NEXPERIA - PMV40UN2R - MOSFET Transistor, N Channel, 4.4 A, 30 V, 0.036 ohm, 4.5 V, 650 mV
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Feb 3, 2022
Arno Jennings
NEXPERIA - PMV40UN2R - MOSFET Transistor, N Channel, 4.4 A, 30 V, 0.036 ohm, 4.5 V, 650 mV
PMV40UN2R is an N-channel enhancement mode Field-Effect Transistor (FET). This post will cover its datasheet, Pinout, feature and more details about PMV40UN2R.
PMV40UN2R
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.32787 | $0.33 |
| 10+ | $0.30931 | $3.09 |
| 100+ | $0.2918 | $29.18 |
| 500+ | $0.27528 | $137.64 |
| 1000+ | $0.2597 | $259.7 |
PMV40UN2R is an N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
• Trench MOSFET technology
• Low threshold voltage
• Very fast switching
• Enhanced power dissipation capability of 1000 mW
• LED driver
• Power management
• Low-side load switch
• Switching circuits
The following circuit shows the test circuit of PMV40UN2R
PMV40UN2R Package
Nexperia is a dedicated global leader in Discretes, Logic and MOSFETs devices. This new company became independent at the beginning of 2017. Focused on efficiency, Nexperia produces consistently reliable semiconductor components at a high volume: 85 billion annually. The company’s extensive portfolio meets the stringent standards set by the Automotive industry. And industry-leading small packages, produced in their own manufacturing facilities, combine power and thermal efficiency with best-in-class quality levels. Built on over half a century of expertise, Nexperia has 11,000 employees across Asia, Europe and the U.S. supporting
Nexperia USA Inc. PMV40UN2R technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PMV40UN2R.
Nexperia USA Inc. PMV40UN2R technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PMV40UN2R.
| Product Attribute | Attribute Value | |
|---|---|---|
| Factory Lead Time | 4 Weeks | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Mounting Type | Surface Mount | |
| Mount | Surface Mount | |
| Transistor Element Material | SILICON | |
| Turn Off Delay Time | 34 ns | |
| Power Dissipation (Max) | 490mW Ta | |
| Number of Elements | 1 Element | |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V 4.5V | |
| Current - Continuous Drain (Id) @ 25℃ | 3.7A Ta | |
| Published | 1997 | |
| Packaging | Tape & Reel (TR) | |
| Operating Temperature | -55°C~150°C TJ | |
| JESD-609 Code | e3 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Product Attribute | Attribute Value | |
|---|---|---|
| Number of Terminations | 3Terminations | |
| Resistance | 36mOhm | |
| Terminal Finish | Tin (Sn) | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Pin Count | 3 | |
| JESD-30 Code | R-PDSO-G3 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Number of Channels | 1Channel | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 490mW | |
| Turn On Delay Time | 9 ns | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING |
| Product Attribute | Attribute Value | |
|---|---|---|
| Rds On (Max) @ Id, Vgs | 44m Ω @ 3.7A, 4.5V | |
| Vgs(th) (Max) @ Id | 900mV @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 635pF @ 15V | |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 4.5V | |
| Vgs (Max) | ±12V | |
| Continuous Drain Current (ID) | 3.7A | |
| Threshold Voltage | 400mV | |
| JEDEC-95 Code | TO-236AB | |
| Gate to Source Voltage (Vgs) | 12V | |
| Drain to Source Breakdown Voltage | 30V | |
| Max Junction Temperature (Tj) | 150°C | |
| Ambient Temperature Range High | 150°C | |
| Height | 1.1mm | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
Download datasheets and manufacturer documentation for PMV40UN2R
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