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All ProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleFDB33N25TM

ON Semiconductor FDB33N25TM Single MOSFETs Transistors 33A

FDB33N25TM
FDB33N25TM
Continuous Drain Current (ID): 33A
RoHS Compliant
Datasheet
1807-369-FDB33N25TM
ON Semiconductor
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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10086In Stock
Min.: 1 Mult.: 1
Quantity Unit Price Ext. Price
1+ $1.40026$1.4
10+ $1.321$13.21
100+ $1.24623$124.62
500+ $1.17569$587.84
1000+ $1.10914$1109.14
Unit Price:$1.40026
Subtotal: $1.4
Looking for a better price? Want a lower wholesale price? Please send an RFQ, and we will respond immediately.

FDB33N25TM Tech Specifications

ON Semiconductor FDB33N25TM technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor FDB33N25TM.

Product Attribute Attribute Value
Lifecycle StatusACTIVE (Last Updated: 19 hours ago)
Factory Lead Time7 Weeks
MountSurface Mount
Mounting TypeSurface Mount
Package / CaseTO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Contact PlatingTin
Number of Pins3Pins
Weight1.31247g
Transistor Element MaterialSILICON
Number of Elements1 Element
Power Dissipation (Max)235W Tc
Turn Off Delay Time75 ns
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25℃33A Tc
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
SeriesUniFET™
Published2004
Product Attribute Attribute Value
JESD-609 Codee3
Pbfree Codeyes
Part StatusActive
Moisture Sensitivity Level (MSL)1 (Unlimited)
Number of Terminations2Terminations
ECCN CodeEAR99
Resistance94MOhm
Additional FeatureFAST SWITCHING, AVALANCHE RATED
Terminal FormGULL WING
JESD-30 CodeR-PSSO-G2
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation235W
Case ConnectionDRAIN
Turn On Delay Time35 ns
FET TypeN-Channel
Transistor ApplicationSWITCHING
Rds On (Max) @ Id, Vgs94m Ω @ 16.5A, 10V
Product Attribute Attribute Value
Vgs(th) (Max) @ Id5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds2135pF @ 25V
Gate Charge (Qg) (Max) @ Vgs48nC @ 10V
Rise Time230ns
Vgs (Max)±30V
Fall Time (Typ)120 ns
Continuous Drain Current (ID)33A
Threshold Voltage3V
Gate to Source Voltage (Vgs)30V
Drain to Source Breakdown Voltage250V
Nominal Vgs3 V
Length10.67mm
Height4.83mm
Width11.33mm
REACH SVHCNo SVHC
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead FreeLead Free
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FDB33N25TM Documents

Download datasheets and manufacturer documentation for FDB33N25TM

PCN Design/Specification
Description Chg 01/Apr/2016
Logo 17/Aug/2017
PCN Assembly/Origin
Mult Dev Assem/Test Add 25/Jul/2019
FDYYY 20/Sep/2019
Datasheets
FDB33N25
FDB33N25TM-ON-Semiconductor-datasheet-81100200.pdf
FDB33N25TM-ON-Semiconductor-datasheet-137490855.pdf
FDB33N25TM-ON-Semiconductor-datasheet-86686884.pdf
FDB33N25TM-ON-Semiconductor-datasheet-130075989.pdf
FDB33N25TM-Fairchild-Semiconductor-datasheet-5378979.pdf
FDB33N25TM-ON-Semiconductor-datasheet-21379295.pdf
FDB33N25TM Documents
PCN Packaging
TO263 31/Aug/2016
Mult Devices 24/Oct/2017
Environmental Information
Material Declaration FDB33N25TM
ReachStatement
Fairchild-Semiconductor-FDB33N25TM.pdf

FDB33N25TM Comparison

The parts on the right have similar specifications to ON Semiconductor & FDB33N25TM.

  • Mfr. Part #

  • Manufacturer

  • Moisture Sensitivity Level (MSL)

  • Package / Case

  • Mounting Type

  • FET Type

  • Packaging

  • Rds On (Max) @ Id, Vgs

  • Operating Temperature

  • Availability

  • Price

  • Quantity

  • FDB33N25TM

  • ON Semiconductor

  • 1 (Unlimited)

  • TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

  • Surface Mount

  • N-Channel

  • Tape & Reel (TR)

  • 94m Ω @ 16.5A, 10V

  • -55°C~150°C TJ

  • 10086

  • $1.40026

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FDB33N25TM Comments

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Great experience with JAK.
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McMahon
reasonable price.
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Ian
The best platform for all the parts throughout the world.
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The product performance meets expectations, and the delivery time is not too long.
Rostow
Product quality is OK, but customer service can be better.

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