TRANS NPN 40V 0.2A SOT23
The MMBT3904LT1G is a general-purpose NPN silicon bipolar transistor designed for use in linear and switching applications.
MMBT3904LT1G NPN Transistor: Datasheet, Circuits, and Marking Diagram
TRANS NPN 40V 0.2A SOT23 The MMBT3904LT1G is a general-purpose NPN silicon bipolar transistor designed for use in linear and switching applications.
167
Aug 17, 2021
Stacey Eugene
MMBT3904LT1G
837309In Stock
Min.: 1 Mult.: 1
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.11905 | $0.12 |
| 10+ | $0.11231 | $1.12 |
| 100+ | $0.10595 | $10.6 |
| 500+ | $0.09995 | $49.98 |
| 1000+ | $0.0943 | $94.3 |
Unit Price:$0.11905
Subtotal: $0.12
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MMBT3904LT1G Description
he MMBT3904LT1G is a general-purpose NPN silicon bipolar transistor designed for use in linear and switching applications. It is housed in the SOT-23 package, which is designed for lower power surface mount applications. The MMBT3904LT1G can be used in circuits requiring high-current density, and it can operate in a high voltage range. The MMBT3904LT1G's maximum emitter-base voltage is 6 V. Its maximum power dissipation is 300 mW.
MMBT3904LT1G Pinout
MMBT3904LT1G CAD Model
Symbol
Footprint
3D Model
MMBT3904LT1G Marking Diagram
MMBT3904LT1G Features
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Package Type: SOT−23 (TO−236)
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Transistor Type: NPN
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Max Collector Current(IC): 200 mA
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Max Collector-Emitter Voltage (VCEO): 40 V
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Max Collector-Base Voltage (VCBO): 60 V
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Max Emitter-Base Voltage (VEBO): 6 V
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Max Power Dissipation (PD): 300 mW
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Max Transition Frequency (fT): 300 MHz
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DC Current Gain (hFE): 100 - 300
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Storage & Operating temperature: -55 to +150 Centigrade
MMBT3904LT1G Advantages
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Pb−Free, Halogen Free/BFR Free, and RoHS Compliant
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S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
Specifications
ON Semiconductor MMBT3904LT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MMBT3904LT1G.
MMBT3904LT1G Tech Specifications
MMBT3904LT1G Tech Specifications
ON Semiconductor MMBT3904LT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MMBT3904LT1G.
| Product Attribute | Attribute Value | |
|---|---|---|
| Lifecycle Status | ACTIVE (Last Updated: 4 days ago) | |
| Factory Lead Time | 10 Weeks | |
| Contact Plating | Tin | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Surface Mount | YES | |
| Number of Pins | 3Pins | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 40V | |
| Collector-Emitter Saturation Voltage | 200mV | |
| Number of Elements | 1 Element | |
| hFEMin | 100 | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2006 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Active |
| Product Attribute | Attribute Value | |
|---|---|---|
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Type | General Purpose | |
| Voltage - Rated DC | 40V | |
| Max Power Dissipation | 300mW | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Current Rating | 200mA | |
| Frequency | 300MHz | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Base Part Number | MMBT3904 | |
| Pin Count | 3 | |
| Element Configuration | Single | |
| Power Dissipation | 225mW | |
| Gain Bandwidth Product | 300MHz | |
| Transistor Type | NPN |
| Product Attribute | Attribute Value | |
|---|---|---|
| Collector Emitter Voltage (VCEO) | 40V | |
| Max Collector Current | 200mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA 1V | |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 5mA, 50mA | |
| Transition Frequency | 300MHz | |
| Max Breakdown Voltage | 40V | |
| Collector Base Voltage (VCBO) | 60V | |
| Emitter Base Voltage (VEBO) | 6V | |
| Max Junction Temperature (Tj) | 150°C | |
| Turn Off Time-Max (toff) | 250ns | |
| Turn On Time-Max (ton) | 70ns | |
| Height | 1.11mm | |
| Length | 2.9mm | |
| Width | 1.3mm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
MMBT3904LT1G Test Circuits
MMBT3904LT1G Delay and Rise Time Equivalent Test Circuit
MMBT3904LT1G Storage and Fall Time Equivalent Test Circuit
MMBT3904LT1G Functional Alternatives
MMBT3904LT1G Applications
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General Purpose Switching
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Signal Processing
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Industrial
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Automotive
MMBT3904LT1G Package
MMBT3904LT1G Package & Dimensions
MMBT3904LT1G Recommended Soldering Footprint
MMBT3904LT1G Manufacturer
ON Semiconductor (Nasdaq: ON) is driving energy-efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy-efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace, and power supply applications. ON Semiconductor operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices, and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.
Datasheet PDF
Download datasheets and manufacturer documentation for ON Semiconductor MMBT3904LT1G.
MMBT3904LT1G Documents
MMBT3904LT1G Documents
Download datasheets and manufacturer documentation for MMBT3904LT1G
ReachStatement
ON-Semiconductor-company-79.pdf
PCN Assembly/Origin
Mult Dev Wafer Add 16/Nov/2018
Environmental Information
Material Declaration MMBT3904LT1G
Frequently Asked Questions
1.What is MMBT3904LT1G?
The MMBT3904LT1G is an NPN silicon bipolar transistor designed for use in linear, lower power surface mount and switching applications.
2.What is NPN bipolar transistor?
An NPN transistor is the most commonly used bipolar junction transistor and is constructed by sandwiching a P-type semiconductor between two N-type semiconductors. An NPN transistor has three terminals - a collector, emitter, and base. The NPN transistor behaves like two PN junctions diodes connected back to back.
3.What is the difference between MMBT3904LT1G and MMBT3904LT1?
"G" stands for "green". The MMBT3904LT1G transistor is the lead-free version of the MMBT3904LT1.
FAQ
1.What is MMBT3904LT1G?
The MMBT3904LT1G is an NPN silicon bipolar transistor designed for use in linear, lower power surface mount and switching applications.
2.What is NPN bipolar transistor?
An NPN transistor is the most commonly used bipolar junction transistor and is constructed by sandwiching a P-type semiconductor between two N-type semiconductors. An NPN transistor has three terminals - a collector, emitter, and base. The NPN transistor behaves like two PN junctions diodes connected back to back.
3.What is the difference between MMBT3904LT1G and MMBT3904LT1?
"G" stands for "green". The MMBT3904LT1G transistor is the lead-free version of the MMBT3904LT1.
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