SST25VF020B SPI Serial Flash: Pinout, Equivalent and Datasheet

The following figure is the diagram of SST25VF020B pinout.

Pinout

The followings are SST25VF020B Footprint, and 3D Model.

Footprint

3D Model

The 25 series Serial Flash family features a four-wire, SPI compatible interface that allows for a low pin count package which occupies less board space and ultimately lowers total system costs. The SST25VF020B devices are enhanced with improved operating frequency and even lower power consumption. SST25VF020B SPI serial Flash memories are manufactured with SST proprietary, high-performance CMOS SuperFlash^® technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST25VF020B devices significantly improve performance and reliability, while lowering power consumption. The devices write (Program or Erase) with a single power supply of 2.7V-3.6V for SST25VF020B. The total energy consumed is a function of the applied voltage, current and time of application. Since for any given voltage range the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any erase or program operation is less than alternative Flash memory technologies. The SST25VF020B SuperFlash memory array is organized in uniform 4-Kbyte erasable sectors with 32-Kbyte overlay blocks and 64-Kbyte overlay erasable blocks.

This article provides you with a basic overview of the SST25VF020B SPI Serial Flash, including its pin descriptions, features and specifications, etc., to help you quickly understand what SST25VF020B is.

● Single Voltage Read and Write Operations: 2.7V-3.6V

● Serial Interface Architecture:

   ◆ SPI Compatible: Mode 0 and Mode 3

● High-Speed Clock Frequency:

   ◆ Up to 80 MHz

● Superior Reliability:

   ◆ Endurance: 100,000 cycles

   ◆ Greater than 100 years data retention

● Low-Power Consumption:

   ◆ Active Read current: 10 mA (typical)

   ◆ Standby Current: 5 µA (typical)

● Flexible Erase Capability:

   ◆ Uniform 4-Kbyte sectors

   ◆ Uniform 32-Kbyte overlay blocks

   ◆ Uniform 64-Kbyte overlay blocks

● Fast Erase and Byte Program:

   ◆ Chip Erase time: 35 ms (typical)

   ◆ Sector/Block Erase time: 18 ms (typical)

   ◆ Byte Program time: 7 µs (typical)

● Auto Address Increment (AAI) Programming:

   ◆ Decrease total chip programming time over Byte Program operations

● End-of-Write Detection:

   ◆ Software polling the BUSY bit in STATUS register

   ◆ Busy Status readout on SO pin in AAI mode

● Hold Pin (HOLD#):

   ◆ Suspends a serial sequence to the memory without deselecting the device

● Write Protection (WP#):

   ◆ Enables/Disables the Lock-Down function of the STATUS register

● Software Write Protection:

   ◆ Write protection through Block Protection bits in STATUS register

● Temperature Ranges:

   ◆ Commercial: 0 ℃ to +70 ℃

   ◆ Industrial (I): -40 ℃ to +85 ℃

● All devices are RoHS compliant

Microchip Technology SST25VF020B-80-4I-SAE technical specifications, attributes, parameters and parts with similar specifications to Microchip Technology SST25VF020B-80-4I-SAE.

The following is the Block Diagram of SST25VF020B.

Functional Block Diagram

The following diagrams show the SST25VF020B package.

Top View

Side View

End View

The following is the Package Marking of SST25VF020B.

8-Lead SOIC (3.90 mm)

Example

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Download datasheets and manufacturer documentation for Microchip Technology SST25VF020B-80-4I-SAE.