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All ArticlesLatest BlogLatest NewsLatest SolutionLatest SubjectThe Rise of Automotive-Grade SiC/GaN Power Devices in Electric VehiclesSolution Jan 13, 2025 The automotive fast recovery Silicon Carbide (SiC) and Gallium Nitride (GaN) power devices emerge as game-changing technologies.GaN HEMTs: Some Device Characteristics and Application TradeoffsBlog Sep 17, 2022 Reviewing some of the key device characteristics and applications of the more widely available GaN HEMTs along with the tradeoffsGaN Power HEMT > 650 V: A Parametric Analysis and Comparison to SiC MOSFETSolution Jul 1, 2022 This article focuses on the detailed parametric analysis and comparison between GaN Power HEMT > 650 V and SiC MOSFETs over the time.Computational Model for Analyzing Wide-Bandgap SemiconductorsBlog Jul 1, 2022 Understanding the mechanism of formation of the valence and conduction bands of a semiconductor is of vital importance under the potential technological implications for what concerns the production of new materials.Innoscience Starts European R&D Centre in GaN Valley of BeligiumNews Jul 1, 2022 Innoscience, a manufacturer of GaN devices started a new R&D centre in Leuven, Belgium and Dr. Jan onsk joined as Vice President of R&DMonolithic Integration of GaN Components Boosts Power Integrated CircuitsSolution May 11, 2022 This article analyzes the successful co-integration of high-performance Schottky barrier diodes and D-mode HEMTs on a p-GaN HEMT–based 200-V GaN-on-SOI smart power IC platform. 1
