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HomeCommunitySubjectMX25R8035FZUIL0 Flash Memory: Features, Pinout, and Datasheet

MX25R8035FZUIL0 Flash Memory: Features, Pinout, and Datasheet

Memory Non-Volatile 8-UFDFN Exposed Pad 8Mb 1M x 8 FLASH -40°C~85°C TA 1.65V~3.6V SPI 1.8V 33MHz 0.5mm IC FLASH 8M SPI 33MHZ 8USON

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Dec 17, 2021

Elvis Meredith

What Is Flash Memory?

 

Memory Non-Volatile 8-UFDFN Exposed Pad 8Mb 1M x 8 FLASH -40°C~85°C TA 1.65V~3.6V SPI 1.8V 33MHz 0.5mm IC FLASH 8M SPI 33MHZ 8USON

MX25R8035F is an 8MB Serial NOR Flash memory with an internal configuration of 1,048,576 x 8. The structure becomes 2,097,152 bits x 4 or 4,194,304 bits x 2 when it is in four I/O modes. This article mainly introduces features, pinout, datasheet and other detailed information about Macronix MX25R8035FZUIL0.

MX25R8035FZUIL0

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MX25R8035FZUIL0 Description

MX25R8035F is an 8MB Serial NOR Flash memory with an internal configuration of 1,048,576 x 8. The structure becomes 2,097,152 bits x 4 or 4,194,304 bits x 2 when it is in four  I/O  mode.

In single I/O mode, the MX25R8035F has a serial peripheral interface and software protocol that allows it to operate on a basic 3-wire bus. A clock input (SCLK), a serial data input (SI), and a serial data output (SDO) are the three bus signals (SO). CS# input allows serial access to the device.

The SI and SO pins become SIO0 and SIO1 pins for address/dummy bits input and data output when it is in two I/O read modes. The SI pin, SO pin, WP# pin, and RESET#/HOLD# pin become SIO0 pin, SIO1 pin,  SIO2  pin, and SIO3 pin for address/dummy bits input and data output when it is in four I/O read mode.

On the full chip, the MX25R8035F MXSMIO® (Serial Multi I/O) allows sequential read operation.

After issuing the program/erase command, auto program/erase algorithms will be executed, which will program/erase and validate the given page, sector, or block locations. The program command is carried out on a byte, page (256 bytes), or word basis. The Erase command can be used to erase a 4K-byte sector, a 32K-byte block, a 64K-byte block, or the entire chip.

A status register is included to improve user convenience by indicating the chip's status. The status read command can be used to determine whether a program or erase operation is complete using the WIP bit.

Advanced security features improve the protection and security functions; for more information, read the security features section  .

The MX25R8035F utilizes  Macronix 's proprietary memory cell, which reliably stores memory contents even after 100,000 program and erase cycles.

MX25R8035FZUIL0 Pinout

The following figure is MX25R8035FZUIL0 Pinout.

MX25R8035FZUIL0 CAD Model

The following figures are MX25R8035FZUIL0 Symbol and Footprint.

Symbol

Footprint

MX25R8035FZUIL0 Features

• Ultra-Low Power Mode and High-Performance Mode

• Wide Range VCC 1.65V-3.6V for Read, Erase and Program Operations

• Unique ID and Secure OTP Support

• Multi I/O Support - Single I/O, Dual I/O and Quad I/O

• Program Suspend/Resume & Erase Suspend/Resume

 

Specifications

Macronix MX25R8035FZUIL0 technical specifications, attributes, parameters and parts with similar specifications to Macronix MX25R8035FZUIL0.

MX25R8035FZUIL0 Tech Specifications

Macronix MX25R8035FZUIL0 technical specifications, attributes, parameters and parts with similar specifications to Macronix MX25R8035FZUIL0.

Product Attribute Attribute Value
Factory Lead Time10 Weeks
Mounting TypeSurface Mount
Package / Case8-UFDFN Exposed Pad
Surface MountYES
Memory TypesNon-Volatile
Operating Temperature-40°C~85°C TA
PackagingCut Tape (CT)
SeriesMXSMIO™
Published2017
Part StatusActive
Moisture Sensitivity Level (MSL)3 (168 Hours)
Number of Terminations8Terminations
Additional FeatureIT IS ALSO CONFIGURED AS 8M X 1
Voltage - Supply1.65V~3.6V
Product Attribute Attribute Value
Terminal PositionDUAL
Peak Reflow Temperature (Cel)NOT SPECIFIED
Number of Functions1Function
Supply Voltage1.8V
Terminal Pitch0.5mm
Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
JESD-30 CodeR-PDSO-N8
Supply Voltage-Max (Vsup)3.6V
Supply Voltage-Min (Vsup)1.65V
Memory Size8Mb 1M x 8
Operating ModeSYNCHRONOUS
Clock Frequency33MHz
Access Time12 ns
Memory FormatFLASH
Product Attribute Attribute Value
Memory InterfaceSPI
Organization2MX4
Memory Width4
Write Cycle Time - Word, Page100μs, 10ms
Memory Density8388608 bit
Parallel/SerialSERIAL
Programming Voltage1.8V
Alternate Memory Width2
Ambient Temperature Range High85°C
Height600μm
Length3mm
Width2mm
RoHS StatusROHS3 Compliant
Lead FreeLead Free
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MX25R8035FZUIL0 Functional Block Diagram

MX25R8035FZUIL0 Functional Block Diagram is shown as follows.

Functional Block Diagram

MX25R8035FZUIL0 Part Name Description

The following figure is MX25R8035FZUIL0 Part Name Description.

Part Name Description

MX25R8035FZUIL0 Package

The following figure is MX25R8035FZUIL0 Package.

Package

MX25R8035FZUIL0 Manufacturer

Macronix, a prominent non-volatile memory (NVM) integrated device maker, offers a full range of NOR Flash, NAND Flash, and ROM solutions. Macronix continues to provide high-quality, innovative, and performance-driven products to its clients in the consumer, communication, computer, automotive, networking, and other segment markets, thanks to its world-class R&D and manufacturing capabilities.

Datasheet PDF

MX25R8035FZUIL0 Documents

Download datasheets and manufacturer documentation for MX25R8035FZUIL0

Frequently Asked Questions

Is flash memory RAM or ROM?
Is Flash memory RAM or ROM? RAM is Read-Only Memory. Unlike RAM, ROM is persistent storage. Flash Memory is one category of ROM i.e Electrically Erasable Read Only Memory (EEPROM).
What is flash memory and how does it work?
Flash memory is a type of erasable read-only memory (EEPROM) that clears and rewrites data in chunks for fast, energy-efficient access and rewriting. Flash memory, or flash storage, is non-volatile, which means it remains viable even without an active power source.
Why is it called flash memory?
According to Toshiba, the name "flash" was suggested by Masuoka's colleague, Shōji Ariizumi, because the erasure process of the memory contents reminded him of the flash of a camera.
FAQ
Is flash memory RAM or ROM?
Is Flash memory RAM or ROM? RAM is Read-Only Memory. Unlike RAM, ROM is persistent storage. Flash Memory is one category of ROM i.e Electrically Erasable Read Only Memory (EEPROM).
What is flash memory and how does it work?
Flash memory is a type of erasable read-only memory (EEPROM) that clears and rewrites data in chunks for fast, energy-efficient access and rewriting. Flash memory, or flash storage, is non-volatile, which means it remains viable even without an active power source.
Why is it called flash memory?
According to Toshiba, the name "flash" was suggested by Masuoka's colleague, Shōji Ariizumi, because the erasure process of the memory contents reminded him of the flash of a camera.

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