Trans MOSFET P-CH 60V 30A 3-Pin(2+Tab) D2PAK T/R The MTB30P06VT4G Power MOSFET is designed to withstand high energy in the avalanche and commutation modes.
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Apr 29, 2022
Adair Toland
How Does a MOSFET Work?
Trans MOSFET P-CH 60V 30A 3-Pin(2 Tab) D2PAK T/R
The MTB30P06VT4G Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Furthermore, Huge range of Semiconductors, Capacitors, Resistors and IcS in stock. Welcome RFQ.
MTB30P06VT4G
The following figure is the diagram of MTB30P06VT4G Pinout.
Pinout
The MTB30P06VT4G Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
This article provides you with a basic overview of the MTB30P06VT4G MOSFET, including its pin descriptions, features and specifications, etc., to help you quickly understand what MTB30P06VT4G is.
• Avalanche Energy Specified
• IDSS and VDS(on) Specified at Elevated Temperature
• AEC−Q101 Qualified and PPAP Capable − MTBV30P06V
• These Devices are Pb−Free and are RoHS Compliant
ON Semiconductor MTB30P06VT4G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MTB30P06VT4G.
ON Semiconductor MTB30P06VT4G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MTB30P06VT4G.
| Product Attribute | Attribute Value | |
|---|---|---|
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 3 days ago) | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | |
| Surface Mount | YES | |
| Number of Pins | 3Pins | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 30A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 3W Ta 125W Tc | |
| Turn Off Delay Time | 98 ns | |
| Operating Temperature | -55°C~175°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2006 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 2Terminations |
| Product Attribute | Attribute Value | |
|---|---|---|
| ECCN Code | EAR99 | |
| Resistance | 80MOhm | |
| Terminal Finish | Tin (Sn) | |
| Additional Feature | AVALANCHE RATED | |
| Voltage - Rated DC | -60V | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Current Rating | -30A | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Pin Count | 3 | |
| JESD-30 Code | R-PSSO-G2 | |
| Element Configuration | Single | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 3W | |
| Case Connection | DRAIN | |
| Turn On Delay Time | 14.7 ns | |
| FET Type | P-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 80m Ω @ 15A, 10V |
| Product Attribute | Attribute Value | |
|---|---|---|
| Vgs(th) (Max) @ Id | 4V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 2190pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 80nC @ 10V | |
| Rise Time | 25.9ns | |
| Drain to Source Voltage (Vdss) | 60V | |
| Vgs (Max) | ±15V | |
| Fall Time (Typ) | 52.4 ns | |
| Continuous Drain Current (ID) | 30A | |
| Gate to Source Voltage (Vgs) | 15V | |
| Drain to Source Breakdown Voltage | -60V | |
| Avalanche Energy Rating (Eas) | 450 mJ | |
| Nominal Vgs | -2.6 V | |
| Height | 4.83mm | |
| Length | 10.29mm | |
| Width | 9.65mm | |
| REACH SVHC | Unknown | |
| Radiation Hardening | No | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |
| Model number | Manufacturer | Description |
| MTBV30P06VT4G | On Semiconductor | Power MOSFET -60V -30A 80 mOhm Single P-Channel D2PAK, D2PAK 2 LEAD, 800-REEL |
| AUIRFU5305 | Infineon Technologies AG | Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, ROHS COMPLIANT, PLASTIC, IPAK-3 |
| UTT25P06L-TN3-R | Unisonic Technologies Co Ltd | Power Field-Effect Transistor, 27.5A I(D), 60V, 0.082ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE PACKAGE-3 |
| MTB30P06VG | On Semiconductor | TRANSISTOR 30 A, 60 V, 0.08 ohm, P-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, CASE 418B-04, D2PAK-3, FET General Purpose Power |
| UTT25P06G-TN3-R | Unisonic Technologies Co Ltd | Power Field-Effect Transistor, 27.5A I(D), 60V, 0.082ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE PACKAGE-3 |
| SPU30P06P | Infineon Technologies AG | Power Field-Effect Transistor, 30A I(D), 60V, 0.075ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, ROHS COMPLIANT PACKAGE-3 |
| SPD30P06PGBTMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 30A I(D), 60V, 0.075ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3 |
| SPD30P06P | Infineon Technologies AG | Power Field-Effect Transistor, 30A I(D), 60V, 0.075ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT PACKAGE-3 |
| UTT25P06G-TN3-T | Unisonic Technologies Co Ltd | Power Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET |
The following diagrams show the MTB30P06VT4G Package.
View A
View B
View C
The following diagram shows the MTB30P06VT4G Marking Diagram.
Marking Diagram
The following is the Soldering Footprint of MTB30P06VT4G.
Soldering Footprint
ON Semiconductor (Nasdaq: ON) is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. ON Semiconductor operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.
Download datasheets and manufacturer documentation for ON Semiconductor MTB30P06VT4G.
Download datasheets and manufacturer documentation for MTB30P06VT4G
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