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HomeCommunitySubjectMJE3055 Transistor: Diagram, Pinout, and Datasheet [Video]

MJE3055 Transistor: Diagram, Pinout, and Datasheet [Video]

Transistors - Bipolar (BJT) - Single Trans GP BJT NPN 60V 10A 3-Pin(3+Tab) TO-220 Tube The MJE3055 is a Jedec TO-220 silicon Epitaxial-Base NPN transistor. This article mainly introduces diagram, pinout, datasheet and other detailed information about STMicroelectronics MJE3055.

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Oct 26, 2021

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Transistors - Bipolar (BJT) - Single Trans GP BJT NPN 60V 10A 3-Pin(3 Tab) TO-220 Tube

The MJE3055 is a Jedec TO-220 silicon Epitaxial-Base NPN transistor. This article mainly introduces diagram, pinout, datasheet and other detailed information about STMicroelectronics MJE3055.

MJE3055T

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MJE3055 Description

The MJE3055 is a  Jedec  TO-220 silicon Epitaxial-Base NPN transistor. Power switching circuits and general-purpose amplifiers are among the applications. MJE2955T is the complementary PNP type.

MJE3055 Pinout

The following figure is the Pinout of MJE3055.

Pinout

 

Pin Number Pin Name
1 Base
2 Collector
3 Emitter
4 Case (Collector)

MJE3055 CAD Model

Footprint

3D Model

MJE3055 Features

•  DC Current  Gain Specified to 10 Amperes

• High Current Gain — Bandwidth Product — fT = 2.0 MHz (Min) @ IC = 500 mAdc

• Type Designator: MJE3055T

• Material of Transistor: Si

• Polarity: NPN

• Maximum Emitter-Base Voltage |Veb|: 5 V

Specifications

MJE3055T Tech Specifications

STMicroelectronics MJE3055T technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics MJE3055T.

Product Attribute Attribute Value
Factory Lead Time8 Weeks
Contact PlatingTin
MountThrough Hole
Mounting TypeThrough Hole
Package / CaseTO-220-3
Number of Pins3Pins
Weight4.535924g
Transistor Element MaterialSILICON
Collector-Emitter Breakdown Voltage60V
Collector-Emitter Saturation Voltage1.1V
Number of Elements1 Element
hFEMin20
Operating Temperature150°C TJ
PackagingTube
JESD-609 Codee3
Part StatusActive
Product Attribute Attribute Value
Moisture Sensitivity Level (MSL)1 (Unlimited)
Number of Terminations3Terminations
ECCN CodeEAR99
Voltage - Rated DC60V
Max Power Dissipation75W
Current Rating10A
Frequency2MHz
Base Part NumberMJE305
Pin Count3
Element ConfigurationSingle
Power Dissipation75W
Transistor ApplicationSWITCHING
Gain Bandwidth Product2MHz
Polarity/Channel TypeNPN
Transistor TypeNPN
Collector Emitter Voltage (VCEO)60V
Product Attribute Attribute Value
Max Collector Current10A
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 4A 4V
Current - Collector Cutoff (Max)700μA
Vce Saturation (Max) @ Ib, Ic8V @ 3.3A, 10A
Transition Frequency2MHz
Collector Base Voltage (VCBO)70V
Emitter Base Voltage (VEBO)5V
VCEsat-Max8 V
Height9.15mm
Length10.4mm
Width4.6mm
REACH SVHCNo SVHC
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead FreeLead Free
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How to use MJE3055 Transistor

1.

MJE3055 is a fixed 5V regulator circuit that might provide a simple solution for one transistor. The output voltage – threshold voltage transistor's Zener voltage is calculated using the formula 5 V Regulator Schematic. It has to do with electronics projects, namely a simple 5V regulator circuit.

5 V Regulator Schematic

2. The following figure is the Alarm Monitoring Circuit of MJE3055.

Alarm monitoring – Great alarm monitoring circuit using MJE2955, MJE3055

MJE3055 Equivalent

MJE1101, MJE1102, MJE1103, MJE1123, MJE12007, MJE1290, MJE2955

MJE3055 Alternatives

Part Number Description Manufacturer
MJE3055TJ69ZTRANSISTORS Power Bipolar Transistor, 1-Element, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN Fairchild Semiconductor Corporation
MJE3055TTRANSISTORS Bipolar Power Transistor, NPN, 10 A, 60 V, 75 Watt, TO-220 3 LEAD STANDARD, 50-TUBE onsemi
MJE3055TTUTRANSISTORS Bipolar Power Transistor, NPN, 10 A, 60 V, 75 Watt, 1000-TUBE onsemi
MJE3055TGTRANSISTORS Bipolar Power Transistor, NPN, 10 A, 60 V, 75 Watt, TO-220 3 LEAD STANDARD, 50-TUBE onsemi

MJE3055 Applications

• Power Switching Circuits

• General-Purpose Amplifiers

MJE3055 Package

The Package of MJE3055 is shown as follows.

Package

MJE3055 Manufacturer

STMicroelectronics, headquartered in Plan-les-Ouates, Switzerland, near Geneva, is a multinational electronics and semiconductors firm. The company was created in 1987 by the merger of two government-owned semiconductor companies: "Thomson Semiconductors" in France and "SGS Microelettronica" in Italy. It is known as "ST" and is the most profitable semiconductor chip producer in Europe. While the corporate headquarters and EMEA  regional offices of STMicroelectronics are in Geneva, the holding company, STMicroelectronics N.V., is based in the Netherlands.

The company's US headquarters are located in Coppell, Texas. The headquarters for the Asia-Pacific region is in Singapore, while Japan and Korea's activities are in Tokyo. The company's China regional headquarters are based in Shanghai.

ST In situations where microelectronics has a positive impact on people's lives, microelectronics technology can be discovered. Automobiles and key fobs, big manufacturing machinery and data center power supplies, washing machines and hard drives, cellphones and toothbrushes all use ST chips with the newest developments. We help our clients make their devices smarter, more energy-efficient, connected, safer, and more secure.

Datasheet PDF

MJE3055T Documents

Download datasheets and manufacturer documentation for MJE3055T

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