Transistors - Bipolar (BJT) - Single TRANS NPN DARL 100V 2A TO-220 The TIP112 is a silicon Epitaxial-Base NPN transistor in a monolithic Darlington configuration mounted in Jedec TO-220 plastic package.
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Nov 5, 2021
Olivia Harrison
STMICROELECTRONICS TIP112
Transistors - Bipolar (BJT) - Single TRANS NPN DARL 100V 2A TO-220
The TIP112 is a silicon Epitaxial-Base NPN transistor in a monolithic Darlington configuration mounted in Jedec TO-220 plastic package. This article mainly covers pinout, datasheet pdf, circuit, schematics, power, and other details about the TIP112 transistor.
TIP112
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $2.09319 | $2.09 |
| 10+ | $1.97471 | $19.75 |
| 100+ | $1.86293 | $186.29 |
| 500+ | $1.75748 | $878.74 |
| 1000+ | $1.658 | $1658 |
TIP112 is a monolithic Darlington silicon epitaxial-based NPN transistor placed in a Jedec TO-220 plastic packaging. It is designed for linear and switching applications that require a moderate amount of power. TIP115 and TIP117 are complementary PNP types.
TIP112 Pinout
TIP112 Symbol
TIP112 Footprint
TIP112 3D Model
TIP112 Internal Schematics
STMicroelectronics TIP112 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics TIP112.
STMicroelectronics TIP112 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics TIP112.
| Product Attribute | Attribute Value | |
|---|---|---|
| Factory Lead Time | 8 Weeks | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 | |
| Number of Pins | 3Pins | |
| Weight | 6.000006g | |
| Transistor Element Material | SILICON | |
| Manufacturer Package Identifier | TO-220-P011 | |
| Collector-Emitter Breakdown Voltage | 100V | |
| Collector-Emitter Saturation Voltage | 2.5V | |
| Number of Elements | 1 Element | |
| hFEMin | 500 | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tube | |
| JESD-609 Code | e3 | |
| Part Status | Active |
| Product Attribute | Attribute Value | |
|---|---|---|
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Matte Tin (Sn) | |
| Voltage - Rated DC | 100V | |
| Max Power Dissipation | 2W | |
| Current Rating | 2A | |
| Base Part Number | TIP112 | |
| Pin Count | 3 | |
| Polarity | NPN | |
| Element Configuration | Single | |
| Power Dissipation | 2W | |
| Transistor Application | SWITCHING | |
| Transistor Type | NPN - Darlington | |
| Collector Emitter Voltage (VCEO) | 100V | |
| Max Collector Current | 2A |
| Product Attribute | Attribute Value | |
|---|---|---|
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 1A 4V | |
| Current - Collector Cutoff (Max) | 2mA | |
| JEDEC-95 Code | TO-220AB | |
| Vce Saturation (Max) @ Ib, Ic | 2.5V @ 8mA, 2A | |
| Collector Base Voltage (VCBO) | 100V | |
| Emitter Base Voltage (VEBO) | 5V | |
| Max Junction Temperature (Tj) | 150°C | |
| Height | 19.68mm | |
| Length | 10.4mm | |
| Width | 4.6mm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
STMicroelectronics Preferred Sales types
Monolithic Darlington Configuration
Complementary PNP - NPN Devices
Integrated Antiparallel Collector-Emitter Diode
Linear and switching industrial equipment
TIP115, TIP117, TIP110
TIP112 Package Dimensions
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Download datasheets and manufacturer documentation for TIP112
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