Memory
168 Products Found Manufacturers: Taiwan Semiconductor
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Part Life Cycle Code
Reach Compliance Code
ECCN Code
HTS Code
Memory IC Type
Package Description
JESD-30 Code
Memory Density
Memory Width
Number of Terminals
Number of Words
Number of Words Code
Operating Temperature-Max
Organization
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| Part # | Manufacturer | Pricing | Quantity | Availability | Surface Mount | Number of Pins | Weight | Number of Terminals | Access Time-Max | Analog | Base Product Number | Capacitors series | Case - inch | Case - mm | Cleaning method | Clock Frequency-Max (fCLK) | Gross weight | Ihs Manufacturer | Kind of capacitor | Melting temperature | Mfr | Mounting | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Programmable | Rohs Code | Soldering temperature | Supply Voltage-Nom (Vsup) | Transport packaging size/quantity | Type of capacitor | Operating temperature | Packaging | Series | Tolerance | JESD-609 Code | Pbfree Code | Part Status | ECCN Code | Type | Terminal Finish | Additional Feature | HTS Code | Capacitance | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | JESD-30 Code | Qualification Status | Dielectric | Temperature Grade | Number of Ports | Operating Mode | Supply Current-Max | Organization | Output Characteristics | Seated Height-Max | Memory Width | Standby Current-Max | Memory Density | Screening Level | Design | Parallel/Serial | I/O Type | Memory IC Type | Serial Bus Type | Endurance | Write Cycle Time-Max (tWC) | Data Retention Time-Min | Write Protection | Standby Voltage-Min | Voltage - Supply (Max) | Voltage - Supply (Min) | Refresh Cycles | I2C Control Byte | Sequential Burst Length | Interleaved Burst Length | Access Mode | Operating voltage | Self Refresh | Diameter | Length | Width |
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| Catalyst Semiconductor | Min.: 1 Mult.: 1 | - | - | - | - | - | - | - | - | - | - | - | - | - | CATALYST SEMICONDUCTOR INC | - | - | - | - | - | - | - | - | - | - | , | - | - | - | Transferred | - | - | - | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | 8542.32.00.51 | - | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
| Catalyst Semiconductor | Min.: 1 Mult.: 1 | YES | - | - | 8 | - | - | - | - | - | - | - | - | - | CATALYST SEMICONDUCTOR INC | - | - | - | - | 4096 words | 4000 | 70 °C | - | PLASTIC/EPOXY | TSSOP | TSSOP, TSSOP8,.25 | TSSOP8,.25 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | - | - | No | - | - | - | - | - | - | - | - | e0 | - | - | EAR99 | - | Tin/Lead (Sn/Pb) | - | 8542.32.00.51 | - | DUAL | GULL WING | - | - | 0.635 mm | unknown | - | R-PDSO-G8 | Not Qualified | - | COMMERCIAL | - | - | 0.005 mA | 4KX8 | - | - | 8 | - | 32768 bit | - | - | SERIAL | - | EEPROM | SPI | 1000000 Write/Erase Cycles | - | 100 | HARDWARE/SOFTWARE | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
| Catalyst Semiconductor | Min.: 1 Mult.: 1 | - | - | - | - | - | - | - | - | - | - | - | - | - | CATALYST SEMICONDUCTOR INC | - | - | - | - | - | - | - | - | - | - | , | - | - | - | Transferred | - | - | - | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | 8542.32.00.51 | - | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
| SGS Semiconductor Ltd | Min.: 1 Mult.: 1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
| Pyramid Semiconductor Corporation | Min.: 1 Mult.: 1 | NO | - | - | 24 | 30 ns | - | - | - | - | - | - | - | - | PERFORMANCE SEMICONDUCTOR CORP | - | - | - | - | 16384 words | 16000 | 125 °C | -55 °C | CERAMIC | DIP | DIP, DIP24,.3 | DIP24,.3 | RECTANGULAR | IN-LINE | Obsolete | - | - | No | - | 5 V | - | - | - | - | - | - | e0 | - | - | 3A001.A.2.C | - | Tin/Lead (Sn/Pb) | - | 8542.32.00.41 | - | DUAL | THROUGH-HOLE | - | - | 2.54 mm | unknown | - | R-XDIP-T24 | Not Qualified | - | MILITARY | - | ASYNCHRONOUS | 0.12 mA | 16KX4 | 3-STATE | - | 4 | 0.02 A | 65536 bit | 38535Q/M;38534H;883B | - | PARALLEL | COMMON | STANDARD SRAM | - | - | - | - | - | 4.5 V | - | - | - | - | - | - | - | - | - | - | - | - | |||
| Jeju Semiconductor Corp | Min.: 1 Mult.: 1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Jeju Semiconductor Corp | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Bulk | * | - | - | - | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
| Catalyst Semiconductor | Min.: 1 Mult.: 1 | YES | - | - | 8 | - | - | - | - | - | - | - | - | - | CATALYST SEMICONDUCTOR INC | - | - | - | - | 4096 words | 4000 | 70 °C | - | PLASTIC/EPOXY | TSSOP | TSSOP, TSSOP8,.25 | TSSOP8,.25 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | - | - | No | - | - | - | - | - | - | - | - | e0 | - | - | EAR99 | - | Tin/Lead (Sn/Pb) | - | 8542.32.00.51 | - | DUAL | GULL WING | - | - | 0.635 mm | unknown | - | R-PDSO-G8 | Not Qualified | - | COMMERCIAL | - | - | 0.003 mA | 4KX8 | - | - | 8 | 9e-7 A | 32768 bit | - | - | SERIAL | - | EEPROM | I2C | 1000000 Write/Erase Cycles | - | 100 | HARDWARE | - | - | - | - | 1010DDDR | - | - | - | - | - | - | - | - | |||
| Catalyst Semiconductor | Min.: 1 Mult.: 1 | YES | - | - | 8 | - | - | - | - | - | - | - | - | - | CATALYST SEMICONDUCTOR INC | - | - | - | - | 256 words | 256 | 70 °C | - | PLASTIC/EPOXY | SOP | SOP, SOP8,.25 | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | Obsolete | - | - | No | - | 5 V | - | - | - | - | - | - | e0 | - | - | EAR99 | - | Tin/Lead (Sn/Pb) | - | 8542.32.00.51 | - | DUAL | GULL WING | - | - | 1.27 mm | unknown | - | R-PDSO-G8 | Not Qualified | - | COMMERCIAL | - | - | 0.003 mA | 256X8 | - | - | 8 | 0.000004 A | 2048 bit | - | - | SERIAL | - | EEPROM | I2C | 100000 Write/Erase Cycles | - | 100 | - | - | - | - | - | 1010DDDR | - | - | - | - | - | - | - | - | |||
| Uni-Tran Semiconductor Corp | Min.: 1 Mult.: 1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
| Pyramid Semiconductor Corporation | Min.: 1 Mult.: 1 | NO | - | - | 22 | 55 ns | - | - | - | - | - | - | - | - | PERFORMANCE SEMICONDUCTOR CORP | - | - | - | - | 16384 words | 16000 | 125 °C | -55 °C | CERAMIC | DIP | DIP, DIP22,.3 | DIP22,.3 | RECTANGULAR | IN-LINE | Obsolete | - | - | No | - | 5 V | - | - | - | - | - | - | e0 | - | - | 3A001.A.2.C | - | Tin/Lead (Sn/Pb) | - | 8542.32.00.41 | - | DUAL | THROUGH-HOLE | - | - | 2.54 mm | unknown | - | R-XDIP-T22 | Not Qualified | - | MILITARY | - | ASYNCHRONOUS | 0.12 mA | 16KX4 | 3-STATE | - | 4 | 0.0006 A | 65536 bit | - | - | PARALLEL | COMMON | STANDARD SRAM | - | - | - | - | - | 2 V | - | - | - | - | - | - | - | - | - | - | - | - | |||
| Alpha & Omega Semiconductor | Min.: 1 Mult.: 1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
| Catalyst Semiconductor | Min.: 1 Mult.: 1 | - | - | - | - | - | - | - | - | - | - | - | - | - | CATALYST SEMICONDUCTOR INC | - | - | - | - | - | - | - | - | - | - | , | - | - | - | Transferred | - | - | - | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | 8542.32.00.51 | - | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
| Catalyst Semiconductor | Min.: 1 Mult.: 1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
| Uni-Tran Semiconductor Corp | Min.: 1 Mult.: 1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
| Pyramid Semiconductor Corporation | Min.: 1 Mult.: 1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
| Elite Semiconductor Memory Technology Inc | Min.: 1 Mult.: 1 | YES | - | - | 54 | 6 ns | - | - | - | - | - | - | 143 MHz | - | ELITE SEMICONDUCTOR MICROELECTRONICS TECHNOLOGYINC | - | - | - | - | 4194304 words | 4000000 | 70 °C | - | PLASTIC/EPOXY | TSOP | - | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | - | - | No | - | 3.3 V | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | 8542.32.00.02 | - | DUAL | GULL WING | - | - | 0.8 mm | unknown | - | R-PDSO-G54 | Not Qualified | - | COMMERCIAL | - | - | 0.18 mA | 4MX16 | 3-STATE | - | 16 | 0.001 A | 67108864 bit | - | - | - | COMMON | SYNCHRONOUS DRAM | - | - | - | - | - | - | - | - | 4096 | - | 1,2,4,8,FP | 1,2,4,8 | - | - | - | - | - | - | |||
| Quality Semiconductor | Min.: 1 Mult.: 1 | - | - | - | - | - | - | QS7025A | - | - | - | - | - | - | - | - | - | Quality Semiconductor | - | - | - | - | - | - | - | - | - | - | - | - | - | Not Verified | - | - | - | - | - | - | Bulk | * | - | - | - | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
| Xi'an UniIC Semiconductors Co Ltd | Min.: 1 Mult.: 1 | YES | - | 0.1 kg | 96 | - | POS40 | - | KAF | 0805 | 2012 | Cleaning with alcohol-based solution | - | 110.00 | XIAN UNILC SEMICONDUCTORS CO LTD | MLCC | 183...240 °C | - | SMD | 268435456 words | 256000000 | 95 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA, | - | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Contact Manufacturer | - | - | - | 285...330 °C | 1.5 V | 42*28*18.5/100 | ceramic | -55...125°C | coil | - | ±10% | - | - | - | EAR99 | Soft lead-tin solder Sn/Pb with flux | - | AUTO/SELF REFRESH | 8542.32.00.36 | 1µF | BOTTOM | BALL | - | 1 | 0.8 mm | unknown | - | R-PBGA-B96 | - | X7R | INDUSTRIAL | 1 | SYNCHRONOUS | - | 256MX16 | - | 1.2 mm | 16 | - | 4294967296 bit | - | tube | - | - | DDR DRAM | - | - | - | - | - | - | 1.575 V | 1.425 V | - | - | - | - | MULTI BANK PAGE BURST | 10V | YES | 0.3 mm | 13.5 mm | 9 mm | |||
| Elite Semiconductor Memory Technology Inc | Min.: 1 Mult.: 1 | YES | - | - | 86 | - | - | - | - | - | - | - | - | - | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | - | - | - | - | 2097152 words | 2000000 | 70 °C | - | PLASTIC/EPOXY | TSOP2 | TSOP2, | - | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Active | - | - | - | - | 3.3 V | - | - | - | - | - | - | - | - | - | EAR99 | - | - | AUTO/SELF REFRESH | 8542.32.00.02 | - | DUAL | GULL WING | NOT SPECIFIED | 1 | 0.5 mm | unknown | NOT SPECIFIED | R-PDSO-G86 | - | - | COMMERCIAL | 1 | SYNCHRONOUS | - | 2MX32 | - | 1.2 mm | 32 | - | 67108864 bit | - | - | - | - | SYNCHRONOUS DRAM | - | - | - | - | - | - | 3.6 V | 3 V | - | - | - | - | FOUR BANK PAGE BURST | - | YES | - | 22.22 mm | 10.16 mm | |||
| Catalyst Semiconductor | Min.: 1 Mult.: 1 | YES | 8 | - | 8 | - | - | - | - | - | - | - | 0.1 MHz | - | CATALYST SEMICONDUCTOR INC | - | - | - | - | 2048 words | 2000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP, SOP8,.25 | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | - | Yes | - | 3 V | - | - | - | - | - | - | e3 | Yes | - | EAR99 | - | MATTE TIN | 1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION | 8542.32.00.51 | - | DUAL | GULL WING | - | 1 | 1.27 mm | unknown | - | R-PDSO-G8 | Not Qualified | - | INDUSTRIAL | - | SYNCHRONOUS | 0.003 mA | 2KX8 | - | 1.75 mm | 8 | 0.000001 A | 16384 bit | AEC-Q100 | - | SERIAL | - | EEPROM | I2C | 1000000 Write/Erase Cycles | 10 ms | 100 | HARDWARE | - | 6 V | 2.5 V | - | 1010MMMR | - | - | - | - | - | - | 4.9 mm | 3.9 mm | |||
