MJE13009 is a 12 AMPERE NPN silicon power transistor featuring 400 VOLTS ? 100 WATTS. This post mainly introduces the datasheet, power, circuit, equivalent, pinout, and more details about transistor MJE13009.
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Sep 30, 2021
Bowen Saxton
MJE13009 check transistor MJE13009
TRANS NPN 400V 12A TO220AB
MJE13009 is a 12 AMPERE NPN silicon power transistor featuring 400 VOLTS − 100 WATTS. This post mainly introduces the datasheet, power, circuit, equivalent, pinout, and more details about transistor MJE13009. Furthermore, there is a huge range of semiconductors, capacitors, resistors, and ICs in stock. Welcome your RFQ!
MJE13009
The pinout diagram for MJE13009 is shown in the diagram below.
Different doping concentrations are carried by the terminals. In comparison to other terminals, the collector pin is minimally doped, whereas the emitter pin is heavily doped. Similarly, the collector terminal is 10-times more doped than the base pin.
MJE13009 Pinout
| Pin No | Pin Name |
| 1 | Base |
| 2 | Collector |
| 3 | Emitter |
| 4 | Case (Collector) |
MJE13009 Symbol
MJE13009 Footprint
MJE13009 3D Model
The MJE13009 is a high-voltage, high-speed power switching inductive circuit with a critical fall time. Switching Regulators, Inverters, Motor Controls, Solenoid/Relay Drivers, and Deflection Circuits are among the many 115 and 220 V switch-mode applications that they are well suited for.
ON Semiconductor MJE13009 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJE13009.
ON Semiconductor MJE13009 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJE13009.
| Product Attribute | Attribute Value | |
|---|---|---|
| Lifecycle Status | OBSOLETE (Last Updated: 1 week ago) | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 | |
| Number of Pins | 3Pins | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 400V | |
| Collector-Emitter Saturation Voltage | 1V | |
| Number of Elements | 1 Element | |
| hFEMin | 8 | |
| Operating Temperature | -65°C~150°C TJ | |
| Packaging | Tube | |
| Published | 2006 | |
| JESD-609 Code | e0 | |
| Pbfree Code | no | |
| Part Status | Obsolete |
| Product Attribute | Attribute Value | |
|---|---|---|
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Additional Feature | LEADFORM OPTIONS ARE AVAILABLE | |
| Voltage - Rated DC | 400V | |
| Max Power Dissipation | 2W | |
| Peak Reflow Temperature (Cel) | 240 | |
| Reach Compliance Code | not_compliant | |
| Current Rating | 12A | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Pin Count | 3 | |
| Qualification Status | Not Qualified | |
| Element Configuration | Single | |
| Power Dissipation | 2W | |
| Case Connection | COLLECTOR |
| Product Attribute | Attribute Value | |
|---|---|---|
| Transistor Application | SWITCHING | |
| Gain Bandwidth Product | 4MHz | |
| Polarity/Channel Type | NPN | |
| Transistor Type | NPN | |
| Collector Emitter Voltage (VCEO) | 3V | |
| Max Collector Current | 12A | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 8 @ 5A 5V | |
| JEDEC-95 Code | TO-220AB | |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 3A, 12A | |
| Transition Frequency | 4MHz | |
| Collector Base Voltage (VCBO) | 700V | |
| Emitter Base Voltage (VEBO) | 9V | |
| RoHS Status | Non-RoHS Compliant | |
| Lead Free | Contains Lead |
VCEO (sus) 400 V and 300 V
Reverse Bias SOA with Inductive Loads @ TC = 100C
Inductive Switching Matrix 3 to 12 Amp, 25 and 100C tc @ 8 A, 100C is 120 ns (Typ)
700 V Blocking Capabilities
SOA and Switching Applications Information
Pb−Free Package is Available*
MJE1100, MJE1101, MJE1102, MJE1103, MJE1123, MJE12007
Switching Regulators
Inverters
Motor Controls
Solenoid/Relay drivers and Deflection circuits
MJE13009 Circuit
The total transistor operation is controlled by the base pin. When voltage is added to the base pin, the device is biased, and currently begins to flow from the collector to the emitter terminal.
The absence of symmetry within the transistor device is due to the varied doping concentrations of all these terminals.
Bipolar junction transistors are not symmetrical, which means that if you swap the collector and emitter terminals, the terminals will stop behaving in forward active mode and start acting in reverse mode. The value of both common-emitter and common-base current gains can be influenced by this terminal swapping.
MJE13009 Dimension
On Semiconductor (Nasdaq: ON) is a manufacturer engaging itself in reducing energy use. It features a comprehensive portfolio of power, signal management, and logic, custom solutions that are energy efficient. It acts as a world-class supply chain with high reliability and a network of manufacturing facilities, sales, offices, and design centers in key markets through North America, Europe, and the Asia Pacific regions.
Download datasheets and manufacturer documentation for ON Semiconductor MJE13009.
Download datasheets and manufacturer documentation for MJE13009
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