ON Semiconductor 2N3906TA Single BJT Transistors
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2N3906TA
1807-365-2N3906TA
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Transition Frequency: 250MHz
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6000In Stock
Min.: 1 Mult.: 1
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.305805 | $0.31 |
| 10+ | $0.288495 | $2.88 |
| 100+ | $0.27216 | $27.22 |
| 500+ | $0.256755 | $128.38 |
| 1000+ | $0.24222 | $242.22 |
Unit Price: $0.305805
Subtotal: $0.31
2N3906TA Tech Specifications
2N3906TA Tech Specifications
ON Semiconductor 2N3906TA technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2N3906TA.
| Product Attribute | Attribute Value | |
|---|---|---|
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) | |
| Factory Lead Time | 6 Weeks | |
| Contact Plating | Tin | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | |
| Number of Pins | 3Pins | |
| Weight | 240mg | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 40V | |
| Collector-Emitter Saturation Voltage | -250mV | |
| Frequency - Gain Bandwidth Product (GBP) | 250MHz | |
| Power Dissipation (Max) | 625mW | |
| Number of Elements | 1 Element | |
| hFEMin | 100 | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Box (TB) |
| Product Attribute | Attribute Value | |
|---|---|---|
| Published | 2007 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Voltage - Rated DC | -40V | |
| Terminal Position | BOTTOM | |
| Current Rating | -200mA | |
| Frequency | 250MHz | |
| Base Part Number | 2N3906 | |
| Element Configuration | Single | |
| Power Dissipation | 625mW | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | PNP | |
| Transistor Type | PNP |
| Product Attribute | Attribute Value | |
|---|---|---|
| Collector Emitter Voltage (VCEO) | 40V | |
| Max Collector Current | 200mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA 1V | |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 50mA | |
| Transition Frequency | 250MHz | |
| Max Breakdown Voltage | 40V | |
| Collector Base Voltage (VCBO) | -40V | |
| Emitter Base Voltage (VEBO) | -5V | |
| Turn On Time-Max (ton) | 70ns | |
| Height | 5.33mm | |
| Length | 5.2mm | |
| Width | 4.19mm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
2N3906TA Documents
2N3906TA Documents
Download datasheets and manufacturer documentation for 2N3906TA
2N3906TA Comparison
2N3906TA Comparison
The parts on the right have similar specifications to ON Semiconductor & 2N3906TA.
Mfr. Part #
Manufacturer
Package / Case
Moisture Sensitivity Level (MSL)
Packaging
Mounting Type
Transistor Type
DC Current Gain (hFE) (Min) @ Ic, Vce
Vce Saturation (Max) @ Ib, Ic
Operating Temperature
Availability
Price
Quantity
2N3906TA
ON Semiconductor
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
1 (Unlimited)
Tape & Box (TB)
Through Hole
PNP
100 @ 10mA 1V
400mV @ 5mA, 50mA
-55°C~150°C TJ
6000
$0.305805
2N3906BU
ON Semiconductor
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
1 (Unlimited)
Tape & Box (TB)
Through Hole
PNP
100 @ 10mA 1V
400mV @ 5mA, 50mA
-55°C~150°C TJ
348
$0.23868
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MMBT3906-7-F
Diodes Incorporated
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
1 (Unlimited)
Tape & Box (TB)
Through Hole
PNP
100 @ 10mA 1V
400mV @ 5mA, 50mA
-55°C~150°C TJ
30000
$0.19413
- 2N3906TAvsMMBT3906-7-Fvs2N3906BU
MMBT3906TT1G
ON Semiconductor
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
1 (Unlimited)
Tape & Box (TB)
Through Hole
PNP
100 @ 10mA 1V
400mV @ 5mA, 50mA
-55°C~150°C TJ
3000
$0.186075
- 2N3906TAvsMMBT3906TT1Gvs2N3906BU
MMBT3906WT1G
ON Semiconductor
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
1 (Unlimited)
Tape & Box (TB)
Through Hole
PNP
100 @ 10mA 1V
400mV @ 5mA, 50mA
-55°C~150°C TJ
21000
$0.208545
- 2N3906TAvsMMBT3906WT1Gvs2N3906BU