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All ArticlesLatest BlogLatest NewsLatest SolutionLatest SubjectDual SiC Power Module Brings Efficiency to Medical and Industrial ApplicationsBlog Sep 30, 2022 Mitsubishi Electric has recently released a new 400A, 1200V dual silicon carbide (SiC) power module with integrated anti-parallel SiC SBD, suitable for medical power supplies and general industrial applicationsThreshold Voltage Stability and Gate Oxide Screening ChallengesSolution Sep 30, 2022 A team at the Ohio State University has been studying various aspects of the SiC power MOSFET reliability, including threshold voltage instability and gate oxide reliability.Prospects and Challenges of SiC in the Energy MarketBlog Sep 17, 2022 High efficiency and chemically inert nature cemented value of Silicon Carbide in power electronics sphere, leading to boom in its utilization.GaN HEMTs: Some Device Characteristics and Application TradeoffsBlog Sep 17, 2022 Reviewing some of the key device characteristics and applications of the more widely available GaN HEMTs along with the tradeoffsEnabling High Power Density and Efficient Systems with GaNSolution Sep 17, 2022 While there is some overlap in the power levels that GaN and SiC serve, GaN has fundamental characteristics that make it a better fit for applications in which high power density is critical.GaN Epi Wafer Manufacturing for High-Voltage GaN DevicesSolution Jul 15, 2022 Gallium nitride has become the de facto material in third-generation semiconductors. However, making GaN wafers in the quality you need and the thermal resistance you desire are challenges that fabs are still trying to overcome.GaN Power HEMT > 650 V: A Parametric Analysis and Comparison to SiC MOSFETSolution Jul 1, 2022 This article focuses on the detailed parametric analysis and comparison between GaN Power HEMT > 650 V and SiC MOSFETs over the time.Computational Model for Analyzing Wide-Bandgap SemiconductorsBlog Jul 1, 2022 Understanding the mechanism of formation of the valence and conduction bands of a semiconductor is of vital importance under the potential technological implications for what concerns the production of new materials.Innoscience Starts European R&D Centre in GaN Valley of BeligiumNews Jul 1, 2022 Innoscience, a manufacturer of GaN devices started a new R&D centre in Leuven, Belgium and Dr. Jan onsk joined as Vice President of R&DMonolithic Integration of GaN Components Boosts Power Integrated CircuitsSolution May 11, 2022 This article analyzes the successful co-integration of high-performance Schottky barrier diodes and D-mode HEMTs on a p-GaN HEMT–based 200-V GaN-on-SOI smart power IC platform. New Space-saving Side-wettable FlanksNews May 11, 2022 Nexperia, the expert in essential semiconductors, has recently announced its latest product additions to a growing range of discrete devices which it provides in leadless DFN packages with side-wettable flanks (SWF).Dynamic Circuit Model of a SiC VJFETSolution Apr 28, 2022 SiC semiconductors perform considerably well on various parameters like high temperatures, frequency, voltage, and several others.12
