MOSFET N-CH 60V 55A TO-220 Hello Everyone, this time I want to introduce a very powerful thing called MOSFET which is the latest development of STMicroelectronics unique "Single Feature Size".
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Sep 5, 2021
Byron Silas
MOSFET N-CH 60V 55A TO-220
Hello Everyone, this time I want to introduce a very powerful thing called MOSFET which is the latest development of STMicroelectronics unique "Single Feature Size". The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility
STP55NF06L
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.83132 | $1.83 |
| 10+ | $1.72766 | $17.28 |
| 100+ | $1.62987 | $162.99 |
| 500+ | $1.53761 | $768.81 |
| 1000+ | $1.45058 | $1450.58 |
This Power MOSFET STP55NF06L is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
■ Exceptional dv/dt capability
■ 100% avalanche tested
■ Application oriented characterization
STP55NF06L Order Code
STMicroelectronics STP55NF06L technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP55NF06L.
STMicroelectronics STP55NF06L technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP55NF06L.
| Product Attribute | Attribute Value | |
|---|---|---|
| Lifecycle Status | ACTIVE (Last Updated: 8 months ago) | |
| Factory Lead Time | 12 Weeks | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 | |
| Number of Pins | 3Pins | |
| Weight | 4.535924g | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 55A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V 5V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 95W Tc | |
| Turn Off Delay Time | 40 ns | |
| Operating Temperature | -55°C~175°C TJ | |
| Packaging | Tube | |
| Series | STripFET™ II | |
| JESD-609 Code | e3 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Product Attribute | Attribute Value | |
|---|---|---|
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Resistance | 18mOhm | |
| Terminal Finish | Matte Tin (Sn) | |
| Voltage - Rated DC | 60V | |
| Current Rating | 55A | |
| Base Part Number | STP55N | |
| Pin Count | 3 | |
| Element Configuration | Single | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 95W | |
| Case Connection | DRAIN | |
| Turn On Delay Time | 20 ns | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 18m Ω @ 27.5A, 10V | |
| Vgs(th) (Max) @ Id | 1.7V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 1700pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 37nC @ 4.5V |
| Product Attribute | Attribute Value | |
|---|---|---|
| Rise Time | 100ns | |
| Vgs (Max) | ±16V | |
| Fall Time (Typ) | 20 ns | |
| Continuous Drain Current (ID) | 55A | |
| Threshold Voltage | 1.7V | |
| JEDEC-95 Code | TO-220AB | |
| Gate to Source Voltage (Vgs) | 16V | |
| Drain to Source Breakdown Voltage | 60V | |
| Pulsed Drain Current-Max (IDM) | 220A | |
| Nominal Vgs | 1.7 V | |
| Height | 9.15mm | |
| Length | 10.4mm | |
| Width | 4.6mm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
STP55NF06L Functional Block Diagram
| Part Number | Describtion | Manufacturer |
| IXFK32N50QTRANSISTORS | Power Field-Effect Transistor, 32A I(D), 500V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC PACKAGE-3 | IXYS Corporation |
| NDP406BETRANSISTORS | TRANSISTOR 12 A, 60 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN, FET General Purpose Power | National Semiconductor Corporation |
| IPB070N06LGATMA1TRANSISTORS | Power Field-Effect Transistor, 80A I(D), 60V, 0.0067ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3 | Infineon Technologies AG |
| NDB705BETRANSISTORS | 70A, 50V, 0.018ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | Texas Instruments |
| NDP506BTRANSISTORS | TRANSISTOR 24 A, 60 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN, FET General Purpose Power | National Semiconductor Corporation |
| FDB24AN06LA0TRANSISTORS | Power Field-Effect Transistor, 7.8A I(D), 60V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263AB, 3 PIN | Fairchild Semiconductor Corporation |
| 2SK2504TLTRANSISTORS | Power Field-Effect Transistor, 5A I(D), 100V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CPT3, 3 PIN | ROHM Semiconductor |
| FQPF16N25CTRANSISTORS | Power Field-Effect Transistor, 15.6A I(D), 250V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN | Fairchild Semiconductor Corporation |
| FQB10N20CTMTRANSISTORS | Power Field-Effect Transistor, 9.5A I(D), 200V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK-3 | Fairchild Semiconductor Corporation |
| BUK762R0-40CTRANSISTORS | Power Field-Effect Transistor | Nexperia |
■ Switching application
ST is a leading supplier of many of the key technologies going into the next generations of consumer devices: Microcontrollers for low and ultra-low power processing, Secure solutions, Sensors and Actuators, Connectivity, Conditioning and Protection, Motor Control, and Power & Energy Management.
Download datasheets and manufacturer documentation for STMicroelectronics STP55NF06L.
Download datasheets and manufacturer documentation for STP55NF06L
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