ON Semiconductor RB521S30T1G Single-Phase Diode Rectifier 200mA Schottky -55°C 125°C
RB521S30T1G
Average Rectified Current: 200mA, Forward Current: 200mA, Diode Type: Schottky, Min Operating Temperature: -55°C, Max Operating Temperature: 125°C
RoHS Compliant
Datasheet 1807-352-RB521S30T1G
SC-79, SOD-523
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60000In Stock
Min.: 1 Mult.: 1
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.10995 | $0.11 |
| 500+ | $0.08085 | $40.43 |
| 1000+ | $0.06737 | $67.37 |
| 2000+ | $0.06181 | $123.62 |
| 5000+ | $0.05776 | $288.8 |
| 10000+ | $0.05374 | $537.4 |
| 15000+ | $0.05197 | $779.55 |
| 50000+ | $0.0511 | $2555 |
Unit Price:$0.10995Subtotal: $0.11
RB521S30T1G Tech Specifications
RB521S30T1G Tech Specifications
ON Semiconductor RB521S30T1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor RB521S30T1G.
| Product Attribute | Attribute Value | |
|---|---|---|
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) | |
| Factory Lead Time | 12 Weeks | |
| Contact Plating | Tin | |
| Mounting Type | Surface Mount | |
| Package / Case | SC-79, SOD-523 | |
| Surface Mount | YES | |
| Number of Pins | 2Pins | |
| Diode Element Material | SILICON | |
| Number of Elements | 1 Element | |
| Packaging | Tape & Reel (TR) | |
| Published | 2005 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 2Terminations | |
| ECCN Code | EAR99 | |
| Max Operating Temperature | 125°C | |
| Min Operating Temperature | -55°C |
| Product Attribute | Attribute Value | |
|---|---|---|
| HTS Code | 8541.10.00.70 | |
| Voltage - Rated DC | 30V | |
| Terminal Position | DUAL | |
| Terminal Form | FLAT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Current Rating | 200mA | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Base Part Number | RB521S30 | |
| Pin Count | 2 | |
| Polarity | Standard | |
| Element Configuration | Single | |
| Speed | Small Signal =< 200mA (Io), Any Speed | |
| Diode Type | Schottky | |
| Current - Reverse Leakage @ Vr | 30μA @ 10V | |
| Power Dissipation | 200mW | |
| Output Current | 200mA | |
| Voltage - Forward (Vf) (Max) @ If | 500mV @ 200mA | |
| Forward Current | 200mA | |
| Max Reverse Leakage Current | 30μA |
| Product Attribute | Attribute Value | |
|---|---|---|
| Operating Temperature - Junction | -55°C~125°C | |
| Max Surge Current | 1A | |
| Current - Average Rectified (Io) | 200mA DC | |
| Forward Voltage | 500mV | |
| Max Reverse Voltage (DC) | 30V | |
| Average Rectified Current | 200mA | |
| Peak Reverse Current | 30μA | |
| Max Repetitive Reverse Voltage (Vrrm) | 30V | |
| Peak Non-Repetitive Surge Current | 1A | |
| Max Forward Surge Current (Ifsm) | 1A | |
| Height | 700μm | |
| Length | 1.3mm | |
| Width | 900μm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
RB521S30T1G Documents
RB521S30T1G Documents
Download datasheets and manufacturer documentation for RB521S30T1G
ReachStatement
ON-Semiconductor-company-79.pdf
PCN Packaging
Mult Dev Taping Chg 12/Sep/2019
Environmental Information
Material Declaration RB521S30T1G
RB521S30T1G Comparison
RB521S30T1G Comparison
The parts on the right have similar specifications to ON Semiconductor & RB521S30T1G.
Mfr. Part #
Manufacturer
Diode Type
Packaging
Moisture Sensitivity Level (MSL)
Package / Case
Mounting Type
Speed
Voltage - Forward (Vf) (Max) @ If
Operating Temperature - Junction
Current - Reverse Leakage @ Vr
Availability
Price
Quantity
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1 (Unlimited)
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30μA @ 10V
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30μA @ 10V
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