ON Semiconductor 4N26M
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12800In Stock
Min.: 1 Mult.: 1
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.758025 | $0.76 |
| 10+ | $0.715125 | $7.15 |
| 100+ | $0.67464 | $67.46 |
| 500+ | $0.63645 | $318.22 |
| 1000+ | $0.600435 | $600.44 |
Unit Price: $0.758025
Subtotal: $0.76
4N26M Tech Specifications
4N26M Tech Specifications
ON Semiconductor 4N26M technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 4N26M.
| Product Attribute | Attribute Value | |
|---|---|---|
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) | |
| Factory Lead Time | 7 Weeks | |
| Contact Plating | Tin | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | 6-DIP (0.300, 7.62mm) | |
| Number of Pins | 6Pins | |
| Supplier Device Package | 6-DIP | |
| Weight | 855mg | |
| Breakdown Voltage / V | 30V | |
| Collector-Emitter Saturation Voltage | 500mV | |
| Current Transfer Ratio-Min | 20% @ 10mA | |
| Power Dissipation (Max) | 250mW | |
| Number of Elements | 1 Element | |
| Operating Temperature | -40°C~100°C | |
| Packaging | Tube |
| Product Attribute | Attribute Value | |
|---|---|---|
| Published | 2008 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Max Operating Temperature | 100°C | |
| Min Operating Temperature | -40°C | |
| Base Part Number | 4N26 | |
| Voltage - Isolation | 4170Vrms | |
| Output Voltage | 30V | |
| Output Type | Transistor with Base | |
| Number of Channels | 1Channel | |
| Number of Circuits | 1Circuit | |
| Power Dissipation | 200mW | |
| Voltage - Forward (Vf) (Typ) | 1.18V | |
| Input Type | DC | |
| Forward Current | 60mA | |
| Max Output Voltage | 30V |
| Product Attribute | Attribute Value | |
|---|---|---|
| Rise Time | 2μs | |
| Forward Voltage | 1.5V | |
| Fall Time (Typ) | 2 μs | |
| Collector Emitter Voltage (VCEO) | 500mV | |
| Reverse Breakdown Voltage | 6V | |
| Max Input Current | 60mA | |
| Current - DC Forward (If) (Max) | 60mA | |
| Input Current | 10mA | |
| Turn On / Turn Off Time (Typ) | 2μs, 2μs | |
| Vce Saturation (Max) | 500mV | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
4N26M Documents
4N26M Documents
Download datasheets and manufacturer documentation for 4N26M
4N26M Comparison
4N26M Comparison
The parts on the right have similar specifications to ON Semiconductor & 4N26M.
Mfr. Part #
Manufacturer
Moisture Sensitivity Level (MSL)
Package / Case
Input Type
Output Type
Mounting Type
Voltage - Isolation
Operating Temperature
Packaging
Voltage - Forward (Vf) (Typ)
Availability
Price
Quantity
4N26M
ON Semiconductor
1 (Unlimited)
6-DIP (0.300, 7.62mm)
DC
Transistor with Base
Through Hole
4170Vrms
-40°C~100°C
Tube
1.18V
12800
$0.758025
4N25M
ON Semiconductor
1 (Unlimited)
6-DIP (0.300, 7.62mm)
DC
Transistor with Base
Through Hole
4170Vrms
-40°C~100°C
Tube
1.18V
13950
$0.83472
- 4N26Mvs4N25Mvs4N35M
4N35M
ON Semiconductor
1 (Unlimited)
6-DIP (0.300, 7.62mm)
DC
Transistor with Base
Through Hole
4170Vrms
-40°C~100°C
Tube
1.18V
13000
$0.89781
- 4N26Mvs4N35Mvs4N25M
CNY173M
ON Semiconductor
1 (Unlimited)
6-DIP (0.300, 7.62mm)
DC
Transistor with Base
Through Hole
4170Vrms
-40°C~100°C
Tube
1.18V
50400
$0.93591
- 4N26MvsCNY173Mvs4N25M
CNY173VM
ON Semiconductor
1 (Unlimited)
6-DIP (0.300, 7.62mm)
DC
Transistor with Base
Through Hole
4170Vrms
-40°C~100°C
Tube
1.18V
2341
$1.13385
- 4N26MvsCNY173VMvs4N25M