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All ProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleFDN338P

ON Semiconductor FDN338P Single MOSFETs Transistors 1.6A

FDN338P
FDN338P
Continuous Drain Current (ID): 1.6A
RoHS Compliant
Datasheet
1807-369-FDN338P
ON Semiconductor
TO-236-3, SC-59, SOT-23-3
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135000In Stock
Min.: 1 Mult.: 1
Quantity Unit Price Ext. Price
1+ $0.2445$0.24
10+ $0.23066$2.31
100+ $0.2176$21.76
500+ $0.20528$102.64
1000+ $0.19366$193.66
Unit Price:$0.2445
Subtotal: $0.24
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FDN338P Tech Specifications

ON Semiconductor FDN338P technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor FDN338P.

Product Attribute Attribute Value
Lifecycle StatusACTIVE (Last Updated: 6 days ago)
Factory Lead Time10 Weeks
Contact PlatingTin
MountSurface Mount
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Number of Pins3Pins
Weight30mg
Transistor Element MaterialSILICON
Current - Continuous Drain (Id) @ 25℃1.6A Ta
Drive Voltage (Max Rds On, Min Rds On)2.5V 4.5V
Number of Elements1 Element
Power Dissipation (Max)500mW Ta
Turn Off Delay Time16 ns
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
SeriesPowerTrench®
Published2001
JESD-609 Codee3
Product Attribute Attribute Value
Pbfree Codeyes
Part StatusActive
Moisture Sensitivity Level (MSL)1 (Unlimited)
Number of Terminations3Terminations
ECCN CodeEAR99
Resistance115mOhm
Additional FeatureLOGIC LEVEL COMPATIBLE
Voltage - Rated DC-20V
Terminal PositionDUAL
Terminal FormGULL WING
Current Rating-1.6A
Number of Channels1Channel
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation500mW
Turn On Delay Time10 ns
FET TypeP-Channel
Transistor ApplicationSWITCHING
Rds On (Max) @ Id, Vgs115m Ω @ 1.6A, 4.5V
Product Attribute Attribute Value
Vgs(th) (Max) @ Id1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds451pF @ 10V
Gate Charge (Qg) (Max) @ Vgs6.2nC @ 4.5V
Rise Time11ns
Drain to Source Voltage (Vdss)20V
Vgs (Max)±8V
Fall Time (Typ)11 ns
Continuous Drain Current (ID)1.6A
Threshold Voltage-800mV
Gate to Source Voltage (Vgs)8V
Drain to Source Breakdown Voltage-20V
Max Junction Temperature (Tj)150°C
Nominal Vgs-800 mV
Height1.22mm
Width3.05mm
REACH SVHCNo SVHC
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead FreeLead Free
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FDN338P Documents

Download datasheets and manufacturer documentation for FDN338P

PCN Assembly/Origin
Mult Dev Assembly/Test Add 8/Jul/2019
PCN Design/Specification
Mold Compound 08/April/2008
Logo 17/Aug/2017
Datasheets
FDN338P
FDN338P-ON-Semiconductor-datasheet-85487655.pdf
FDN338P-ON-Semiconductor-datasheet-86688456.pdf
FDN338P-ON-Semiconductor-datasheet-81454836.pdf
FDN338P-ON-Semiconductor-datasheet-137405268.pdf
FDN338P-Fairchild-datasheet-8427128.pdf
FDN338P-Fairchild-datasheet-56231.pdf
FDN338P-Fairchild-Semiconductor-datasheet-10734529.pdf
FDN338P-ON-Semiconductor-datasheet-23692249.pdf
FDN338P Documents
Environmental Information
Material Declaration FDN338P
PCN Packaging
Binary Year Code Marking 15/Jan/2014
Mult Devices 24/Oct/2017
ReachStatement
Fairchild-Semiconductor-FDN338P.pdf

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