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The MJE3055T is a Jedec TO-220 silicon epitaxial-base NPN transistor. This article is going to introduce pinout, features, and more details about MJE3055T.
HomeCommunitySubjectMJE3055T Bipolar (BJT) Transistor NPN 60 V 10 A[Video]: Datasheet, Pinout, and Features
MJE3055T Bipolar (BJT) Transistor NPN 60 V 10 A[Video]: Datasheet, Pinout, and Features
The MJE3055T is a Jedec TO-220 silicon epitaxial-base NPN transistor. This article is going to introduce pinout, features, and more details about MJE3055T.
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Mar 31, 2022
Elroy Forster
MJE3055T
2In Stock
Min.: 1 Mult.: 1
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.46961 | $1.47 |
| 10+ | $1.38643 | $13.86 |
| 100+ | $1.30795 | $130.79 |
| 500+ | $1.23391 | $616.96 |
| 1000+ | $1.16407 | $1164.07 |
Unit Price:$1.46961
Subtotal: $1.47
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MJE3055 Description
The MJE3055 is a Jedec TO-220 silicon Epitaxial-Base NPN transistor. Power switching circuits and general-purpose amplifiers are among the applications. MJE2955T is the complementary PNP type.
MJE3055 Pinout
The following figure is the Pinout of MJE3055.
Pinout
| Pin Number | Pin Name |
| 1 | Base |
| 2 | Collector |
| 3 | Emitter |
| 4 | Case (Collector) |
MJE3055 CAD Model
Footprint
3D Model
MJE3055 Features
• DC Current Gain Specified to 10 Amperes
• High Current Gain — Bandwidth Product — fT = 2.0 MHz (Min) @ IC = 500 mAdc
• Type Designator: MJE3055T
• Material of Transistor: Si
• Polarity: NPN
• Maximum Emitter-Base Voltage |Veb|: 5 V
Specifications
MJE3055T Tech Specifications
MJE3055T Tech Specifications
STMicroelectronics MJE3055T technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics MJE3055T.
| Product Attribute | Attribute Value | |
|---|---|---|
| Factory Lead Time | 8 Weeks | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 | |
| Contact Plating | Tin | |
| Number of Pins | 3Pins | |
| Weight | 4.535924g | |
| Transistor Element Material | SILICON | |
| Power Dissipation (Max) | 75W | |
| Number of Elements | 1 Element | |
| Collector-Emitter Breakdown Voltage | 60V | |
| Collector-Emitter Saturation Voltage | 1.1V | |
| Frequency - Gain Bandwidth Product (GBP) | 2MHz | |
| hFEMin | 20 | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tube |
| Product Attribute | Attribute Value | |
|---|---|---|
| JESD-609 Code | e3 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Voltage - Rated DC | 60V | |
| Current Rating | 10A | |
| Frequency | 2MHz | |
| Base Part Number | MJE305 | |
| Element Configuration | Single | |
| Power Dissipation | 75W | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | NPN | |
| Transistor Type | NPN | |
| Collector Emitter Voltage (VCEO) | 60V | |
| Max Collector Current | 10A |
| Product Attribute | Attribute Value | |
|---|---|---|
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 4A 4V | |
| Current - Collector Cutoff (Max) | 700μA | |
| Vce Saturation (Max) @ Ib, Ic | 8V @ 3.3A, 10A | |
| Transition Frequency | 2MHz | |
| Collector Base Voltage (VCBO) | 70V | |
| Emitter Base Voltage (VEBO) | 5V | |
| VCEsat-Max | 8 V | |
| Height | 9.15mm | |
| Length | 10.4mm | |
| Width | 4.6mm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
How to use MJE3055 Transistor
1.
MJE3055 is a fixed 5V regulator circuit that might provide a simple solution for one transistor. The output voltage – threshold voltage transistor's Zener voltage is calculated using the formula 5 V Regulator Schematic. It has to do with electronics projects, namely a simple 5V regulator circuit.
5 V Regulator Schematic
2. The following figure is the Alarm Monitoring Circuit of MJE3055.
Alarm monitoring – Great alarm monitoring circuit using MJE2955, MJE3055
MJE3055 Equivalent
MJE1101, MJE1102, MJE1103, MJE1123, MJE12007, MJE1290, MJE2955
MJE3055 Alternatives
| Part Number | Description | Manufacturer |
| MJE3055TJ69ZTRANSISTORS | Power Bipolar Transistor, 1-Element, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN | Fairchild Semiconductor Corporation |
| MJE3055TTRANSISTORS | Bipolar Power Transistor, NPN, 10 A, 60 V, 75 Watt, TO-220 3 LEAD STANDARD, 50-TUBE | onsemi |
| MJE3055TTUTRANSISTORS | Bipolar Power Transistor, NPN, 10 A, 60 V, 75 Watt, 1000-TUBE | onsemi |
| MJE3055TGTRANSISTORS | Bipolar Power Transistor, NPN, 10 A, 60 V, 75 Watt, TO-220 3 LEAD STANDARD, 50-TUBE | onsemi |
MJE3055 Applications
• Power Switching Circuits
• General-Purpose Amplifiers
MJE3055 Package
The Package of MJE3055 is shown as follows.
Package
MJE3055 Manufacturer
STMicroelectronics, headquartered in Plan-les-Ouates, Switzerland, near Geneva, is a multinational electronics and semiconductors firm. The company was created in 1987 by the merger of two government-owned semiconductor companies: "Thomson Semiconductors" in France and "SGS Microelettronica" in Italy. It is known as "ST" and is the most profitable semiconductor chip producer in Europe. While the corporate headquarters and EMEA regional offices of STMicroelectronics are in Geneva, the holding company, STMicroelectronics N.V., is based in the Netherlands.
The company's US headquarters are located in Coppell, Texas. The headquarters for the Asia-Pacific region is in Singapore, while Japan and Korea's activities are in Tokyo. The company's China regional headquarters are based in Shanghai.
ST In situations where microelectronics has a positive impact on people's lives, microelectronics technology can be discovered. Automobiles and key fobs, big manufacturing machinery and data center power supplies, washing machines and hard drives, cellphones and toothbrushes all use ST chips with the newest developments. We help our clients make their devices smarter, more energy-efficient, connected, safer, and more secure.
Datasheet PDF
MJE3055T Documents
MJE3055T Documents
Download datasheets and manufacturer documentation for MJE3055T
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