All ProductsDiscrete Semiconductor ProductsTransistors - Bipolar (BJT) - Arrays, Pre-BiasedHD1A3M(0)-T1-AZ
Renesas Electronics America HD1A3M(0)-T1-AZ BJT Transistors Arrays2W 60V
HD1A3M(0)-T1-AZ
Power - Max: 2W, Voltage - Collector Emitter Breakdown (Max): 60V
RoHS Compliant
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Min.: 1 Mult.: 1
2038-363-HD1A3M(0)-T1-AZ
TO-243AA
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HD1A3M(0)-T1-AZ Tech Specifications
HD1A3M(0)-T1-AZ Tech Specifications
Renesas Electronics America HD1A3M(0)-T1-AZ technical specifications, attributes, parameters and parts with similar specifications to Renesas Electronics America HD1A3M(0)-T1-AZ.
| Product Attribute | Attribute Value | |
|---|---|---|
| Mounting Type | Surface Mount | |
| Package / Case | TO-243AA | |
| Current-Collector (Ic) (Max) | 1A | |
| Packaging | Tape & Reel (TR) | |
| Series | HD1 |
| Product Attribute | Attribute Value | |
|---|---|---|
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Power - Max | 2W | |
| Transistor Type | 1 NPN Pre-Biased, 1 NPN | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 1A 2V |
| Product Attribute | Attribute Value | |
|---|---|---|
| Current - Collector Cutoff (Max) | 100nA ICBO | |
| Voltage - Collector Emitter Breakdown (Max) | 60V | |
| Resistor - Base (R1) | 1k Ω | |
| Resistor - Emitter Base (R2) | 1k Ω |
HD1A3M(0)-T1-AZ Documents
HD1A3M(0)-T1-AZ Documents
Download datasheets and manufacturer documentation for HD1A3M(0)-T1-AZ
PCN Obsolescence/ EOL
Mult Dev EOL 15/Dec/2018
Datasheets
HD1 Series
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