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HomeCommunitySubjectMJE13007 NPN Bipolar Power Transistor: Equivalent, Datasheet and Pinout

MJE13007 NPN Bipolar Power Transistor: Equivalent, Datasheet and Pinout

TRANS NPN 400V 8A TO220AB MJE13007 is a Switch-mode NPN Bipolar power transistor. This article enforces equivalent, pinout, datasheet, circuit, power, and other details about MJE13007 transistor.

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Sep 27, 2021

Robert Dewey

Simple Audio Amplifier Circuit using 13007 transistors

 

TRANS NPN 400V 8A TO220AB

MJE13007 is a Switch-mode NPN Bipolar power transistor. This article enforces equivalent, pinout, datasheet, circuit, power, and other details about MJE13007 transistor. Furthermore, there is a huge range of semiconductors, capacitors, resistors, and ICs in stock. Welcome your RFQ!

MJE13007

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MJE13007 Pinout

MJE13007 Description

The MJE13007 is designed for high voltage, high-speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switch mode applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers, and Deflection circuits. VCEO (sus) 400 V Reverse Bias SOA with Inductive Loads 700 V Blocking Capability SOA and Switching Applications Information Standard TO­220.

MJE13007 CAD Model

MJE13007 Footprint

 

MJE13007 3D Model

Specifications

ON Semiconductor MJE13007 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJE13007.

MJE13007 Tech Specifications

ON Semiconductor MJE13007 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJE13007.

Product Attribute Attribute Value
Lifecycle StatusLAST SHIPMENTS (Last Updated: 1 day ago)
Surface MountNO
Package / CaseTO-220-3
Mounting TypeThrough Hole
Number of Pins3Pins
Transistor Element MaterialSILICON
hFEMin8
Number of Elements1 Element
Collector-Emitter Saturation Voltage1V
Collector-Emitter Breakdown Voltage400V
Published2009
SeriesSWITCHMODE™
PackagingTube
Operating Temperature-65°C~150°C TJ
JESD-609 Codee0
Pbfree Codeno
Product Attribute Attribute Value
Part StatusObsolete
Moisture Sensitivity Level (MSL)1 (Unlimited)
Number of Terminations3Terminations
ECCN CodeEAR99
Terminal FinishTin/Lead (Sn/Pb)
Voltage - Rated DC400V
Max Power Dissipation80W
Peak Reflow Temperature (Cel)240
Reach Compliance Codenot_compliant
Current Rating8A
Time@Peak Reflow Temperature-Max (s)30
Pin Count3
Qualification StatusNot Qualified
Element ConfigurationSingle
Power Dissipation80W
Case ConnectionCOLLECTOR
Product Attribute Attribute Value
Transistor ApplicationSWITCHING
Gain Bandwidth Product14MHz
Polarity/Channel TypeNPN
Transistor TypeNPN
Collector Emitter Voltage (VCEO)3V
Max Collector Current8A
DC Current Gain (hFE) (Min) @ Ic, Vce5 @ 5A 5V
Current - Collector Cutoff (Max)100μA
JEDEC-95 CodeTO-220AB
Vce Saturation (Max) @ Ib, Ic3V @ 2A, 8A
Transition Frequency14MHz
Collector Base Voltage (VCBO)700V
Emitter Base Voltage (VEBO)9V
RoHS StatusNon-RoHS Compliant
Lead FreeContains Lead
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MJE13007 Features

  • Type - NPN

  • Collector-Emitter Voltage: 400 V

  • Collector-Base Voltage: 700 V

  • Emitter-Base Voltage: 9 V

  • Collector Current: 8 A

  • Collector Dissipation - 80 W

  • DC Current Gain (hfe) - 8 to 60

  • Transition Frequency - 4 MHz

  • Operating and Storage Junction Temperature Range -65 to +150 °C

  • Package - TO-220

Equivalent and Replacement for MJE13007

MJE13005, MJE13006, MJE15020, FJP13007, KSE13006, KSE13007, KSE13007F, MJE13007A, MJE13007G, STD13007F, BUJ105A, BUJ105AX, PHE13007, ST13007, BUL138, BUL128D-B, BUL381D, 2SC2898, MJE13006, 2SC233, 2SC427, 2SC2335, 2SC2553, TE13007

MJE13007 Applications

  • High Voltage Fast Switching Applications

  • Uninterrupted Power Supplies

  • Power Supplies

  • Inverter Circuits

  • Battery Charger and Management Applications

  • Motor Controllers

  • Audio Amplifier & Audio Amplifier Stages

Where and How to Use MJE13007

The MJE13007 transistor can be used in a variety of applications, including high-voltage applications, inverters, power supply, motor controllers, UPS, and battery charging.

This transistor, on the other hand, can be utilized as an audio amplifier in a variety of applications, including high-power audio amplifiers.

MJE13007 Circuit

It is recommended that you utilize MJE13007 20 percent below its maximum ratings for long-term performance. Because the transistor's maximum collector current is 8A, do not drive a load that draws more than 6.4A. Because the maximum voltage this transistor can produce from its collector to emitter is 400V, do not use it to drive loads that are higher than 300V to 320V. It generates heat during operation, thus a proper heatsink is required, and it should always be operated and stored at temperatures between -65 and +150 degrees Celsius.

MJE13007 Circuit

MJE13007 Dimension Outline

MJE13007 Dimension Outline

MJE13007 Manufacturer

On Semiconductor (Nasdaq: ON) is a manufacturer engaging itself in reducing energy use. It features a comprehensive portfolio of power, signal management, and logic, custom solutions that are energy efficient. It acts as a world-class supply chain with high reliability and a network of manufacturing facilities, sales, offices, and design centers in key markets through North America, Europe, and the Asia Pacific regions.

Datasheet PDF

Download datasheets and manufacturer documentation for ON Semiconductor MJE13007.

MJE13007 Documents

Download datasheets and manufacturer documentation for MJE13007

Frequently Asked Questions

What is MJE13007 used for?
The MJE13007 is designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switch−mode applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers, and Deflection circuits.
How does MJE13007 work?
MJE13007 is an NPN bipolar junction transistor that is a semiconductor device made of silicon material. The collector-base voltage is 700V while the collector-emitter voltage is 400V. The power dissipation at temp 25C is 80W. This means 80W is released during the working of this device.
Are MJE13007 and MJE13007-2 the same? Can they be used in common?
MJE13007 and MJE13007-2 are the same, that is, the -2 chip should be larger, and the use is the same. If the cost remains the same, use 13007-2. In addition, J13007 starts with J and usually imports chips, and starts with E. The ones are domestically produced.
FAQ
What is MJE13007 used for?
The MJE13007 is designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switch−mode applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers, and Deflection circuits.
How does MJE13007 work?
MJE13007 is an NPN bipolar junction transistor that is a semiconductor device made of silicon material. The collector-base voltage is 700V while the collector-emitter voltage is 400V. The power dissipation at temp 25C is 80W. This means 80W is released during the working of this device.
Are MJE13007 and MJE13007-2 the same? Can they be used in common?
MJE13007 and MJE13007-2 are the same, that is, the -2 chip should be larger, and the use is the same. If the cost remains the same, use 13007-2. In addition, J13007 starts with J and usually imports chips, and starts with E. The ones are domestically produced.

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