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PMV65XP Trench MOSFET: Datasheet, Alternatives, Pinout, SOT-23

Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 2.8A TO236AB PMV65XP is a 20 V, single P-channel Trench MOSFET. This article mainly covers its datasheet, alternatives, pinout and more details about PMV65XP.

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Dec 13, 2021

Burke Bryan

Introduction to Field-Effect Transistors (FETs)

Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 2.8A TO236AB

PMV65XP is a 20 V, single P-channel Trench MOSFET. This article mainly covers its datasheet, alternatives, pinout and more details about PMV65XP.

PMV65XPVL

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PMV65XP Pinout

PMV65XP CAD Model

PMV65XP Symbol

 

PMV65XP Footprint

 

PMV65XP 3D Model

PMV65XP Description

PMV65XP is a P-channel enhancement mode Field-Effect Transistor  (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET  technology.

PMV65XP Feature

• Low threshold voltage
• Low on-state resistance
• Trench MOSFET technology

PMV65XP Application

• Low power DC-to-DC converters 

• Load switching 

• Battery management 

• Battery-powered portable equipment

PMV65XP Alternatives

The alternatives for PMV65XP:

  • PMV65XPVL

  • PMV65XP,215

 

Specifications

Nexperia USA Inc. PMV65XPVL technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PMV65XPVL.

PMV65XPVL Tech Specifications

Nexperia USA Inc. PMV65XPVL technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PMV65XPVL.

Product Attribute Attribute Value
Factory Lead Time4 Weeks
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Surface MountYES
Transistor Element MaterialSILICON
Current - Continuous Drain (Id) @ 25℃2.8A Ta
Drive Voltage (Max Rds On, Min Rds On)1.8V 4.5V
Number of Elements1 Element
Power Dissipation (Max)480mW Ta
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published2013
Product Attribute Attribute Value
Part StatusActive
Number of Terminations3Terminations
Terminal PositionDUAL
Terminal FormGULL WING
Pin Count3
Reference StandardIEC-60134
JESD-30 CodeR-PDSO-G3
ConfigurationSINGLE WITH BUILT-IN DIODE
Operating ModeENHANCEMENT MODE
FET TypeP-Channel
Transistor ApplicationSWITCHING
Rds On (Max) @ Id, Vgs74m Ω @ 2.8A, 4.5V
Product Attribute Attribute Value
Vgs(th) (Max) @ Id900mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds744pF @ 20V
Gate Charge (Qg) (Max) @ Vgs7.7nC @ 4V
Drain to Source Voltage (Vdss)20V
Vgs (Max)±12V
JEDEC-95 CodeTO-236AB
Drain Current-Max (Abs) (ID)2.8A
Drain-source On Resistance-Max0.074Ohm
DS Breakdown Voltage-Min20V
RoHS StatusROHS3 Compliant
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PMV65XP Package

PMV65XP Manufacturer

Nexperia is a dedicated global leader in DiscretesLogic and MOSFETs devices. This new company became independent at the beginning of 2017. Focused on efficiency, Nexperia produces consistently reliable semiconductor components at a high volume: 85 billion annually. The company’s extensive portfolio meets the stringent standards set by the Automotive industry. And industry-leading small packages, produced in their own manufacturing facilities, combine power and thermal efficiency with best-in-class quality levels. Built on over half a century of expertise, Nexperia has 11,000  employees across Asia, Europe and the U.S. supporting customers globally.

Datasheet PDF

PMV65XPVL Documents

Download datasheets and manufacturer documentation for PMV65XPVL

Frequently Asked Questions

What is P channel in MOSFET?
A P-Channel MOSFET is a type of MOSFET in which the channel of the MOSFET is composed of a majority of holes as current carriers. When the MOSFET is activated and is on, the majority of the current flowing are holes moving through the channels.
How does MOSFET P channel work?
In a P-channel device, the conventional flow of drain current is in the negative direction so a negative gate-source voltage is applied to switch the transistor “ON”. This is achieved because the P-channel MOSFET is “upside-down” with its source terminal tied to the positive supply +VDD.
Why FET is called field effect transistor?
The concept of the field-effect transistor is based on the concept that a charge on a nearby object can attract charges within a semiconductor channel. It essentially operates using an electric field effect - hence the name.
What are types of FET?
FETs are subdivided into three different types: insulated gate FETs (better known as MOSFETs), junction FETs (JFETs), and metal-semiconductor FET (MESFET).
FAQ
What is P channel in MOSFET?
A P-Channel MOSFET is a type of MOSFET in which the channel of the MOSFET is composed of a majority of holes as current carriers. When the MOSFET is activated and is on, the majority of the current flowing are holes moving through the channels.
How does MOSFET P channel work?
In a P-channel device, the conventional flow of drain current is in the negative direction so a negative gate-source voltage is applied to switch the transistor “ON”. This is achieved because the P-channel MOSFET is “upside-down” with its source terminal tied to the positive supply +VDD.
Why FET is called field effect transistor?
The concept of the field-effect transistor is based on the concept that a charge on a nearby object can attract charges within a semiconductor channel. It essentially operates using an electric field effect - hence the name.
What are types of FET?
FETs are subdivided into three different types: insulated gate FETs (better known as MOSFETs), junction FETs (JFETs), and metal-semiconductor FET (MESFET).

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