHz | |
| Base Part Number | MJ29 | |
| Pin Count | 2 | |
| Element Configuration | Single | |
| Power Dissipation | 115W | |
| Case Connection | COLLECTOR | |
| Transistor Application | SWITCHING | |
| Gain Bandwidth Product | 3MHz | |
| Polarity/Channel Type | PNP | |
| Transistor Type | PNP | |
| Collector Emitter Voltage (VCEO) | 60V |
| Product Attribute | Attribute Value | |
|---|---|---|
| Max Collector Current | 15A | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 4A 4V | |
| Current - Collector Cutoff (Max) | 700μA | |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 3.3A, 10A | |
| Transition Frequency | 2.5MHz | |
| Collector Base Voltage (VCBO) | 100V | |
| Emitter Base Voltage (VEBO) | 7V | |
| VCEsat-Max | 3 V | |
| Height | 6.35mm | |
| Length | 2.54mm | |
| Width | 2.54mm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
DC Current Gain: hFE = 20 − 70 @ IC = 4A
Collector−Emitter Saturation Voltage: VCE(sat) = 1.1V (Max) @ IC = 4A
Excellent Safe Operating Area
MJ2955 silicon power transistors are designed for general-purpose switching and amplifier applications. They can carry an impressive 15 Amps of collector current making them ideal for high power switching applications such as motor drivers for use in power inverters.
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
Download datasheets and manufacturer documentation for STMicroelectronics MJ2955.
Download datasheets and manufacturer documentation for MJ2955
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