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RFP30N06LE Power MOSFET: Equivalent, Circuit, and Datasheet

MOSFET N-CH 60V 30A TO-220AB

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Aug 10, 2021

Bridget Warner

N-Channel MOSFET as a Switch. Turn ON a 12V Motor with Arduino. (Step-By-Step Guide)

 

MOSFET N-CH 60V 30A TO-220AB

The RFP30N06LE is an N-Channel logic-level power MOSFET manufactured using the MegaFET process.

RFP30N06LE

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RFP30N06LE Description

The RFP30N06LE is an N-Channel logic-level power MOSFET manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. The RFP30N06LE is designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. It can also be operated directly from integrated circuits. The RFP30N06LE incorporates ESD protection and is designed to withstand 2kV (Human Body Model) of ESD.

RFP30N06LE Pinout

RFP30N06LE CAD Model

Symbol

 

Footprint

 

3D Model

RFP30N06LE Features

  • Package Type: TO-220

  • Transistor Type: N Channel

  • Drain to Source Voltage: 60 V

  • Drain to Gate Voltage (RGS = 20kΩ): 60 V

  • Continuous Drain Current: 30 A

  • Drain to Source On Resistance: 0.047 Ω

  • Power Dissipation: 96 W

  • Operating and Storage Temperature: -55 to 175 °C

RFP30N06LE Advantages

  • rDS(ON) = 0.047Ω

  • 2kV ESD Protected

  • Temperature Compensating PSPICE® Model

  • Peak Current vs Pulse Width Curve

  • UIS Rating Curve

Specifications

ON Semiconductor RFP30N06LE technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor RFP30N06LE.

RFP30N06LE Tech Specifications

ON Semiconductor RFP30N06LE technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor RFP30N06LE.

Product Attribute Attribute Value
MountThrough Hole
Mounting TypeThrough Hole
Package / CaseTO-220-3
Number of Pins3Pins
Supplier Device PackageTO-220-3
Current - Continuous Drain (Id) @ 25℃30A Ta
Drive Voltage (Max Rds On, Min Rds On)5V
Number of Elements1 Element
Power Dissipation (Max)96W Tc
Turn Off Delay Time30 ns
Operating Temperature-55°C~175°C TJ
PackagingTube
Published2002
Part StatusObsolete
Moisture Sensitivity Level (MSL)1 (Unlimited)
Product Attribute Attribute Value
TerminationThrough Hole
Max Operating Temperature175°C
Min Operating Temperature-55°C
Voltage - Rated DC60V
Current Rating30A
Lead Pitch2.54mm
Element ConfigurationSingle
Power Dissipation96W
FET TypeN-Channel
Rds On (Max) @ Id, Vgs47mOhm @ 30A, 5V
Vgs(th) (Max) @ Id2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds1350pF @ 25V
Gate Charge (Qg) (Max) @ Vgs62nC @ 10V
Rise Time88ns
Drain to Source Voltage (Vdss)60V
Product Attribute Attribute Value
Vgs (Max)+10V, -8V
Fall Time (Typ)40 ns
Continuous Drain Current (ID)30A
Threshold Voltage2V
Gate to Source Voltage (Vgs)10V
Drain to Source Breakdown Voltage60V
Dual Supply Voltage60V
Input Capacitance1.35nF
Drain to Source Resistance47mOhm
Rds On Max47 mΩ
Nominal Vgs2 V
REACH SVHCNo SVHC
RoHS StatusRoHS Compliant
Lead FreeLead Free
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Where to use RFP30N06LE

The RFP30N06LE is a logic-level MOSFET that can be used in switch-mode power supply circuits and audio amplifiers. And for DC motor control using Arduino or a similar microcontroller. The RFP30N06LE is also widely used in low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery-operated products.

 

RFP30N06LE Test Circuits and Waveforms

RFP30N06LE Unclamped Energy Test Circuit & Waveforms

 

RFP30N06LE Switching Time Test Circuit & Waveforms

 

RFP30N06LE Gate Charge Test Circuit & Waveforms

 

RFP30N06LE Applications

  • Switching regulators

  • Switching converters

  • Power management

  • Motor drives

  • Relay drivers

  • Audio amplifiers

RFP30N06LE Package

RFP30N06LE Manufacturer

ON Semiconductor (Nasdaq: ON) is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. ON Semiconductor operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.

Datasheet PDF

Download datasheets and manufacturer documentation for ON Semiconductor RFP30N06LE.

RFP30N06LE Documents

Download datasheets and manufacturer documentation for RFP30N06LE

Frequently Asked Questions

1.What is RFP30N06LE?
The RFP30N06LE is an N-Channel logic-level power MOSFET manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance.
2.What is an N channel MOSFET?
N-Channel MOSFET is a type of metal oxide semiconductor field-effect transistor that is categorized under the field-effect transistors (FET). This type of transistor is also known as an insulated-gate field-effect transistor (IGFET). Sometimes it is also known as a metal-insulator field-effect transistor (MIFET).
FAQ
1.What is RFP30N06LE?
The RFP30N06LE is an N-Channel logic-level power MOSFET manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance.
2.What is an N channel MOSFET?
N-Channel MOSFET is a type of metal oxide semiconductor field-effect transistor that is categorized under the field-effect transistors (FET). This type of transistor is also known as an insulated-gate field-effect transistor (IGFET). Sometimes it is also known as a metal-insulator field-effect transistor (MIFET).

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