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DIODE GEN PURP 400V 1A PMDTM
RF101 is a super- fast recovery diode with low forward voltage and low switching loss, suitable for general rectification. This article mainly covers its pinout, datasheet and more detailed information about RF101.
DIODE GEN PURP 400V 1A PMDTM RF101 is a super- fast recovery diode with low forward voltage and low switching loss, suitable for general rectification.
85
Jul 15, 2021
Nick House
![]()
DIODE GEN PURP 400V 1A PMDTM
RF101 is a super- fast recovery diode with low forward voltage and low switching loss, suitable for general rectification. This article mainly covers its pinout, datasheet and more detailed information about RF101.
RF101 is a super- fast recovery diode with low forward voltage and low switching loss, suitable for general rectification. And its operating temperature range -55C to 150 ℃.

Ultra low VF very fast recovery
Fast recovery
Low switching loss
ROHM Semiconductor RF101LAM4STR technical specifications, attributes, parameters and parts with similar specifications to ROHM Semiconductor RF101LAM4STR.
ROHM Semiconductor RF101LAM4STR technical specifications, attributes, parameters and parts with similar specifications to ROHM Semiconductor RF101LAM4STR.
| Product Attribute | Attribute Value | |
|---|---|---|
| Factory Lead Time | 20 Weeks | |
| Mounting Type | Surface Mount | |
| Package / Case | SOD-128 | |
| Surface Mount | YES | |
| Diode Element Material | SILICON | |
| Number of Elements | 1 Element | |
| Operating Temperature (Max.) | 150°C | |
| Packaging | Tape & Reel (TR) | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Product Attribute | Attribute Value | |
|---|---|---|
| Number of Terminations | 2Terminations | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.10.00.80 | |
| Terminal Position | DUAL | |
| Terminal Form | FLAT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| JESD-30 Code | R-PDSO-F2 | |
| Configuration | SINGLE | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Product Attribute | Attribute Value | |
|---|---|---|
| Diode Type | Standard | |
| Current - Reverse Leakage @ Vr | 10μA @ 400V | |
| Voltage - Forward (Vf) (Max) @ If | 1.25V @ 1A | |
| Operating Temperature - Junction | 150°C Max | |
| Output Current-Max | 1A | |
| Voltage - DC Reverse (Vr) (Max) | 400V | |
| Current - Average Rectified (Io) | 1A | |
| Reverse Recovery Time | 25ns | |
| Rep Pk Reverse Voltage-Max | 400V | |
| RoHS Status | ROHS3 Compliant |
Diode in Forward Bias

Diode in Reverse Bias



ROHM was established in Kyoto, Japan, in 1958. ROHM designs and manufactures semiconductors, integrated circuits and other electronic components. These components find a home in the dynamic and ever-growing wireless, computer, automotive and consumer electronics markets. Some of the most innovative equipment and devices use ROHM products.
Download datasheets and manufacturer documentation for ROHM Semiconductor RF101LAM4STR.
Download datasheets and manufacturer documentation for RF101LAM4STR
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