MOSFET P-CH 45V 230MA E-LINE BS250 is a P Channel enhancement-mode vertical D-MOS transistor manufactured in the TO-92 package. This article is going to explain guide details about BS250 transistor for your reference.
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Mar 25, 2022
Perry Jim
BS250 P channel enhancement mode MOSFET switch circuit electronics tutorial
MOSFET P-CH 45V 230MA E-LINE
BS250 is a P Channel enhancement-mode vertical D-MOS transistor manufactured in the TO-92 package. This article is going to explain guide details about BS250 transistor for your reference.
BS250P
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.39908 | $1.4 |
| 10+ | $1.31989 | $13.2 |
| 100+ | $1.24518 | $124.52 |
| 500+ | $1.1747 | $587.35 |
| 1000+ | $1.10821 | $1108.21 |
The BS250 is a TO-92 -packaged P Channel enhancement-mode vertical D-MOS transistor. The transistor's pin configuration is as follows: The Source pin is the first, the Gate pin is the second, and the Drain pin is the third.
The transistor's highest drain to source voltage is -45V; its continuous drain current is -0.25A or -250mA; its gate-source voltage is 20V, and its maximum power dissipation is 8300mW.
Because of its various characteristics, such as low threshold voltage, quick switching speed, and low on-resistance, the transistor can be utilized in a wide range of applications, including as a driver for relays, displays, memories, driving other transistors, and motor controllers. It's also suitable for a wide range of power supply applications. In addition, it will work well in low-voltage and battery-powered applications.
BS250 Pinout
BS250 Symbol
BS250 Footprint
Diodes Incorporated BS250P technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated BS250P.
| Product Attribute | Attribute Value | |
|---|---|---|
| Factory Lead Time | 17 Weeks | |
| Contact Plating | Tin | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | E-Line-3 | |
| Number of Pins | 3Pins | |
| Weight | 453.59237mg | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 230mA Ta | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 700mW Ta | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Bulk | |
| Published | 2006 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes |
| Product Attribute | Attribute Value | |
|---|---|---|
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Resistance | 14Ohm | |
| Voltage - Rated DC | -45V | |
| Terminal Position | BOTTOM | |
| Terminal Form | WIRE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Current Rating | -230mA | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Pin Count | 3 | |
| Qualification Status | Not Qualified | |
| Number of Channels | 1Channel | |
| Element Configuration | Single | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 700mW |
| Product Attribute | Attribute Value | |
|---|---|---|
| FET Type | P-Channel | |
| Rds On (Max) @ Id, Vgs | 14 Ω @ 200mA, 10V | |
| Vgs(th) (Max) @ Id | 3.5V @ 1mA | |
| Input Capacitance (Ciss) (Max) @ Vds | 60pF @ 10V | |
| Drain to Source Voltage (Vdss) | 45V | |
| Vgs (Max) | ±20V | |
| Continuous Drain Current (ID) | 230mA | |
| JEDEC-95 Code | TO-92 | |
| Gate to Source Voltage (Vgs) | 20V | |
| Height | 4.01mm | |
| Length | 4.77mm | |
| Width | 2.41mm | |
| REACH SVHC | No SVHC | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
Package-Type: TO-92
Transistor Type: P Channel
Max Gate to Source Voltage Should Be: ±20V
Max Continues Drain Current is: –250mA
Max Power Dissipation is: 8300mW
Max Voltage Applied From Drain to Source: –45V
Max Storage & Operating temperature Should Be: -65 to +150 °C
Low-Voltage Operation
High-Speed Switching
Ease in Driving Switches
Low Offset (Error) Voltage
Easily Driven Without Buffer
Drivers: Relays, Solenoids, Lamps
Hammers, Displays, Memories
Transistors, etc.
Battery Operated Systems
Power Supply, Converter Circuits
Motor Control
Fast Switching Applications
Motor Control Applications
Out Driver of Microcontroller and Electronic Platforms
Various signal amplification
The BS250 can be utilized in a wide range of general-purpose and high-speed switching applications, and it can drive loads of up to -250mA, which is sufficient to drive a wide range of relays, LEDs, lamps, tiny motors, transistors, and other devices. It can also be utilized at the output to power electronic platforms such as the Arduino, Raspberry Pi, and others.
MOSFETs are wired in almost the same way as BJT transistors. MOSFETs, on the other hand, are a fundamentally different technology than BJT transistors since BJTs regulate current while MOS FETs control voltage.
The following are the safe operating instructions for the BS250 transistor. Because the maximum drain current is -250mA, do not drive loads more than -200mA. Because the maximum drain to source voltage is -45V, do not drive loads that are higher than 36V. The maximum gate to source voltage should be less than 20V. The device should not be kept or used at temperatures lower than -65 °C or more than +150 °C.
BS250 Package Dimensions
Diodes Incorporated delivers high-quality semiconductor products to the world’s leading companies in the consumer electronics, computing, communications, industrial, and automotive markets. They leverage their expanded product portfolio of discrete, analog, and mixed-signal products and leading-edge packaging technology to meet customers ' needs. Their broad range of application-specific solutions and solutions-focused sales, coupled with worldwide operations of 25 sites, including engineering, testing, manufacturing, and customer service, enables us to be a premier provider for high-volume, high-growth markets.
Download datasheets and manufacturer documentation for BS250P
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