ON Semiconductor NTD4965N-1G Single MOSFETs Transistors248 A
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360000In Stock
Min.: 1 Mult.: 1
NTD4965N-1G
1807-369-NTD4965N-1G
TO-251-3 Short Leads, IPak, TO-251AA
Pulsed Drain Current-Max (IDM): 248 A
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NTD4965N-1G Tech Specifications
NTD4965N-1G Tech Specifications
ON Semiconductor NTD4965N-1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTD4965N-1G.
| Product Attribute | Attribute Value | |
|---|---|---|
| Factory Lead Time | 1 Week | |
| Mounting Type | Through Hole | |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA | |
| Surface Mount | NO | |
| Number of Pins | 4Pins | |
| Supplier Device Package | I-PAK | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Package | Tube | |
| Base Product Number | NTD49 | |
| Current - Continuous Drain (Id) @ 25℃ | 13A (Ta), 68A (Tc) | |
| Mfr | onsemi | |
| Product Status | Obsolete | |
| Voltage - Gate Threshold (Vgs(th)) (Max) @ Id | 2.5V @ 250µA | |
| Package Description | IPAK-3 | |
| Package Style | IN-LINE | |
| Moisture Sensitivity Levels | 1 | |
| Package Body Material | PLASTIC/EPOXY | |
| Manufacturer Package Code | 369 | |
| Reflow Temperature-Max (s) | NOT SPECIFIED |
| Product Attribute | Attribute Value | |
|---|---|---|
| Operating Temperature-Max | 175 °C | |
| Manufacturer Part Number | NTD4965N-1G | |
| Package Shape | RECTANGULAR | |
| Manufacturer | ON Semiconductor | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | ON SEMICONDUCTOR | |
| Risk Rank | 5.38 | |
| Drain Current-Max (ID) | 13 A | |
| Series | - | |
| JESD-609 Code | e3 | |
| Pbfree Code | Yes | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin (Sn) | |
| Subcategory | FET General Purpose Power | |
| Technology | MOSFET (Metal Oxide) | |
| Terminal Position | SINGLE | |
| Terminal Form | THROUGH-HOLE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| JESD-30 Code | R-PSIP-T3 |
| Product Attribute | Attribute Value | |
|---|---|---|
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 4.7mOhm @ 30A, 10V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1710 pF @ 15 V | |
| Gate Charge (Qg) (Max) @ Vgs | 17.2 nC @ 4.5 V | |
| Drain to Source Voltage (Vdss) | 30 V | |
| Polarity/Channel Type | N-CHANNEL | |
| Drain Current-Max (Abs) (ID) | 68 A | |
| Drain-source On Resistance-Max | 0.01 Ω | |
| Pulsed Drain Current-Max (IDM) | 248 A | |
| DS Breakdown Voltage-Min | 30 V | |
| Avalanche Energy Rating (Eas) | 60 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 38.5 W | |
| FET Feature | - | |
| REACH SVHC | not_compliant |
NTD4965N-1G Documents
NTD4965N-1G Documents
Download datasheets and manufacturer documentation for NTD4965N-1G
NTD4965N-1G Comparison
NTD4965N-1G Comparison
The parts on the right have similar specifications to ON Semiconductor & NTD4965N-1G.
Mfr. Part #
Manufacturer
Package / Case
Mounting Type
Technology
FET Type
Rds On (Max) @ Id, Vgs
Availability
Price
Quantity
NTD4965N-1G
ON Semiconductor
TO-251-3 Short Leads, IPak, TO-251AA
Through Hole
MOSFET (Metal Oxide)
N-Channel
4.7mOhm @ 30A, 10V
360000
-
- -
NTD4965N-1G
Rochester Electronics, LLC
TO-251-3 Short Leads, IPak, TO-251AA
Through Hole
MOSFET (Metal Oxide)
N-Channel
4.7mOhm @ 30A, 10V
-
-
- -
- NTD4965N-1GvsNTD4965N-1GvsNTD4965N-35G
NTD4965N-35G
Rochester Electronics, LLC
TO-251-3 Short Leads, IPak, TO-251AA
Through Hole
MOSFET (Metal Oxide)
N-Channel
4.7mOhm @ 30A, 10V
-
-
- -
- NTD4965N-1GvsNTD4965N-35GvsNTD4965N-1G
XPH4R714MC,L1XHQ
Toshiba Semiconductor and Storage
TO-251-3 Short Leads, IPak, TO-251AA
Through Hole
MOSFET (Metal Oxide)
N-Channel
4.7mOhm @ 30A, 10V
-
-
- -
- NTD4965N-1GvsXPH4R714MC,L1XHQvsNTD4965N-1G