PMDXB950UPE is a dual P-channel enhancement mode Field-Effect Transistor. This article is going to talk about the features, applications, and more detailed information about PMDXB950UPE.
PMDXB950UPE 20 V dual P-channel Trench MOSFET[FAQ]
PMDXB950UPE is a dual P-channel enhancement mode Field-Effect Transistor. This article is going to talk about the features, applications, and more detailed information about PMDXB950UPE.
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Apr 22, 2022
Sam Thomson
PMDXB950UPE
30000In Stock
Min.: 1 Mult.: 1
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Overview of PMDXB950UPE
PMDXB950UPE Dual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
PMDXB950UPE Features
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Trench MOSFET technology
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Leadless ultra-small and ultra-thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
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Exposed drain pad for excellent thermal conduction
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ElectroStatic Discharge (ESD) protection > 1 kV HBM
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Drain-source on-state resistance RDSon = 1.02 Ω
PMDXB950UPE Parameters
| Type Designator: PMDXB950UPE |
| Type of Transistor: MOSFET |
| Type of Control Channel: P -Channel |
| Maximum Power Dissipation (Pd): 0.265 W |
| Maximum Drain-Source Voltage |Vds|: 20 V |
| Maximum Gate-Source Voltage |Vgs|: 8 V |
| Maximum Gate-Threshold Voltage |Vgs(th)|: 0.95 V |
| Maximum Drain Current |Id|: 0.5 A |
| Maximum Junction Temperature (Tj): 150 °C |
| Total Gate Charge (Qg): 1.19 NC |
| Rise Time (tr): 5 nS |
| Drain-Source Capacitance (Cd): 14 pF |
| Maximum Drain-Source On-State Resistance (Rds): 1.4 Ohm |
| Package: DFN1010B-6 |
PMDXB950UPE Pinout
PMDXB950UPE Pinout
PMDXB950UPE CAD Model
PMDXB950UPE Symbol
PMDXB950UPE Footprint
Specifications
Nexperia PMDXB950UPE technical specifications, attributes, parameters and parts with similar specifications to Nexperia PMDXB950UPE.
PMDXB950UPE Tech Specifications
PMDXB950UPE Tech Specifications
Nexperia PMDXB950UPE technical specifications, attributes, parameters and parts with similar specifications to Nexperia PMDXB950UPE.
| Product Attribute | Attribute Value | |
|---|---|---|
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Product Attribute | Attribute Value | |
|---|---|---|
| Terminal Finish | Tin (Sn) | |
| Reach Compliance Code | compliant |
| Product Attribute | Attribute Value | |
|---|---|---|
| RoHS Status | RoHS Compliant |
PMDXB950UPE Marking
PMDXB950UPE Marking
PMDXB950UPE Soldering
PMDXB950UPE Soldering
PMDXB950UPE Applications
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Relay driver
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High-speed line driver
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High-side load switch
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Switching circuits
PMDXB950UPE Package information
PMDXB950UPE Package information
PMDXB950UPE Manufacturer
Nexperia is a focused global leader in the fields of discretes, logic, and MOSFETs. At the start of 2017, this new company became self-sufficient. Nexperia focuses on efficiency and manufactures a high amount of dependably dependable semiconductor components: 85 billion per year. The company's comprehensive portfolio fulfills the Automotive industry's strict standards. And their industry-leading compact packages, which are built in-house, combine power and thermal efficiency with best-in-class quality. Nexperia has 11,000 personnel spread across Asia, Europe, and the United States, supporting customers all over the world.
Frequently Asked Questions
What’ s the Maximum Power Dissipation of PMDXB950UPE?
0.265 W.
What’s the Maximum Drain-Source Voltage of PMDXB950UPE?
20 V.
What’s the Rise Time of PMDXB950UPE?
5 nS.
What’s the Maximum Drain Current of PMDXB950UPE?
0.5A.
FAQ
What’ s the Maximum Power Dissipation of PMDXB950UPE?
0.265 W.
What’s the Maximum Drain-Source Voltage of PMDXB950UPE?
20 V.
What’s the Rise Time of PMDXB950UPE?
5 nS.
What’s the Maximum Drain Current of PMDXB950UPE?
0.5A.
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