![Ultra-Low On-Resistance Rad Hard 200 V Transistor]()
Ultra-Low On-Resistance Rad Hard 200 V Transistor
News May 11, 2022
EPC announces the introduction of the EPC7007 radiation-hardened GaN FET. The EPC7007 has a total dose rating greater than 1 Mrad and SEE immunity for LET of 85 MeV/(mg/cm2). These devices are offered in a chip-scale package, the same as the commercial eGaN FET and IC family. Packaged versions will be available from EPC Space.